US5854494A
Expired / Lapsed
US
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Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-06-30
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Granted: 1998-12-29
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Expires: 2014-06-30
Abstract
Abstract A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the dynamic circuit.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Yasuhiko Takemura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 12:10
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; G09; G09G; G09G3/00; G09G3/20; G09G3/34; G09G3/36; G09G3/3611; G09G3/3648; G09G3/3659; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/035; H10D86/201; H10D86/60; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; G02F1/1333; G02F1/1345; G02F1/13454; G02F1/13624; G02F1/136245; G09G2300/00; G09G2300/08; G09G2300/0809
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
87 words
An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided on said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions said source and drain semiconductor regions having a p-type conductivity and have a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions.
Claim 2
Dependent Claim
87 words
An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided on said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions said source and drain semiconductor regions having a p-type conductivity and have a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions.
Claim 3
Dependent Claim
25 words
The display device of claim 1 wherein said channel semiconductor region has a concentration of p-type impurity not higher than 10 17 atoms/cm 3 .
Claim 4
Dependent Claim
19 words
The display device of claim 1 wherein each of said at least one MOS transistors include a crystalline channel.
Claim 5
Dependent Claim
24 words
The display device of claim 1 further comprising a capacitor connected to said at least one MOS transistor in series at respective pixel electrodes.
Claim 6
Dependent Claim
129 words
An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a p-type conductivity and having a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions, and wherein said at least one MOS transistor further comprised a gate electrode provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an anodic oxide of said gate electrode provided on a surface of said gate electrode.
Claim 7
Dependent Claim
129 words
An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a p-type conductivity and having a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions, and wherein said at least one MOS transistor further comprised a gate electrode provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an anodic oxide of said gate electrode provided on a surface of said gate electrode.
Claim 8
Dependent Claim
134 words
An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a p-type conductivity and having a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions, and wherein said at least one MOS transistor further comprises a gate electrode comprising a metal provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an oxide of said metal of said gate electrode provided on a surface of said gate electrode.
Claim 9
Dependent Claim
134 words
An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a p-type conductivity and having a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions, and wherein said at least one MOS transistor further comprises a gate electrode comprising a metal provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an oxide of said metal of said gate electrode provided on a surface of said gate electrode.
Claim 10
Dependent Claim
83 words
An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided on said insulating surface, each of said pixel electrodes being provided with at least one field effect transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions.
Claim 11
Dependent Claim
83 words
An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided on said insulating surface, each of said pixel electrodes being provided with at least one field effect transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions.
Claim 12
Dependent Claim
27 words
A display device according to claim 7 wherein said channel semiconductor region has a concentration of a p-type impurity not higher than 10 17 atoms/cm 3 .
Claim 13
Dependent Claim
16 words
A display device according to claim 7 wherein said channel semiconductor layer comprises a crystalline silicon.
Claim 14
Dependent Claim
26 words
A display device according to claim 7 further comprising a capacitor connected to said at least one field effect transistor in series at respective pixel electrodes.
Claim 15
Dependent Claim
125 words
An electro-optical device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one field effect transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions, and wherein said at least one field effect transistor further comprises a gate electrode provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an anodic oxide of said gate electrode provided on a surface of said gate electrode.
Claim 16
Dependent Claim
125 words
An electro-optical device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one field effect transistor having only one conductivity type and comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions, and wherein said at least one field effect transistor further comprises a gate electrode provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an anodic oxide of said gate electrode provided on a surface of said gate electrode.
Claim 17
Dependent Claim
27 words
A display device according to claim 11 wherein said channel semiconductor region has a concentration of a p-type impurity not higher than 10 17 atoms/cm 3 .
Claim 18
Dependent Claim
16 words
A display device according to claim 11 wherein said channel semiconductor layer comprises a crystalline silicon.
Claim 19
Dependent Claim
26 words
A display device according to claim 11 further comprising a capacitor connected to said at least one field effect transistor in series at respective pixel electrodes.
Claim 20
Dependent Claim
18 words
A display device according to claim 11 wherein said gate electrode is located over said channel semiconductor region.
Claim 21
Dependent Claim
125 words
An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one field effect transistor comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions, and wherein said at least one field effect transistor further comprises a gate electrode comprising a metal provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an oxide of said metal of said gate electrode provided on a surface of said gate electrode.
Claim 22
Dependent Claim
125 words
An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided above said insulating surface, each of said pixel electrodes being provided with at least one field effect transistor comprising at least a channel semiconductor region and source and drain semiconductor regions, said source and drain semiconductor regions having a higher crystallinity than said channel semiconductor region, wherein said channel semiconductor region is thinner than said source and drain regions, and wherein said at least one field effect transistor further comprises a gate electrode comprising a metal provided adjacent to said channel semiconductor region with a gate insulating film therebetween, and an oxide of said metal of said gate electrode provided on a surface of said gate electrode.
Claim 23
Dependent Claim
27 words
A display device according to claim 16 wherein said channel semiconductor region has a concentration of a p-type impurity not higher than 10 17 atoms/cm 3 .
Claim 24
Dependent Claim
16 words
A display device according to claim 16 wherein said channel semiconductor layer comprises a crystalline silicon.
Claim 25
Dependent Claim
26 words
A display device according to claim 16 further comprising a capacitor connected to said at least one field effect transistor in series at respective pixel electrodes.
Claim 26
Dependent Claim
18 words
A display device according to claim 16 wherein said gate electrode is located over said channel semiconductor region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-12-28 | 2002-06-29 | 2002-12-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-12-28 | 2006-06-29 | 2006-12-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-12-28 | 2010-06-29 | 2010-12-29 | $7700.00 | Window Closed / Lapsed |