US5294555A
Expired / Lapsed
US
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Method of manufacturing thin film transistor and active matrix assembly including same
Assignee: Seiko Epson Corp
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Filing: 1992-01-30
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Granted: 1994-03-15
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Expires: 2012-01-30
Abstract
Abstract Thin film transistor including polycrystalline silicon or amorphous silicon thin film channel regions having a thickness of less than 2500 Å and active matrix assemblies including thin film transistors provide improved thin-type displays.
Inventors
- 👤 Tishihiko Mano
- 👤 Toshimoto Kodaira
- 👤 Hiroyuki Ohshima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:43
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6757; H10D86/481; H10D86/60; H10D86/80; G02F1/136213; G02F2202/00; G02F2202/10; G02F2202/104; H10D30/6746
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
92 words
A method of manufacturing a metal-oxide-semiconductor transistor including a source region, a drain region and a channel region between the source and drain regions formed from a thin film of non-monocrystalline silicon, a gate electrode opposing the channel region and an insulating film between the channel region and gate electrode, comprising the steps of: forming the channel region to be less than 2500 Å thick and forming the source and drain regions thicker than the channel region, at least at the junction of the channel region with the source and drain regions.
Claim 2
Independent Claim
92 words
A method of manufacturing a metal-oxide-semiconductor transistor including a source region, a drain region and a channel region between the source and drain regions formed from a thin film of non-monocrystalline silicon, a gate electrode opposing the channel region and an insulating film between the channel region and gate electrode, comprising the steps of: forming the channel region to be less than 2500 Å thick and forming the source and drain regions thicker than the channel region, at least at the junction of the channel region with the source and drain regions.
Claim 3
Dependent Claim
22 words
The method of claim 1, wherein the source and drain regions have a thickness throughout, greater than thickness of the channel region.
Claim 4
Dependent Claim
28 words
The method of claim 1, wherein the thin film of silicon at the channel region is first formed thicker than 2500 Å and is then decreased in thickness.
Claim 5
Dependent Claim
28 words
The method of claim 1, wherein the thin film of silicon at the channel region is first formed thicker than 2500 Å and is then decreased in thickness.
Claim 6
Independent Claim
148 words
A method of manufacturing a thin film MOS transistor which includes the steps of; depositing a thin film of silicon having a thickness greater than 2500 Å onto a substrate and forming into the shape of an island; removing from a central portion of the upper surface or said silicon film an amount of said film sufficient to create thin film channel region of no more than 2500 Å in thickness therein; disposing a gate insulating film across the silicon film; providing a gate electrode on said gate insulating film in said channel region; providing a source region and a drain region in the portions of said thin film having a thickness of greater than 2500 Å; depositing a second insulating film and forming contact openings to the source and drain regions; and providing means for connecting said gate electrode and source and drain regions to external circuitry.
Claim 7
Independent Claim
148 words
A method of manufacturing a thin film MOS transistor which includes the steps of; depositing a thin film of silicon having a thickness greater than 2500 Å onto a substrate and forming into the shape of an island; removing from a central portion of the upper surface or said silicon film an amount of said film sufficient to create thin film channel region of no more than 2500 Å in thickness therein; disposing a gate insulating film across the silicon film; providing a gate electrode on said gate insulating film in said channel region; providing a source region and a drain region in the portions of said thin film having a thickness of greater than 2500 Å; depositing a second insulating film and forming contact openings to the source and drain regions; and providing means for connecting said gate electrode and source and drain regions to external circuitry.
Claim 8
Dependent Claim
14 words
The method of claim 5, wherein the thin film of silicon comprises polycrystalline silicon.
Claim 9
Dependent Claim
12 words
The method claim 6, wherein the polycrystalline silicon comprises intrinsic polycrystalline silicon.
Claim 10
Dependent Claim
19 words
The method of claim 7, wherein the gate insulating film comprises a thermally oxidized film of intrinsic polycrystalline silicon.
Claim 11
Independent Claim
123 words
A method of manufacturing a metal-oxide-semiconductor transistor, comprising: disposing a thin film of silicon selected from the group consisting of polycrystalline silicon and amorphous silicon including a channel region of less than 2500 Å thickness on an insulating substrate; forming a source region and a drain region in said thin film silicon, spaced apart by said channel region, each source region and drain region having a thickness throughout greater than the thickness of said channel region; disposing an insulating film on the surface of said thin film and in contact with at least a portion of the surface of each of said source, drain and channel regions; and disposing a gate electrode on said insulating film and between said source and drain regions.
Claim 12
Independent Claim
123 words
A method of manufacturing a metal-oxide-semiconductor transistor, comprising: disposing a thin film of silicon selected from the group consisting of polycrystalline silicon and amorphous silicon including a channel region of less than 2500 Å thickness on an insulating substrate; forming a source region and a drain region in said thin film silicon, spaced apart by said channel region, each source region and drain region having a thickness throughout greater than the thickness of said channel region; disposing an insulating film on the surface of said thin film and in contact with at least a portion of the surface of each of said source, drain and channel regions; and disposing a gate electrode on said insulating film and between said source and drain regions.
Claim 13
Dependent Claim
14 words
The method of claim 9, wherein said insulating film is a silicon oxide film.
Claim 14
Dependent Claim
19 words
The method of claim 10, wherein the silicon oxide film is a thermally oxidized film of intrinsic polycrystalline silicon.
Claim 15
Dependent Claim
26 words
The method of claim 9, wherein said gate electrode is formed of a material selected from a group consisting of polycrystalline silicon, metal silicide and metal.
Claim 16
Dependent Claim
12 words
The method of claim 9, wherein the insulating substrate is quartz glass.
Claim 17
Dependent Claim
35 words
The method of claim 9, wherein the source and drain regions are formed by doping impurities into regions of the thin film of silicon having a thickness greater than the thickness of the channel region.
Claim 18
Independent Claim
118 words
A method of manufacturing a metal-oxide-semiconductor transistor, comprising: disposing a thin film of non-monocrystalline silicon including a channel region of less than 2500 Å thickness on an insulating substrate; forming a source region and a drain region in said thin film non-monocrystalline silicon, spaced apart by said channel region, each source region and drain region having a thickness throughout which is greater than the thickness of said channel region; disposing an insulating film disposed on the surface of said thin film non-monocrystalline silicon and in contact with at least a portion of the surface of each of said source, drain and channel regions; and disposing a gate on said insulating film and between said source and drain regions.
Claim 19
Independent Claim
118 words
A method of manufacturing a metal-oxide-semiconductor transistor, comprising: disposing a thin film of non-monocrystalline silicon including a channel region of less than 2500 Å thickness on an insulating substrate; forming a source region and a drain region in said thin film non-monocrystalline silicon, spaced apart by said channel region, each source region and drain region having a thickness throughout which is greater than the thickness of said channel region; disposing an insulating film disposed on the surface of said thin film non-monocrystalline silicon and in contact with at least a portion of the surface of each of said source, drain and channel regions; and disposing a gate on said insulating film and between said source and drain regions.
Claim 20
Dependent Claim
14 words
The method of claim 15, wherein said insulating film is a silicon oxide film.
Claim 21
Dependent Claim
19 words
The method of claim 16, wherein the silicon oxide film is a thermally oxidized film of intrinsic polycrystalline silicon.
Claim 22
Dependent Claim
26 words
The method of claim 15, wherein said gate electrode is formed of a material selected from a group consisting of polycrystalline silicon, metal silicide and metal.
Claim 23
Dependent Claim
12 words
The method of claim 15, wherein the insulating substrate is quartz glass.
Claim 24
Independent Claim
125 words
A method of manufacturing a metal-oxide-semiconductor transistor, comprising: forming a thin film of silicon selected from the group consisting of polycrystalline silicon and amorphous silicon and including a channel region of less than 2500 Å thickness; forming a source region and a drain region in said thin film of silicon, spaced apart by said channel region, each source region and drain region having a thickness throughout which is greater than the thickness of said channel region; disposing an insulating film on the surface of said thin film of silicon and in contact with at least a portion of the surface of each of said source, drain and channel regions; and disposing a gate electrode on said insulating film and between said source and drain regions.
Claim 25
Independent Claim
125 words
A method of manufacturing a metal-oxide-semiconductor transistor, comprising: forming a thin film of silicon selected from the group consisting of polycrystalline silicon and amorphous silicon and including a channel region of less than 2500 Å thickness; forming a source region and a drain region in said thin film of silicon, spaced apart by said channel region, each source region and drain region having a thickness throughout which is greater than the thickness of said channel region; disposing an insulating film on the surface of said thin film of silicon and in contact with at least a portion of the surface of each of said source, drain and channel regions; and disposing a gate electrode on said insulating film and between said source and drain regions.
Claim 26
Dependent Claim
14 words
The method of claim 20, wherein said insulating film is a silicon oxide film.
Claim 27
Dependent Claim
19 words
The method of claim 21, wherein the silicon oxide film is a thermally oxidized film of intrinsic polycrystalline silicon.
Claim 28
Dependent Claim
26 words
The method of claim 20, wherein said gate electrode is formed of a material selected from a group consisting of polycrystalline silicon, metal silicide and metal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-14 | 1997-09-13 | 1998-03-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-14 | 2001-09-13 | 2002-03-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-14 | 2005-09-13 | 2006-03-15 | $7700.00 | Window Closed / Lapsed |