US4317686A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing field-effect transistors by forming double insulative buried layers by ion-implantation
Assignee: National Research Development Corp UK
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Filing: 1980-06-27
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Granted: 1982-03-02
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Expires: 2000-06-27
Abstract
Abstract A method of making a field-effect transistor is described in which first and second insulating layers are formed in crystalline material by ion implantation and, if necessary, annealing, further crystalline material being grown, if necessary, after the first layer has been implanted. Source and drain regions are defined in the material between the first and second layers, a layer of protective oxide is formed and metallization to form contacts for a gate region and the source and drain regions is deposited. Field-effect transistors made by the method are described and circuits containing such transistors can be separated by etching down to the first layer or by regions of amorphous material.
Inventors
- 👤 Kranti V. Anand
- 👤 John B. Butcher
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:07
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P30/00; H10P30/20; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/021; H10W10/061; H10W10/10; H10W10/181; H10W10/20; Y; Y10; Y10S; Y10S148/00; Y10S148/077
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
199 words
A method for constructing a field-effect transistor comprising the steps of: (a) implanting ions in a body of crystalline semiconductor material to form a first relatively high ion-concentration layer buried in the semiconductor material adjacent to a surface of the body, the ions being of a type which is at least capable of making the first layer an insulating layer; (b) forming a layer of crystalline semiconductor material on the said surface resulting in a new surface for a portion of the body; (c) implanting further ions in the semiconductor material to form a second relatively high ion-concentration layer buried in the semiconductor material between the new surface and the first high ion-concentration layer, the further ions being of a type which is at least capable of making the second layer an insulating layer; (d) forming source and drain regions in the semiconductor material between the first and second high ion-concentration layers; (e) defining a gate region and a gate insulation region in the semiconductor material between the new surface and the second high ion-concentration layer and in the said second layer, respectively, and thereafter (f) forming both a protective layer for the transistor and metallisation for electrical connections.
Claim 2
Independent Claim
199 words
A method for constructing a field-effect transistor comprising the steps of: (a) implanting ions in a body of crystalline semiconductor material to form a first relatively high ion-concentration layer buried in the semiconductor material adjacent to a surface of the body, the ions being of a type which is at least capable of making the first layer an insulating layer; (b) forming a layer of crystalline semiconductor material on the said surface resulting in a new surface for a portion of the body; (c) implanting further ions in the semiconductor material to form a second relatively high ion-concentration layer buried in the semiconductor material between the new surface and the first high ion-concentration layer, the further ions being of a type which is at least capable of making the second layer an insulating layer; (d) forming source and drain regions in the semiconductor material between the first and second high ion-concentration layers; (e) defining a gate region and a gate insulation region in the semiconductor material between the new surface and the second high ion-concentration layer and in the said second layer, respectively, and thereafter (f) forming both a protective layer for the transistor and metallisation for electrical connections.
Claim 3
Dependent Claim
24 words
A method according to claim 1 wherein the ions implanted to form the first high ion-concentration layer form an amorphous insulating layer on implantation.
Claim 4
Dependent Claim
59 words
A method according to claim 1 wherein the ions implanted to form at least one of the first and second high ion-concentration layers are capable of forming an insulating compound with the semiconductor material, including the step of annealing the semiconductor material after implanting ions to form the said one layer, the said insulating compound being formed on annealing.
Claim 5
Dependent Claim
47 words
A method according to claim 1 wherein the ions implanted to form the first and second layers are capable of reacting with the semiconductor material to form insulation, including the step of annealing the semiconductor material after implanting ions so making the first and second layers insulating.
Claim 6
Dependent Claim
20 words
A method according to claim 1 wherein the ions implanted in step (c) form the second layer are oxygen ions.
Claim 7
Dependent Claim
26 words
A method according to claim 1 wherein the ions implanted to form the first layer are the same as those implanted to form the second layer.
Claim 8
Dependent Claim
41 words
A method according to claim 4 wherein the semiconductor is annealed twice, firstly, after implanting ions to form the first layer, but before ions are implanted to form the second layer and secondly after implanting ions to form the second layer.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-03-01 | 1985-08-31 | 1986-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-03-01 | 1989-08-31 | 1990-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-03-01 | 1993-08-31 | 1994-03-02 | $7700.00 | Window Closed / Lapsed |