Method of forming diodes by amorphous implantations and concurrent annealing, monocrystalline reconversion and oxide passivation in <100> N-type silicon

Claim 1

A method of making a silicon dioxide passivated PN junction by boron ion implantation on a <100> silicon crystal face that has a reverse current leakage as low as a silicon dioxide passivated diode made by boron ion implantation on a <111> silicon crystal face, said method comprising the steps of: implanting boron ions into a selected region of an N-type <100> monocrystalline surface of at least about 1 ohm-centimeter resistivity silicon in a predetermined dose that converts said selected region from N-type doping to a preselected P-type doping; irradiating said selected <100> surface region with electronically neutral atoms in a dosage sufficient to convert said selected <100> surface region from monocrystalline silicon amorphous silicon; and without intervening anneal in a neutral atmosphere, heating said silicon to at least about 900° C. for a predetermined time in a moist oxygen atmosphere to grow a silicon dioxide coating thereon to a preselected thickness of at least about 3,000 angstroms on said <100> surface and to concurrently anneal said region, whereby said amorphous silicon in said region is epitaxially reconverted to monocrystalline silicon, boron atoms are moved to substitutional crystal lattice sites in the silicon to form a P-type zone therein, and a low leakage silicon dioxide passivated PN junction is formed between said P-type zone and N-type contiguous portions of said silicon.

Claim 2

A method of making a silicon dioxide passivated PN junction by boron ion implantation on a <100> silicon crystal face that has a reverse current leakage as low as a silicon dioxide passivated diode made by boron ion implantation on a <111> silicon crystal face, said method comprising the steps of: implanting boron ions into a selected region of an N-type <100> monocrystalline surface of at least about 1 ohm-centimeter resistivity silicon in a predetermined dose that converts said selected region from N-type doping to a preselected P-type doping; irradiating said selected <100> surface region with electronically neutral atoms in a dosage sufficient to convert said selected <100> surface region from monocrystalline silicon amorphous silicon; and without intervening anneal in a neutral atmosphere, heating said silicon to at least about 900° C. for a predetermined time in a moist oxygen atmosphere to grow a silicon dioxide coating thereon to a preselected thickness of at least about 3,000 angstroms on said <100> surface and to concurrently anneal said region, whereby said amorphous silicon in said region is epitaxially reconverted to monocrystalline silicon, boron atoms are moved to substitutional crystal lattice sites in the silicon to form a P-type zone therein, and a low leakage silicon dioxide passivated PN junction is formed between said P-type zone and N-type contiguous portions of said silicon.

Claim 3

A method of making a silicon dioxide passivated PN junction by boron ion implantation on a <100> silicon crystal face that has a reverse current leakage as low as a silicon dioxide passivated diode made by boron ion implantation on a <111> silicon crystal face, said method comprising the steps of: implanting boron ions having an energy of at least about 50 keV into a selected region of an N-type <100> monocrystalline surface of at least about 1 ohm-centimeter resistivity silicon in a predetermined dose of at least about 3 × 10 15 atoms per square centimeter and which converts said selected region from N-type doping to a preselected P-type doping; irradiating said selected <100> surface region with electronically neutral atoms in a dose that is precisely double the boron ion dose and converts the same selected <100> surface region from monocrystalline silicon to amorphous silicon; and thereafter heating said silicon to at least about 900° C. in a moist oxygen atmosphere to grow a silicon dioxide coating thereon to a preselected thickness of at least about 5,000 angstroms on said <100> surface and to concurrently anneal said silicon, whereby said amorphous silicon is reconverted to monocrystalline silicon of the same crystal lattice structure as the remainder of said silicone, boron atoms are moved to substitutional crystal lattice sites in the silicon to form a P-type zone therein, and a low leakage silicon dioxide passivated PN junction is formed between said P-type zone and N-type contiguous portions of said silicon.

Claim 4

A method of making a silicon dioxide passivated PN junction by boron ion implantation on a <100> silicon crystal face that has a reverse current leakage as low as a silicon dioxide passivated diode made by boron ion implantation on a <111> silicon crystal face, said method comprising the steps of: implanting boron ions having an energy of at least about 50 keV into a selected region of an N-type <100> monocrystalline surface of at least about 1 ohm-centimeter resistivity silicon in a predetermined dose of at least about 3 × 10 15 atoms per square centimeter and which converts said selected region from N-type doping to a preselected P-type doping; irradiating said selected <100> surface region with electronically neutral atoms in a dose that is precisely double the boron ion dose and converts the same selected <100> surface region from monocrystalline silicon to amorphous silicon; and thereafter heating said silicon to at least about 900° C. in a moist oxygen atmosphere to grow a silicon dioxide coating thereon to a preselected thickness of at least about 5,000 angstroms on said <100> surface and to concurrently anneal said silicon, whereby said amorphous silicon is reconverted to monocrystalline silicon of the same crystal lattice structure as the remainder of said silicone, boron atoms are moved to substitutional crystal lattice sites in the silicon to form a P-type zone therein, and a low leakage silicon dioxide passivated PN junction is formed between said P-type zone and N-type contiguous portions of said silicon.

Claim 5

A method of making a silicon dioxide passivated PN junction by boron ion implantation of a <100> silicon crystal face that has a reverse current leakage as low as a silicon dioxide passivated diode made by boron ion implantation on a <111> silicon crystal face, said method comprising the steps of: irradiating a selected region on an N-type <100> monocrystalline silicon surface with BF 2 + ions having an average energy of at least about 50 keV in a dosage of at least about 3 × 10 15 ions per square centimeter to convert said selected surface region simultaneously from N-type doping to P-type doping and to convert said region from monocrystalline silicon to amorphous silicon; and without intervening anneal in a neutral atmosphere, heating said silicon to a temperature of at least about 900° C. in a moist oxygen atmosphere to grow silicon dioxide thereon to a preselected thickness of at least about 3,000 angstroms on said <100> silicon surface and to concurrently anneal said region, whereby said amorphous silicon in said region is epitaxially reconverted to monocrystalline silicon and implanted boron atoms move to substitutional crystal lattice sites, resulting in a P-type monocrystalline zone in said N-type wafer surface and a silicon dioxide passivated low leakage PN junction therebetween.

Claim 6

A method of making a silicon dioxide passivated PN junction by boron ion implantation of a <100> silicon crystal face that has a reverse current leakage as low as a silicon dioxide passivated diode made by boron ion implantation on a <111> silicon crystal face, said method comprising the steps of: irradiating a selected region on an N-type <100> monocrystalline silicon surface with BF 2 + ions having an average energy of at least about 50 keV in a dosage of at least about 3 × 10 15 ions per square centimeter to convert said selected surface region simultaneously from N-type doping to P-type doping and to convert said region from monocrystalline silicon to amorphous silicon; and without intervening anneal in a neutral atmosphere, heating said silicon to a temperature of at least about 900° C. in a moist oxygen atmosphere to grow silicon dioxide thereon to a preselected thickness of at least about 3,000 angstroms on said <100> silicon surface and to concurrently anneal said region, whereby said amorphous silicon in said region is epitaxially reconverted to monocrystalline silicon and implanted boron atoms move to substitutional crystal lattice sites, resulting in a P-type monocrystalline zone in said N-type wafer surface and a silicon dioxide passivated low leakage PN junction therebetween.

Claim 7

A method of making silicon dioxide passivated PN junctions by boron ion implantation of a <100> silicon crystal face that has a reverse current leakage as low as oxide passivated diodes made by boron ion implantation on a <111> silicon crystal face, said method comprising the steps of: irradiating selected regions on an N-type <100> surface of a monocrystalline silicon wafer with BF 2 + ions having an average energy of at least about 50 keV in a dosage of at least about 2 × 10 15 ions per square centimeter at a dose rate of at least 1 microampere per square centimeter to simultaneously convert said selected surface regions to amorphous silicon and to P-type doping prominence; and heating said wafer to a temperature of about 1,000-1,200° C. for about 1-5 hours in a moist oxygen atmosphere to grow silicon dioxide thereon to a preselected thickness of about 3,000-5,000 angstroms on said <100> wafer surface and to concurrently anneal said wafer, during which said amorphous silicon is epitaxially reconverted to monocrystalline silicon and boron atoms therein to substitutional crystal lattice sites, resulting in P-type monocrystalline zones in said N-type wafer surface and low leakage silicon dioxide passivated PN junctions therebetween.

Claim 8

A method of making silicon dioxide passivated PN junctions by boron ion implantation of a <100> silicon crystal face that has a reverse current leakage as low as oxide passivated diodes made by boron ion implantation on a <111> silicon crystal face, said method comprising the steps of: irradiating selected regions on an N-type <100> surface of a monocrystalline silicon wafer with BF 2 + ions having an average energy of at least about 50 keV in a dosage of at least about 2 × 10 15 ions per square centimeter at a dose rate of at least 1 microampere per square centimeter to simultaneously convert said selected surface regions to amorphous silicon and to P-type doping prominence; and heating said wafer to a temperature of about 1,000-1,200° C. for about 1-5 hours in a moist oxygen atmosphere to grow silicon dioxide thereon to a preselected thickness of about 3,000-5,000 angstroms on said <100> wafer surface and to concurrently anneal said wafer, during which said amorphous silicon is epitaxially reconverted to monocrystalline silicon and boron atoms therein to substitutional crystal lattice sites, resulting in P-type monocrystalline zones in said N-type wafer surface and low leakage silicon dioxide passivated PN junctions therebetween.