US3589949A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductors and methods of doping semiconductors
Assignee: United Kingdom Atomic Energy Authority
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Filing: 1969-08-18
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Granted: 1971-06-29
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Expires: 1989-08-18
Abstract
Abstract A REGION OF SEMICONDUCTOR MATERIAL IS DOPED BY BOMBARDING THE REGION WITH DOPANT IONS, ADDITIONALLY BOMBARDING THE REGION WITH NON-DOPANT IONS, AND ANNEALING THE REGION. THE ADDITIONAL BOMBARDMENT, ESPECIALLY IF SUFFICIENT TO FORM THE REGION INTO AN AMORPHOUS CONDITION, WHICH IS RECRYSTALLISED BY THE ANNEAL, IMPROVES THE ABSORPTION OF THE DOPANT IONS INTO ACTIVE SUBSTITUTIONAL SITES IN THE LATTICE.
Inventors
- 👤 Richard Stuart Nelson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:59
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/20; C30B31/22; H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P30/21; H10P30/28
Claims Analysis
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-28 | 1974-12-28 | 1975-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-28 | 1978-12-28 | 1979-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-28 | 1982-12-28 | 1983-06-29 | $7700.00 | Window Closed / Lapsed |