Method for improving dielectric breakdown strength of insulating-glassy-material layer of a device including ion implantation therein

Abstract

Abstract It has been discovered for the practice of this disclosure that a particular ion radiation treatment of amorphous SiO 2 thin film, with a subsequent annealing procedure, improves the dielectric breakdown property of the film. The treated SiO 2 film is found to be substantially more dense than a comparable untreated SiO 2 film. It is theorized for the practice of this disclosure that the physical mechanism which produces the densification of the SiO 2 film may be responsible for the enhanced dielectric properties of the film. Such an improved film is especially useful as the gate insulator layer in an insulated-gate electrode field-effect transistor device, and as an insulating layer for electrically separating two metallic films in a thin film integrated circuit. Such SiO 2 thin films are useful in integrated circuit technology because the electrical insulation property thereof is considerably improved, e.g., in metal-oxide-semiconductor field effect devices in which the gate insulation is relatively thin, e.g. less than 500A, and in metallic magnetic-bubble devices in which a thin SiO 2 layer is used to separate the sense element from the conductive magnetic film.

Inventors

• 👤 John E. Baglin
• 👤 Thomas H. DiStefano
• 👤 King-Ning Tu

Bibliographic Details