US3862930A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation-hardened cmos devices and circuits
Assignee: United States Department of the Navy
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Filing: 1972-08-22
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Granted: 1975-01-28
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Expires: 1992-08-22
Abstract
Abstract A technique of reducing the radiation sensitive nature of both P-channel and N-channel components of a CMOS structure. The channel oxide in both components is grown as pure as possible during the manufacture with a special attempt to keep the alkali content low. After the manufacturing process is complete, the Pchannel component is masked while the entire N-channel component is subjected to an ion implantation which radiation hardens the entire CMOS device or circuit. This process provides a CMOS device which maintains a useable threshold level in the presence of and after it has been exposed to 106 rad of radiation.
Inventors
- 👤 Harold L Hughes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:02
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/858; H10D99/00; Y; Y10; Y10S; Y10S438/00; Y10S438/953
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
36 words
A METHOD OF RADIATION HARDENING A COMPLEMENTARYMETAL-OXIDE-SEMICONDUCTOR DEVICE HAVING AN N-CHANNEL AND A P-CHANNEL COMPONENT COMPRISING: SUBJECTING THE DIELECTRIC OF THE N-CHANNEL COMPONENT TO ION IMPLANATION TO PREVENT POSITIVE SPACE CHARGE BUILDUP UPON EXPOSURE TO RADIATION.
Claim 2
Independent Claim
36 words
A METHOD OF RADIATION HARDENING A COMPLEMENTARYMETAL-OXIDE-SEMICONDUCTOR DEVICE HAVING AN N-CHANNEL AND A P-CHANNEL COMPONENT COMPRISING: SUBJECTING THE DIELECTRIC OF THE N-CHANNEL COMPONENT TO ION IMPLANATION TO PREVENT POSITIVE SPACE CHARGE BUILDUP UPON EXPOSURE TO RADIATION.
Claim 3
Dependent Claim
15 words
The method as claimed in claim 1 wherein the ion implantation is aluminum ion implantation.
Claim 4
Dependent Claim
30 words
The method of claim 1 further including: masking the P-channel component before subjecting the N-channel component to ion implantation so that no ion implantation takes place in the P-channel component.
Claim 5
Dependent Claim
13 words
The method of claim 1 wherein the N-channel dielectric is a gate dielectric.
Claim 6
Dependent Claim
10 words
The method of claim 4 wherein the dielectric is silicon-dioxide.
References Cited (Backward Citations)
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US3515956A
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US3595716A
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US3635767A
Cited
US3660171A
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US3765961A
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US3759763A
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US3793088A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-01-27 | 1978-07-29 | 1979-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-01-27 | 1982-07-29 | 1983-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-01-27 | 1986-07-29 | 1987-01-28 | $7700.00 | Window Closed / Lapsed |