Method for producing semiconductor device utilizing ion implantation

Claim 1

A method according to claim 1, wherein said first temperature is above 600* C. but below the melting point of the semiconductor and said second temperature is in the range of 400* to 600* C.

Claim 2

A method for producing a planar type transistor comprising the steps of: a. forming a mask layer having an opening on a surface of a silicon body of a first conductivity type; b. bombarding an ion beam of a first active impurity onto the surface of the silicon body heated at a temperature between 600* C. and the melting point of silicon through said mask layer to form a base region in the surface of the silicon body; c. forming another mask layer having an opening smaller than said opening on said mask layer and said silicon body; d. bombarding an ion beam of a second active impurity onto the surface of said silicon body heated to a temperature of 400* to 600* C. to form an emitter region in said base region; e. removing the mask layers from the surface of the silicon body; f. forming a passivation film on the surface of the silicon body; g. forming openings in the passivation film to expose electrode portions of the silicon body; and h. connecting electrodes to the electrode portions of the silicon body.