Method of producing low threshold complementary insulated gate field effect devices
Abstract
Abstract IT IS ADVANTAGEOUS TO HAVE LOW GATE THRESHOLD VOLTAGE TRANSISTORS EXHIBITING HIGH STABILITY. IF THE SURFACE CONCENTRATION OF P-TYPE IMPURITIES OF AN N-TYPE INSULATED GATE FIELD EFFECTS TRANSISTOR (IGFET) CHANNEL BETWEEN THE N+ DOPED SOURCE AND DRAIN IS IN THE ORDER OF 6X10**15 ATOMS PER CU. CM. OR LESS, AND USING A POLYSILICON GATE ELECTRODE, THE GATE THRESHOLD VOLTAGES WILL BE ABOUT ONE VOLT. FURTHERMORE, IF THE COMPLEMENTARY TRANSISTORS ARE CAREFULLY CLEANED DURING PRODUCTION THEREOF AND A GETTERING STEP IS PROVIDED, THE RESULTANT C-IGFETS HAVE HIGH STABILITY. A METHOD INCLUDING THE MEASURED ETCHING AWAY OF THE SURFACE OF A P-TYPE DIFFUSED AREA IS DISCLOSED FOR PROVIDING A REGION OR TUB OF 6X10**15 P-IMPURITY CONCENTRATION IN AN N-TYPE SUBSTRATE. A METHOD IS ALSO DISCLOSED FOR PROVIDING A HIGHLY STABLE C-IGFET USING THE SO PRODUCED TUB INCLUDING CLEANING AND GETTERING.
Inventors
- 👤 R Wang
Bibliographic Details
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