US4437225A
Expired / Lapsed
US
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Method of forming SOS devices by selective laser treatment and reactive formation of isolation regions
Assignee: Toshiba Corp
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Filing: 1982-01-21
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Granted: 1984-03-20
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Expires: 2002-01-21
Abstract
Abstract Disclosed is a method of fabricating semi-conductor devices comprising the steps of: forming non-singlecrystalline semiconductor layer on a singlecrystalline insulation substrate, ion-implanting selectively material, which reacts with the semi-conductor layer to form insulating material, into the semiconductor layer; and applying an energy radiation or a heat treatment to the semiconductor layer, whereby the non-singlecrystalline semiconductor layer portion not implanted with said material is singlecrystallized with a seed of the singlecrystalline insulation substrate and at the same time the non-singlecrystalline semiconductor layer portion implanted with the material is rendered insulated.
Inventors
- 👤 Yoshihisa Mizutani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:52
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10W10/011; H10W10/012; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/091
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
96 words
A method of fabricating semiconductor devices comprising the steps of: forming a non-single crystalline semiconductor layer on a single crystalline insulation substrate; ion-implanting selectively material, which reacts with said semiconductor layer to form insulating material, into said semiconductor layer; and applying an energy radiation or a heat treatment to said semiconductor layer, whereby the non-single crystalline semiconductor layer portion not implanted with said material is single crystallized with a seed of said single crystalline insulation substrate and at the same time the non-single crystalline semiconductor layer portion implanted with said material is rendered an insulation material.
Claim 2
Independent Claim
96 words
A method of fabricating semiconductor devices comprising the steps of: forming a non-single crystalline semiconductor layer on a single crystalline insulation substrate; ion-implanting selectively material, which reacts with said semiconductor layer to form insulating material, into said semiconductor layer; and applying an energy radiation or a heat treatment to said semiconductor layer, whereby the non-single crystalline semiconductor layer portion not implanted with said material is single crystallized with a seed of said single crystalline insulation substrate and at the same time the non-single crystalline semiconductor layer portion implanted with said material is rendered an insulation material.
Claim 3
Dependent Claim
36 words
The method according to claim 1, in which the portion of said non-single crystalline semiconductor layer, into which ions are implanted, is thinner than the remaining portion of said semiconductor layer, before said ion-implantation is executed.
Claim 4
Dependent Claim
34 words
The method according to claim 1, in which a part of the surface of said ion-implanted region is covered with a film for controlling the depth of the ion-implantation, before said ion-implantation is executed.
Claim 5
Dependent Claim
29 words
The method according to claim 1, in which after the thickness of the non-single crystalline semiconductor layer into which ions are implanted is partially thinned, said ion-implantation is executed.
Claim 6
Independent Claim
44 words
The method according to any one of claims 1 to 4, in which, prior to the energy beam radiation or heat treatment, material for disturbing the crystallizability is ion-implanted into at least the portion to be single crystallized in said non-single crystalline semiconductor layer.
Claim 7
Dependent Claim
25 words
The method according to claim 1, in which the material reacting with said single crystalline semiconductor layer to form insulation material is oxygen or nitrogen.
Claim 8
Dependent Claim
23 words
The method according to claim 1, in which said non-single crystalline semiconductor layer is a polycrystalline semiconductor layer or an amorphous semiconductor layer.
Claim 9
Dependent Claim
29 words
The method according to claim 5, in which material for disturbing the crystallizability to improve the energy absorption efficiency is selected from a group of silicon, germanium, and argon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-20 | 1987-09-19 | 1988-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-20 | 1991-09-19 | 1992-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-20 | 1995-09-19 | 1996-03-20 | $7700.00 | Window Closed / Lapsed |