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US4339285A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for fabricating adjacent conducting and insulating regions in a film by laser irradiation

Assignee: Intersil Corp
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Filing: 1980-07-28
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Granted: 1982-07-13
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Expires: 2000-07-28
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Abstract

Abstract A method for fabricating adjacent electrically conducting and insulating regions in a silicon film is described. A substantially insulating layer of oxygenated, N or P doped, non-single crystalline silicon film is first formed. The film is then selectively laser irradiated so as to form an irradiated portion which is substantially conducting.

Inventors

  • 👤 Jacques I. Pankove

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 20:47
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/027; H10D30/0273; H10P; H10P34/00; H10P34/40; H10P34/42; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/022; Y10S148/117; Y10S148/122; Y10S438/00; Y10S438/934

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 47 words
A method for fabricating adjacent electrically conducting and insulating regions in a silicon film, comprising: forming a layer of oxygenated, doped, non-single crystalline silicon film, said film being substantially insulating; and selectively laser irradiating said film so as to form an irradiated portion which is substantially conducting.
Claim 2
Independent Claim 47 words
A method for fabricating adjacent electrically conducting and insulating regions in a silicon film, comprising: forming a layer of oxygenated, doped, non-single crystalline silicon film, said film being substantially insulating; and selectively laser irradiating said film so as to form an irradiated portion which is substantially conducting.
Claim 3
Dependent Claim 21 words
A method in accordance with claim 1, wherein said insulating portion has a resistivity of greater than about 10 8 ohm-centimeters.
Claim 4
Dependent Claim 20 words
A method in accordance with claim 1, wherein said conducting portion has a resistivity of less than about 100 ohm-centimeters.
Claim 5
Dependent Claim 15 words
A method in accordance with claim 1, wherein said film comprises oxygenated, doped, amorphous silicon.
Claim 6
Dependent Claim 15 words
A method in accordance with claim 1, wherein said film comprises oxygenated, doped, polycrystalline silicon.
Claim 7
Dependent Claim 14 words
A method in accordance with claim 1, wherein said film is about 0.1μ-10μ thick.
Claim 8
Dependent Claim 27 words
A method in accordance with claim 1, wherein the source of laser irradiation is a Nd-YAG laser operated at a level of about 0.45 joules/cm 2 .
Claim 9
Dependent Claim 30 words
A method in accordance with claim 1, wherein said selective laser irradiation comprises: disposing an apertured mask on the oxygenated, doped film; and laser irradiating through apertures in said mask.
Claim 10
Dependent Claim 12 words
A method in accordance with claim 8, wherein said mask is metal.
Claim 11
Dependent Claim 23 words
A method in accordance with claim 1, further comprising: providing a substrate having a surface; and forming said film on said substrate surface.
Claim 12
Dependent Claim 42 words
A method in accordance with claim 1, further comprising: forming spaced first and second conducting portions in the silicon film; and forming a layer of electrically conducting material on said silicon film, so as to electrically interconnect said first and second portions.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-07-12 1986-01-11 1986-07-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-07-12 1990-01-11 1990-07-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-07-12 1994-01-11 1994-07-13 $7700.00 Window Closed / Lapsed

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