US4243433A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Forming controlled inset regions by ion implantation and laser bombardment
Assignee: Individual
•
Filing: 1978-01-18
•
Granted: 1981-01-06
•
Expires: 1998-01-18
Abstract
Abstract A semiconductor integrated circuit structure in which the inset regions are ion implanted and laser annealed to maintain substantially the dimensions of the implantation and the method of forming inset implanted regions having controlled dimensions.
Inventors
- 👤 James F. Gibbons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 05:42
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/204; H10P30/22; H10P30/28; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S148/00; Y10S148/091; Y10S148/093
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
96 words
The method of forming an inset region of predetermined conductivity type having predetermined area and depth in a body of semiconductor material including the steps of forming an amorphous region of predetermined area and depth in said semiconductor body, forming by ion implantation of impurities a damaged region of area and depth less than said predetermined area and depth, and thereafter striking said damaged region with a laser beam having sufficient energy to anneal the damage produced by the implantation but not having enough energy to cause significant diffusion of impurities out of said damaged region.
Claim 2
Independent Claim
96 words
The method of forming an inset region of predetermined conductivity type having predetermined area and depth in a body of semiconductor material including the steps of forming an amorphous region of predetermined area and depth in said semiconductor body, forming by ion implantation of impurities a damaged region of area and depth less than said predetermined area and depth, and thereafter striking said damaged region with a laser beam having sufficient energy to anneal the damage produced by the implantation but not having enough energy to cause significant diffusion of impurities out of said damaged region.
Claim 3
Dependent Claim
10 words
A semiconductor structure formed by the method of claim 1.
Claim 4
Independent Claim
108 words
The method of forming a semiconductor structure having inset regions of predetermined conductivity type and predetermined area and depth comprising the steps of forming a mask having openings of said predetermined area on one surface of the device, forming by ion implantation through said openings an amorphous region of predetermined area and depth, implanting by ion implantation through said openings to a depth less than said depth impurities characterizing said conductivity type, and striking said region through said mask openings with a laser beam having sufficient energy to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said amorphous region.
Claim 5
Independent Claim
108 words
The method of forming a semiconductor structure having inset regions of predetermined conductivity type and predetermined area and depth comprising the steps of forming a mask having openings of said predetermined area on one surface of the device, forming by ion implantation through said openings an amorphous region of predetermined area and depth, implanting by ion implantation through said openings to a depth less than said depth impurities characterizing said conductivity type, and striking said region through said mask openings with a laser beam having sufficient energy to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said amorphous region.
Claim 6
Dependent Claim
10 words
A semiconductor structure formed by the method of claim 3.
Claim 7
Independent Claim
194 words
The method of forming a semiconductor structure having inset regions of predetermined conductivity type and predetermined area and depth comprising the steps of forming a mask having openings of said predetermined area on one surface of the device, forming by ion implantation through said openings an amorphous region of predetermined area and depth, implanting by ion implantation through said openings to a depth less than said depth impurities characterizing said conductivity type, striking said implanted region with a laser beam having sufficient energy to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said amorphous region, forming a second mask having second openings which are smaller than said area, said openings overlying said region, implanting by ion implantation through said second openings to a depth less than the depth of the ion implanted region impurities characterizing an opposite conductivity type to form a second inset region and striking said second inset region with a laser beam having sufficient energy to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said second implanted region into said first implanted region.
Claim 8
Independent Claim
194 words
The method of forming a semiconductor structure having inset regions of predetermined conductivity type and predetermined area and depth comprising the steps of forming a mask having openings of said predetermined area on one surface of the device, forming by ion implantation through said openings an amorphous region of predetermined area and depth, implanting by ion implantation through said openings to a depth less than said depth impurities characterizing said conductivity type, striking said implanted region with a laser beam having sufficient energy to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said amorphous region, forming a second mask having second openings which are smaller than said area, said openings overlying said region, implanting by ion implantation through said second openings to a depth less than the depth of the ion implanted region impurities characterizing an opposite conductivity type to form a second inset region and striking said second inset region with a laser beam having sufficient energy to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said second implanted region into said first implanted region.
Claim 9
Dependent Claim
10 words
A semiconductor structure formed by the method of claim 5.
Claim 10
Dependent Claim
118 words
In the method of forming a semiconductor structure having annealed inset regions of predetermined conductivity type and predetermined area and depth wherein a mask having openings of said predetermined area is formed on one surface of the device and ions are implanted through said openings to a predetermined depth to form said inset region containing impurities characterizing said conductivity type, the steps of leaving the mask intact and striking said region through the openings in said mask with a laser beam having sufficient energy to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said region into said structure whereby the ion implanted inset region maintains its area and depth.
Claim 11
Dependent Claim
118 words
In the method of forming a semiconductor structure having annealed inset regions of predetermined conductivity type and predetermined area and depth wherein a mask having openings of said predetermined area is formed on one surface of the device and ions are implanted through said openings to a predetermined depth to form said inset region containing impurities characterizing said conductivity type, the steps of leaving the mask intact and striking said region through the openings in said mask with a laser beam having sufficient energy to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said region into said structure whereby the ion implanted inset region maintains its area and depth.
Claim 12
Dependent Claim
154 words
In the method of forming a semiconductor structure having annealed inset regions of predetermined conductivity type and predetermined area and depth one inset into the other wherein sequential masks having openings of said predetermined areas are formed on one surface of the device and ions are sequentially implanted through said openings to predetermined depths to form one region inset into said structure and a second region inset into said one region, said regions containing impurities characterizing different conductivity types, the steps of striking each of said regions with a laser beam having sufficient energy to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said region as each implanted inset region is formed to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said one region into the substrate or from said second region into said first region.
Claim 13
Dependent Claim
154 words
In the method of forming a semiconductor structure having annealed inset regions of predetermined conductivity type and predetermined area and depth one inset into the other wherein sequential masks having openings of said predetermined areas are formed on one surface of the device and ions are sequentially implanted through said openings to predetermined depths to form one region inset into said structure and a second region inset into said one region, said regions containing impurities characterizing different conductivity types, the steps of striking each of said regions with a laser beam having sufficient energy to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said region as each implanted inset region is formed to anneal the damage produced by the implantation but not sufficient to cause significant diffusion of impurities from said one region into the substrate or from said second region into said first region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-01-06 | 1984-07-07 | 1985-01-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-01-06 | 1988-07-07 | 1989-01-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-01-06 | 1992-07-07 | 1993-01-06 | $7700.00 | Window Closed / Lapsed |