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US4154625A
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Annealing of uncapped compound semiconductor materials by pulsed energy deposition
Assignee: AT&T Inc
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Filing: 1977-11-16
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Granted: 1979-05-15
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Expires: 1997-11-16
Abstract
Abstract Damaged semiconductor materials are annealed using localized short term energy deposition. In a specific embodiment gallium arsenide damaged during ion implantation is annealed by exposure to short laser pulses.
Inventors
- 👤 Jene A. Golovchenko
- 👤 Thirumalai N. C. Venkatesan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 23:14
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/206; H10P30/28; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
65 words
A process comprising exposing at least a portion of the uncapped region of a damaged crystalline compound semiconductor material to short term localized energy deposition for a period less than 10 milliseconds thereby annealing the damaged crystal material to a substantially undamaged crystal state without substantial loss of compound semiconductor constituents occurring and providing electrical contact to at least one region of the semiconductor material.
Claim 2
Dependent Claim
65 words
A process comprising exposing at least a portion of the uncapped region of a damaged crystalline compound semiconductor material to short term localized energy deposition for a period less than 10 milliseconds thereby annealing the damaged crystal material to a substantially undamaged crystal state without substantial loss of compound semiconductor constituents occurring and providing electrical contact to at least one region of the semiconductor material.
Claim 3
Dependent Claim
21 words
The process of claim 1 wherein the damaged crystalline compound semiconductor material has a defect density greater than 10 17 /cc.
Claim 4
Dependent Claim
22 words
The process of claim 2 further comprising the step of ion implanting a dopant material into the compound semiconductor prior to annealing.
Claim 5
Dependent Claim
17 words
The process of claim 3 wherein the crystalline is damaged during ion implantation of the dopant material.
Claim 6
Dependent Claim
18 words
The process of claim 4 wherein the damaged material has a defect density greater than 10 19 /cc.
Claim 7
Dependent Claim
18 words
The process of claim 1 wherein the damaged material has a defect density greater than 10 19 /cc.
Claim 8
Dependent Claim
18 words
The process of claim 4 wherein the damaged material has a defect density greater than 10 20 /cc.
Claim 9
Dependent Claim
17 words
The process of claim 5 wherein the concentration of implanted material is greater than 10 15 /cc.
Claim 10
Dependent Claim
15 words
The process of claim 8 wherein the evaporative loss is less than 10 15 /cc.
Claim 11
Dependent Claim
11 words
The process of claim 4 wherein the energy is electromagnetic energy.
Claim 12
Dependent Claim
14 words
The process of claim 10 wherein the electromagnetic energy is within the optical range.
Claim 13
Dependent Claim
12 words
The process of claim 11 wherein the electromagnetic energy is laser radiation.
Claim 14
Dependent Claim
15 words
The process of claim 12 wherein the laser describes a pattern on the semiconductor material.
Claim 15
Dependent Claim
28 words
The process of claim 12 wherein the concentration of implanted material in the annealed semiconductor is greater than the solid solubility for such implanted material in the semiconductor.
Claim 16
Dependent Claim
19 words
The process of claim 12 wherein the sheet resistivity of the annealed semiconductor material is less than 350 ohms/□.
Claim 17
Dependent Claim
20 words
The process of claim 12 wherein a buried layer of implanted material is formed at depths greater than 300 angstroms.
Claim 18
Dependent Claim
18 words
The process of claim 12 wherein the laser is pulsed with a pulse width less than 10 milliseconds.
Claim 19
Dependent Claim
29 words
The process of claim 12 wherein the laser is a cw laser which scans the substrate thereby exposing a given region for a time period less than 10 milliseconds.
Claim 20
Dependent Claim
18 words
The process of claim 1 wherein the substrate consists of at least two regions of different conductivity type.
Claim 21
Dependent Claim
26 words
The process of claim 19 wherein an electrical contact is made to at least one of the at least two conductivity regions in the substrate material.
Claim 22
Dependent Claim
18 words
The process of claim 1 wherein the annealed material has a mobility greater than 10 cm 2 /Volt-sec.
Claim 23
Dependent Claim
18 words
The process of claim 21 wherein the annealed material has a mobility greater than 50 cm 2 /Volt-sec.
Claim 24
Dependent Claim
16 words
The process of claim 1 further comprising placing a metal contact upon the annealed semiconductor structure.
Claim 25
Dependent Claim
11 words
The process of claim 1 whereby a light-emitting diode is formed.
Claim 26
Dependent Claim
11 words
The process of claim 1 whereby a semiconductor laser is formed.
Claim 27
Dependent Claim
14 words
The process of claim 1 wherein the compound semiconductor has more than two constituents.
Claim 28
Dependent Claim
12 words
The process of claim 1 wherein the compound semiconductor is a binary.
Claim 29
Dependent Claim
12 words
The process of claim 4 wherein the compound semiconductor is gallium arsenide.
Claim 30
Dependent Claim
12 words
The process of claim 4 wherein the compound semiconductor is a binary.
Claim 31
Dependent Claim
10 words
The process of claim 28 wherein the dopant is tellurium.
Claim 32
Dependent Claim
19 words
The process of claim 17 wherein the laser is pulsed with a pulse width less than 1 nanoseconds. pg,20
Claim 33
Dependent Claim
11 words
The process of claim 1 wherein a solar cell is formed.
Claim 34
Dependent Claim
16 words
The process of claim 1 wherein the damaged crystalline compound semiconductor material is an amorphous material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-05-14 | 1982-11-13 | 1983-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-05-14 | 1986-11-13 | 1987-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-05-14 | 1990-11-13 | 1991-05-15 | $7700.00 | Window Closed / Lapsed |