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US4070205A
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US
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Aluminum arsenide eutectic gallium arsenide solar cell
Assignee: United States Department of the Air Force
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Filing: 1976-12-08
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Granted: 1978-01-24
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Expires: 1996-12-08
Abstract
Abstract An improved gallium arsenide solar cell is provided by forming a P+ layer on top of a wafer of plural vertical PN junction eutectic gallium arsenide crystal by liquid phase epitaxial growth of P doped GaAs followed by liquid phase epitaxial growth at Al x AsGa l-x on the surface of the vertical PN junction substrate. The deposited GaAs layer with P dopant and the Al x AsGa l-x layer forms horizontal P-N junctions with the N-type vertical regions. An N+ region is formed on the solar cell backside by ion implantation of an N dopant followed by a pulse electron beam current of the implanted region.
Inventors
- 👤 William P. Rahilly
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 00:26
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/127; H10F71/1272; H10F19/00; H10F19/10; H10F77/00; H10F77/10; H10F77/14; H10F77/148; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S148/00; Y10S148/046; Y10S148/084; Y10S438/00; Y10S438/929; Y10S438/965
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
138 words
A solar cell comprising: a. a wafer formed of a crystal of eutectic gallium arsenide having a plurality of alternating P and N doped regions forming a plurality of vertical PN junctions between a top and a bottom surface thereof; b. a first liquid phase epitaxial growth region overlying the said upper surface providing a GaAS P+ region adjacent the said upper surface thereby forming substantially horizontal P + N junctions perpendicular to said vertical PN junctions; c. a second liquid phase epitaxial growth region providing an Al x AsGa 1-x P+ region overlying the said GaAs P+ region, and providing an operating surface; d. an N+ region formed by ion implantation into the said bottom surface; e. a metallization contact positioned on the said operating surface; and f. a metallization contact positioned on the said bottom surface.
Claim 2
Dependent Claim
138 words
A solar cell comprising: a. a wafer formed of a crystal of eutectic gallium arsenide having a plurality of alternating P and N doped regions forming a plurality of vertical PN junctions between a top and a bottom surface thereof; b. a first liquid phase epitaxial growth region overlying the said upper surface providing a GaAS P+ region adjacent the said upper surface thereby forming substantially horizontal P + N junctions perpendicular to said vertical PN junctions; c. a second liquid phase epitaxial growth region providing an Al x AsGa 1-x P+ region overlying the said GaAs P+ region, and providing an operating surface; d. an N+ region formed by ion implantation into the said bottom surface; e. a metallization contact positioned on the said operating surface; and f. a metallization contact positioned on the said bottom surface.
Claim 3
Independent Claim
139 words
The method of forming a solar cell on a wafer of eutectic gallium arsenide substrate having a plurality of vertical PN junctions formed between an upper surface and a lower surface comprising the steps of: a. growing by liquid phase epitaxial deposition a layer of GaAs doped with a P type impurity to provide a P+ layer on the said upper surface of the said substrate; b. growing by liquid phase epitaxial deposition of a P+ doped Al x AsGa 1-x layer on the said P doped GaAs layer; c. ion implanting an N type impurity on the said lower surface to provide a N+ region; d. annealing the said N+ region with a pulsed electron beam; e. metallizing a contact on the said Al x AsGa 1-x ; and f. metallizing a contact on the said N+ region.
Claim 4
Independent Claim
139 words
The method of forming a solar cell on a wafer of eutectic gallium arsenide substrate having a plurality of vertical PN junctions formed between an upper surface and a lower surface comprising the steps of: a. growing by liquid phase epitaxial deposition a layer of GaAs doped with a P type impurity to provide a P+ layer on the said upper surface of the said substrate; b. growing by liquid phase epitaxial deposition of a P+ doped Al x AsGa 1-x layer on the said P doped GaAs layer; c. ion implanting an N type impurity on the said lower surface to provide a N+ region; d. annealing the said N+ region with a pulsed electron beam; e. metallizing a contact on the said Al x AsGa 1-x ; and f. metallizing a contact on the said N+ region.
References Cited (Backward Citations)
US3675026A
Cited
US3969746A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-01-23 | 1981-07-25 | 1982-01-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-01-23 | 1985-07-25 | 1986-01-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-01-23 | 1989-07-25 | 1990-01-24 | $7700.00 | Window Closed / Lapsed |