Patent US3038202A successfully refreshed from Google Patents.
US3969746A
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US
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Vertical multijunction solar cell
Assignee: Texas Instruments Inc
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Filing: 1973-12-10
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Granted: 1976-07-13
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Expires: 1993-12-10
Abstract
Abstract Disclosed is a method of fabricating a vertical multi-junction cell and the solar cell produced thereby, utilizing an orientation dependent etch to selectively provide parallel grooves in monocrystalline silicon body, followed by the introduction of doping impurities of the opposite conductivity type from the silicon body to provide PN junctions. In some instances the grooves are filled with silicon of the same conductivity type as the silicon body.
Inventors
- 👤 Don Leslie Kendall
- 👤 Francois Antoine Padovani
- 👤 Kenneth Elwood Bean
- 👤 Walter Theodore Matzen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:12
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/14; H10F77/148; H10F10/00; H10F10/10; H10F10/14; H10F19/00; H10F19/10; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/088; Y10S148/115; Y10S438/00; Y10S438/965
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
98 words
A semiconductor device in a monocrystalline semiconductor body of one conductivity type; a. a plurality of spaced parallel semiconductor columns of one conductivity type, each having a thickness about 10 microns, extending out from said body; and separated by grooves having a depth of about 100 microns; b. a continuous semiconductor region of opposite conductivity type in said columns, adjacent the surfaces thereof and in said body between said columns to form a continuous PN junction; and c. a pattern of metal contacts on the top surface of said columns and on the opposite surface of said body.
Claim 2
Dependent Claim
98 words
A semiconductor device in a monocrystalline semiconductor body of one conductivity type; a. a plurality of spaced parallel semiconductor columns of one conductivity type, each having a thickness about 10 microns, extending out from said body; and separated by grooves having a depth of about 100 microns; b. a continuous semiconductor region of opposite conductivity type in said columns, adjacent the surfaces thereof and in said body between said columns to form a continuous PN junction; and c. a pattern of metal contacts on the top surface of said columns and on the opposite surface of said body.
Claim 3
Dependent Claim
26 words
The device as defined in claim 1, including a high conductivity semiconductor region of said one conductivity type in said substrate adjacent the opposite surface thereof.
Claim 4
Dependent Claim
14 words
The device defined in claim 1, wherein said body and said column are silicon.
Claim 5
Dependent Claim
20 words
The device as defined in claim 3, wherein the top surfaces of said columns are sharply pointed to minimize reflection.
Claim 6
Dependent Claim
17 words
The device of claim 1 wherein said PN junction is passivated at the surface of the semiconductor.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-07-13 | 1980-01-12 | 1980-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-07-13 | 1984-01-12 | 1984-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-07-13 | 1988-01-12 | 1988-07-13 | $7700.00 | Window Closed / Lapsed |