US3714474A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electron-voltaic effect device
Assignee: ECC CORP US
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Filing: 1970-10-07
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Granted: 1973-01-30
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Expires: 1990-10-07
Abstract
Abstract Disclosed is an electron-voltaic semiconductor power source comprising a semiconductor body with a PN junction terminating in a passivated channel on one surface of the device. A radioactive source with V less than the radiation damage threshold of the semiconductor is used to generate carriers within the semiconductor body and the entire device is shielded with a metal casing formed on the device surface which also serves as electrical contacts for the device.
Inventors
- 👤 F Hoff
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:22
CPC Classifications
G; G21; G21H; G21H1/00; G21H1/06; G21D; G21D7/00; Y; Y02; Y02E; Y02E30/00
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
149 words
A semiconductor device comprising: a. a body of semiconductor material of a first conductivity type and having opposed major faces; b. a trench formed in at least one major face surrounding a portion of the surface of said major face; c. a region of semiconductor material of opposite conductivity type adjacent the surface of said body on said at least one major face thereof and forming a PN junction within said body, said PN junction terminating at said trench, whereby the conductivity type of the surface portion surrounded by said trench is the same as that of said body and opposite that of the surface surrounding said trench, d. a beta-emitting source adjacent at least a portion of said body of semiconductor material; e. electrically insulating material substantially filling said trench; and f. an electrically conductive coating covering the entire surface of said body except said electrically insulating material.
Claim 2
Dependent Claim
149 words
A semiconductor device comprising: a. a body of semiconductor material of a first conductivity type and having opposed major faces; b. a trench formed in at least one major face surrounding a portion of the surface of said major face; c. a region of semiconductor material of opposite conductivity type adjacent the surface of said body on said at least one major face thereof and forming a PN junction within said body, said PN junction terminating at said trench, whereby the conductivity type of the surface portion surrounded by said trench is the same as that of said body and opposite that of the surface surrounding said trench, d. a beta-emitting source adjacent at least a portion of said body of semiconductor material; e. electrically insulating material substantially filling said trench; and f. an electrically conductive coating covering the entire surface of said body except said electrically insulating material.
Claim 3
Dependent Claim
23 words
The device defined in claim 1 wherein V of said beta-emitting source is less than the radiation damage threshold of said semiconductor material.
Claim 4
Dependent Claim
23 words
The device defined in claim 2 wherein said semiconductor material is silicon, said beta-emitting source is Ni63, and said coating is substantially nickel.
Claim 5
Dependent Claim
12 words
The device defined in claim 1 wherein said insulating material is glass.
Claim 6
Dependent Claim
25 words
The device defined in claim 1 wherein the surface portion surrounded by said trench is removed from the plane of the major face surrounding same.
Claim 7
Dependent Claim
39 words
The device defined in claim 5 and further including an insulating material adjacent said major face surrounding said trench, the surface of said insulating material being substantially coplanar with the surface portion of said device surrounded by said trench.
Claim 8
Dependent Claim
32 words
The device defined in claim 1 wherein trenches are formed on both opposed major surfaces of said body and said PN junction intersects the surface of said body only within said trenches.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-01-30 | 1976-07-31 | 1977-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-01-30 | 1980-07-31 | 1981-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-01-30 | 1984-07-31 | 1985-01-30 | $7700.00 | Window Closed / Lapsed |