US4214918A
Expired / Lapsed
US
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Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam
Assignee: Leland Stanford Junior University
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Filing: 1978-10-12
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Granted: 1980-07-29
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Expires: 1998-10-12
Abstract
Abstract Low resistance, doped polycrystalline semiconductor connection patterns are fabricated by scanning a doped polycrystalline layer with a laser beam thereby increasing the crystal grain size, reducing defects in the grains, increasing charge carrier mobility and as a result reducing material resistivity. Semiconductor devices having increased circuit density and speed are realized through use of laser annealed polycrystalline semiconductor resistors, contacts and interconnections.
Inventors
- 👤 Arnon Gat
- 👤 Levy Gerzberg
- 👤 James F. Gibbons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:43
CPC Classifications
H; H10; H10P; H10P95/00; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
60 words
The method of forming a low resistance circuit interconnection on a dielectric layer on a substrate comprising the steps of forming a polycrystalline semiconductor layer on said dielectric layer, doping said polycrystalline layer with a conductivity determining impurity, and applying a radiation beam to said doped polycrystalline layer thereby increasing the grain size and conductance of said doped polycrystalline layer.
Claim 2
Independent Claim
60 words
The method of forming a low resistance circuit interconnection on a dielectric layer on a substrate comprising the steps of forming a polycrystalline semiconductor layer on said dielectric layer, doping said polycrystalline layer with a conductivity determining impurity, and applying a radiation beam to said doped polycrystalline layer thereby increasing the grain size and conductance of said doped polycrystalline layer.
Claim 3
Dependent Claim
14 words
The method as defined by claim 1 wherein said radiation beam comprises a laser.
Claim 4
Dependent Claim
15 words
The method as defined by claim 1 wherein said radiation beam comprises an electron beam.
Claim 5
Dependent Claim
27 words
The method as defined by claim 1 wherein said substrate comprises single crystal semiconductor material and said polycrystalline semiconductor layer is formed by a low temperature process.
Claim 6
Dependent Claim
25 words
The method as defined by claim 1 wherein said semiconductor is silicon, said dielectric layer comprises silicon oxide, and said polycrystalline layer comprises polycrystalline silicon.
Claim 7
Dependent Claim
14 words
The method as defined by claim 1 wherein said dielectric layer comprises silicon nitride.
Claim 8
Dependent Claim
14 words
The method as defined by claim 1 wherein said dielectric layer comprises silicon oxide.
Claim 9
Dependent Claim
26 words
The method as defined by claim 1 wherein said step of applying a radiation beam includes scanning a continuous wave beam across said deposited polycrystalline layer.
Claim 10
Dependent Claim
26 words
The method as defined by claim 1 wherein said step of applying a radiation beam includes scanning a pulsed wave beam across said deposited polycrystalline layer.
Claim 11
Dependent Claim
26 words
The method as defined by claim 1 and including before the step of applying said radiation beam the further step of thermal annealing said polycrystalline layer.
Claim 12
Dependent Claim
28 words
The method as defined by claim 1 and further including the step of removing part of said doped polycrystalline layer to define an interconnect path and electrical contacts.
Claim 13
Dependent Claim
18 words
The method as defined by claim 5 wherein said polycrystalline silicon layer is formed by chemical vapor deposition.
Claim 14
Dependent Claim
16 words
The method as defined by claim 5 wherein said polycrystalline silicon layer is formed by sputtering.
Claim 15
Dependent Claim
26 words
The method as defined by claim 5 wherein said step of doping said polycrystalline material is performed by diffusion after formation of said polycrystalline silicon material.
Claim 16
Dependent Claim
21 words
The method as defined by claim 5 wherein said step of doping said polycrystalline semiconductor material is performed by ion implantation.
Claim 17
Dependent Claim
23 words
The method as defined by claim 12 wherein the step of doping said polycrystalline layer is performed simultaneously with said chemical vapor desposition.
References Cited (Backward Citations)
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US4087571A
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US4063967A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-07-29 | 1984-01-28 | 1984-07-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-07-29 | 1988-01-28 | 1988-07-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-07-29 | 1992-01-28 | 1992-07-29 | $7700.00 | Window Closed / Lapsed |