US4087571A
Expired / Lapsed
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Controlled temperature polycrystalline silicon nucleation
Assignee: Fairchild Semiconductor Corp
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Filing: 1975-06-24
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Granted: 1978-05-02
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Expires: 1995-06-24
Abstract
Abstract The diffusivity of an impurity in a layer of polycrystalline silicon is controlled by forming the polycrystalline silicon on a thin nucleating layer of polycrystalline silicon possessing a maximum {110} texture.
Inventors
- 👤 Theodore I. Kamins
- 👤 Juliana Manoliu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 09:12
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/416; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171; H10P32/30; H10P32/302; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/115; Y10S148/122; Y10S148/153
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
83 words
The method of forming a polycrystalline silicon layer upon a substrate which comprises: forming a nucleating layer of polycrystalline silicon on said substrate at a temperature in the range of about 750° C to 800° C such that said nucleating layer possesses a substantially maximum [110] texture; and forming a second polycrystalline silicon layer on said nucleating layer at a second, higher temperature suitable for the simultaneous formation of polycrystalline silicon on said nucleating layer and, epitaxially, single crystal silicon upon said substrate.
Claim 2
Independent Claim
83 words
The method of forming a polycrystalline silicon layer upon a substrate which comprises: forming a nucleating layer of polycrystalline silicon on said substrate at a temperature in the range of about 750° C to 800° C such that said nucleating layer possesses a substantially maximum [110] texture; and forming a second polycrystalline silicon layer on said nucleating layer at a second, higher temperature suitable for the simultaneous formation of polycrystalline silicon on said nucleating layer and, epitaxially, single crystal silicon upon said substrate.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said temperature at which said second polycrystalline layer is formed is above 1000° C.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said nucleating layer is formed to a thickness of about 0.3 to 1.0 microns.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-05-01 | 1981-10-31 | 1982-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-05-01 | 1985-10-31 | 1986-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-05-01 | 1989-10-31 | 1990-05-02 | $7700.00 | Window Closed / Lapsed |