US3734770A
Expired / Lapsed
US
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Nitrogen nucleation process for the chemical vapor deposition of polycrystalline silicon from sici4
Assignee: Motorola Solutions Inc
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Filing: 1970-12-14
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Granted: 1973-05-22
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Expires: 1990-12-14
Abstract
Abstract A PROCESS IS DISCLOSED HEREIN FOR THE USE OF NITROGEN IN A NUCLEATION PROCESS FOR THE CHEMICAL VAPOR DEPOSITION OF POLYCRYSTALLINE SILICON FROM SICL4. AFTER ESTABLISHING THE DESIRED FURNACE TEMPERATURE AT A SINGLE TEMPERATURE LYING WITHIN THE RANGE OF 900*C. TO 1200*C., THE SYSTEM IS PURGED WITH NITROGEN AND HYDROGEN. AFTER THE SYSTEM HAS BEEN PURGED, THE NITROGEN FLOW IS STOPPED AND THE SICL4 FLOW IS STARTED SIMULTANEOUSLY. THE OVERLAP OF NITROGEN AND SICL4 WITHIN THE SYSTEM CAUSES NUCLEATION FROM WHICH A VERY FINEGRAIN LAYER OF POLYCRYSTALLINE SILICON IS GROWN.
Inventors
- 👤 J Price
- 👤 W Roman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 11:04
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/30; C23C16/40; C23C16/401; C23C16/402; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/114; Y10S148/118; Y10S148/122
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-05-21 | 1976-11-20 | 1977-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-05-21 | 1980-11-20 | 1981-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-05-21 | 1984-11-20 | 1985-05-22 | $7700.00 | Window Closed / Lapsed |