Abstract A pulsed laser or flash lamp produces a short duration pulse of light for thermal processing of selected regions of a semiconductor device. The light pulse is directed towards the semiconductor device and irradiates selected surface regions of the device to be processed. Energy deposited by the light pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the light pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature and the remaining mass of the semiconductor device is not subjected to unnecessary or undesirable high temperature exposure.
A method for localized thermal processing of a selected surface region of a semiconductor comprising the steps of: (a) generating short duration, noncoherent pulsed light; (b) directing said short duration pulsed light at the selected surface region of the semiconductor, said short duration, noncoherent pulsed light interacting with the selected surface region; and (c) momentarily elevating temperature only in a vicinity of the selected region by impacting said short duration, noncoherent light pulse upon the selected surface region.
Claim 2
Independent Claim
78 words
A method for localized thermal processing of a selected surface region of a semiconductor comprising the steps of: (a) generating short duration, noncoherent pulsed light; (b) directing said short duration pulsed light at the selected surface region of the semiconductor, said short duration, noncoherent pulsed light interacting with the selected surface region; and (c) momentarily elevating temperature only in a vicinity of the selected region by impacting said short duration, noncoherent light pulse upon the selected surface region.
Claim 3
Dependent Claim
29 words
The method as claimed in claim 1 wherein the pulse duration of said short duration, noncoherent pulsed light is in the range of 10 -9 to 10 -1 second.
Claim 4
Dependent Claim
25 words
The method as claimed in claim 1 wherein the thermal processing occurs in the semiconductor from the surface to a depth of approximately 3 microns.
Claim 5
Dependent Claim
24 words
The method as claimed in claim 1 wherein the energy of said noncoherent pulsed light is in the range of 0.1 to 6 eV.
Claim 6
Dependent Claim
16 words
The method as claimed in claim 2 wherein said pulse duration is approximately 10 -3 second.