US6028333A — Electric device, matrix device, electro-optical d…

Claim 1

Independent Claim 89 words

An electric device having a plurality of units arranged in a matrix, each of said plurality of units comprising: at least one p-channel type transistor having an active layer including source and drain regions, and a channel region therebetween; and at least one capacitor, wherein said at least one p-channel type transistor and said at least one capacitor are connected with one another in series, wherein an off current from said p-channel type transistor is less than 10 -12 A when a voltage of said drain region is 1V.

Claim 2

Dependent Claim 89 words

An electric device having a plurality of units arranged in a matrix, each of said plurality of units comprising: at least one p-channel type transistor having an active layer including source and drain regions, and a channel region therebetween; and at least one capacitor, wherein said at least one p-channel type transistor and said at least one capacitor are connected with one another in series, wherein an off current from said p-channel type transistor is less than 10 -12 A when a voltage of said drain region is 1V.

Claim 3

Dependent Claim 15 words

A device according to claim 1 wherein said electric device is a liquid crystal device.

Claim 4

Dependent Claim 14 words

A device according to claim 1 wherein said p-channel-type transistor is a multi-gate transistor.

Claim 5

Dependent Claim 170 words

An active matrix display device comprising: a plurality of data lines; a plurality of gate lines; a plurality of pixel electrodes; a plurality of p-channel type transistors, each of said p-channel type transistors being connected with corresponding one of said pixel electrodes through one of source and drain regions of said each of said p-channel type transistors and connected with corresponding one of said data lines through the other one of the source and drain regions and connected with corresponding one of said gate lines through a gate of said each of said p-channel type transistors wherein a side edge of a channel region of each of said p-channel type transistors extends beyond a side edge of a gate electrode of said each of said p-channel type transistors; and an electro-optical modulating layer provided between each of said pixel electrodes and a transparent conductive film, wherein an off current from each of said p-channel type transistors is less than 10 -12 A when a voltage of said drain is 1V.

Claim 6

Dependent Claim 170 words

An active matrix display device comprising: a plurality of data lines; a plurality of gate lines; a plurality of pixel electrodes; a plurality of p-channel type transistors, each of said p-channel type transistors being connected with corresponding one of said pixel electrodes through one of source and drain regions of said each of said p-channel type transistors and connected with corresponding one of said data lines through the other one of the source and drain regions and connected with corresponding one of said gate lines through a gate of said each of said p-channel type transistors wherein a side edge of a channel region of each of said p-channel type transistors extends beyond a side edge of a gate electrode of said each of said p-channel type transistors; and an electro-optical modulating layer provided between each of said pixel electrodes and a transparent conductive film, wherein an off current from each of said p-channel type transistors is less than 10 -12 A when a voltage of said drain is 1V.

Claim 7

Dependent Claim 34 words

A device according to claim 4 wherein a region provided between the source and drain regions in said p-type transistor contains a p-type impurity at a concentration of 10 17 atoms/cm 3 or less.

Claim 8

Dependent Claim 20 words

A device according to claim 4 wherein a region provided between the source and drain regions comprises a semi-amorphous semiconductor.

Claim 9

Dependent Claim 15 words

A device according to claim 4 wherein said p-type transistor serves as a switching means.

Claim 10

Dependent Claim 17 words

A device according to claim 2 wherein each of said p-channel type transistors is a multi-gate transistor.

Claim 11

Dependent Claim 107 words

An electric device having a plurality of units arranged in a matrix and having a plurality of complementary transistor pairs provided around said plurality of units arranged in the matrix, each of said plurality of units comprising: at least one p-channel type transistor having an active layer including source and drain regions, and a channel region therebetween; and at least one capacitor, wherein said at least one p-channel type transistor and said at least one capacitor are connected with one another in series, wherein an off current from said p-channel type transistor is less than 10 -12 A when a voltage of said drain region is 1V.

Claim 12

Dependent Claim 107 words

An electric device having a plurality of units arranged in a matrix and having a plurality of complementary transistor pairs provided around said plurality of units arranged in the matrix, each of said plurality of units comprising: at least one p-channel type transistor having an active layer including source and drain regions, and a channel region therebetween; and at least one capacitor, wherein said at least one p-channel type transistor and said at least one capacitor are connected with one another in series, wherein an off current from said p-channel type transistor is less than 10 -12 A when a voltage of said drain region is 1V.

Claim 13

Dependent Claim 37 words

A device according to claim 9 wherein at least one of said complementary transistor pairs comprises a gate electrode and an oxide of a material of said gate electrode provided on a surface of said gate electrode.

Claim 14

Dependent Claim 63 words

A device according to claim 9 further comprising at least one n-channel type transistor wherein each of said at least one n-channel type transistor is connected with corresponding p-channel type transistor in series and one of source and drain of each of said at least one n-channel type transistor is connected with one of source and drain of the corresponding p-channel type transistor.

Claim 15

Dependent Claim 15 words

A device according to claim 9 wherein said p-channel type transistor is a multi-gate transistor.

Claim 16

Dependent Claim 73 words

An electric device having a plurality of thin film transistors arranged in a matrix form, each of said thin film transistors being p-channel type and comprising: a semiconductor film formed on an insulating surface; a gate insulating film adjacent to said semiconductor film; and a gate electrode adjacent to said gate insulating film, wherein an off current of one of said thin film transistors is 10 -12 A when a drain voltage 1V.

Claim 17

Dependent Claim 73 words

An electric device having a plurality of thin film transistors arranged in a matrix form, each of said thin film transistors being p-channel type and comprising: a semiconductor film formed on an insulating surface; a gate insulating film adjacent to said semiconductor film; and a gate electrode adjacent to said gate insulating film, wherein an off current of one of said thin film transistors is 10 -12 A when a drain voltage 1V.

Claim 18

Dependent Claim 17 words

A device according to claim 13 wherein each of said p-channel type transistors is a multi-gate transistor.

Claim 19

Dependent Claim 142 words

An electric device comprising: a plurality of pixel electrodes provided on a substrate; and a plurality of p-channel type transistors provided on said substrate, each of said p-channel type transistors being connected with corresponding one of said pixel electrodes at one of source and drain of said each of said p-channel type transistors; wherein a region provided between said source and said drain comprises a first layer comprising a semiconductor selected from the group consisting of a single crystalline semiconductor, a polycrystal semiconductor and a semi-amorphous semiconductor, and a second layer provided under said first layer and comprising an amorphous semiconductor of the same material as said first layer, and wherein a side edge of a channel region of each of said p-channel type transistors extends beyond a side edge of a gate electrode of said each of said p-channel type transistors.

Claim 20

Dependent Claim 142 words

An electric device comprising: a plurality of pixel electrodes provided on a substrate; and a plurality of p-channel type transistors provided on said substrate, each of said p-channel type transistors being connected with corresponding one of said pixel electrodes at one of source and drain of said each of said p-channel type transistors; wherein a region provided between said source and said drain comprises a first layer comprising a semiconductor selected from the group consisting of a single crystalline semiconductor, a polycrystal semiconductor and a semi-amorphous semiconductor, and a second layer provided under said first layer and comprising an amorphous semiconductor of the same material as said first layer, and wherein a side edge of a channel region of each of said p-channel type transistors extends beyond a side edge of a gate electrode of said each of said p-channel type transistors.

Claim 21

Dependent Claim 17 words

A device according to claim 15 wherein each of said p-channel type transistors is a multi-gate transistor.

Claim 22

Dependent Claim 149 words

An electric device comprising: a substrate; a buffer layer formed on said substrate; a plurality of pixel electrodes provided on said buffer layer, each of said pixel electrodes being provided with at least one pixel transistor; an electro-optical modulating layer located adjacent to said pixel electrodes; and a peripheral circuit formed on a peripheral portion of said substrate for driving said pixel transistor, wherein said at least one pixel transistor is at least one thin film transistor having only p-channel type and having an active layer including source and drain regions and a channel region therebetween, and wherein a side edge of said channel region of said at least one thin film transistor extends beyond a side edge of a gate electrode of said transistor, wherein an off current from said thin film transistor is less than 10 -12 A when a voltage of said drain region is 1V.

Claim 23

Dependent Claim 149 words

An electric device comprising: a substrate; a buffer layer formed on said substrate; a plurality of pixel electrodes provided on said buffer layer, each of said pixel electrodes being provided with at least one pixel transistor; an electro-optical modulating layer located adjacent to said pixel electrodes; and a peripheral circuit formed on a peripheral portion of said substrate for driving said pixel transistor, wherein said at least one pixel transistor is at least one thin film transistor having only p-channel type and having an active layer including source and drain regions and a channel region therebetween, and wherein a side edge of said channel region of said at least one thin film transistor extends beyond a side edge of a gate electrode of said transistor, wherein an off current from said thin film transistor is less than 10 -12 A when a voltage of said drain region is 1V.

Claim 24

Dependent Claim 16 words

A device according to claim 17 wherein said peripheral circuit comprises thin film type CMOS circuits.

Claim 25

Dependent Claim 24 words

A device according to claim 17 further comprising a capacitor connected to said p-channel type thin film transistor in series at respective pixel electrodes.

Claim 26

Dependent Claim 34 words

A device according to claim 17 wherein said p-channel type thin film transistor has a channel semiconductor layer in which a concentration of p-type impurity is not higher than 10 17 atoms/cm 3 .

Claim 27

Dependent Claim 22 words

A device according to claim 17 wherein said peripheral circuit includes an inventor circuit formed with a complementary thin film transistor pair.

Claim 28

Dependent Claim 18 words

A device according to claim 17 wherein said peripheral circuit comprises a transmission gate formed of complementary transistors.

Claim 29

Dependent Claim 14 words

A device according to claim 17 wherein said pixel transistor is a multi-gate transistor.

Claim 30

Dependent Claim 70 words

An electric device comprising: a substrate; a plurality of pixel electrodes provided over said substrate, each of said pixel electrodes being provided with at least two p-channel type thin film transistors connected in series; and an electro-optical modulating layer located adjacent to said substrate; wherein an off current of each of said two p-channel type thin film transistors is less than 10 -12 A when a drain voltage is 1V.

Claim 31

Dependent Claim 70 words

An electric device comprising: a substrate; a plurality of pixel electrodes provided over said substrate, each of said pixel electrodes being provided with at least two p-channel type thin film transistors connected in series; and an electro-optical modulating layer located adjacent to said substrate; wherein an off current of each of said two p-channel type thin film transistors is less than 10 -12 A when a drain voltage is 1V.

Claim 32

Dependent Claim 46 words

A device according to claim 24 wherein each of said two p-channel type thin film transistors has a gate electrode, and said gate electrode is offset from at least one of a source and a drain of each of said two p-channel type thin film transistors.

Claim 33

Dependent Claim 14 words

A device according to claim 24 wherein said pixel transistor is a multi-gate transistor.

Claim 34

Dependent Claim 97 words

An active matrix display device comprising: a substrate; a plurality of pixel electrodes provided over said substrate; an electro-optical modulating layer located adjacent to said pixel electrodes; and a plurality of thin film transistors formed over said substrate and electrically connected with said plurality of pixel electrodes, each of said thin film transistors including a channel region comprising silicon, wherein an off current from said thin film transistor is less than 10 -12 A when a drain voltage is 1V, and wherein said channel region comprises boron at a concentration less than 10 17 cm -3 .

Claim 35

Dependent Claim 97 words

An active matrix display device comprising: a substrate; a plurality of pixel electrodes provided over said substrate; an electro-optical modulating layer located adjacent to said pixel electrodes; and a plurality of thin film transistors formed over said substrate and electrically connected with said plurality of pixel electrodes, each of said thin film transistors including a channel region comprising silicon, wherein an off current from said thin film transistor is less than 10 -12 A when a drain voltage is 1V, and wherein said channel region comprises boron at a concentration less than 10 17 cm -3 .

Claim 36

Dependent Claim 16 words

A device according to claim 27 wherein said peripheral circuit comprises thin film type CMOS circuits.

Claim 37

Dependent Claim 23 words

A device according to claim 27 further comprising a capacitor connected to said p-channel type thin transistor in series at respective pixel electrodes.

Claim 38

Dependent Claim 14 words

A device according to claim 27 wherein said pixel transistor is a multi-gate transistor.

Claim 39

Dependent Claim 154 words

An active matrix display device comprising: a substrate; a plurality of pixel electrodes provided on said substrate, each of said pixel electrodes being provided with a switching element; an electro-optical modulating layer located adjacent to said pixel electrodes; and a peripheral circuit formed on a peripheral portion of said substrate for driving said pixel transistor, wherein said switching element comprises only at least two p-channel type thin film transistors being connected in series with respect to said pixel electrode, each of said thin film transistors having an active layer including source and drain regions, and a channel region therebetween, wherein an off current from each of said p-channel type thin film transistors is less than 10 -12 A when a voltage of said drain region is 1V, wherein said channel region of said two p-channel thin film transistors comprises and an amorphous silicon layer and a crystalline silicon layer on said amorphous silicon layer.

Claim 40

Dependent Claim 154 words

An active matrix display device comprising: a substrate; a plurality of pixel electrodes provided on said substrate, each of said pixel electrodes being provided with a switching element; an electro-optical modulating layer located adjacent to said pixel electrodes; and a peripheral circuit formed on a peripheral portion of said substrate for driving said pixel transistor, wherein said switching element comprises only at least two p-channel type thin film transistors being connected in series with respect to said pixel electrode, each of said thin film transistors having an active layer including source and drain regions, and a channel region therebetween, wherein an off current from each of said p-channel type thin film transistors is less than 10 -12 A when a voltage of said drain region is 1V, wherein said channel region of said two p-channel thin film transistors comprises and an amorphous silicon layer and a crystalline silicon layer on said amorphous silicon layer.

Claim 41

Dependent Claim 30 words

A device according to claim 31 wherein said at least two p-channel type thin film transistors are inserted in series with a data line and with the corresponding pixel electrode.

Claim 42

Dependent Claim 16 words

A device according to claim 31 wherein said peripheral circuit comprises thin film type CMOS circuits.

Claim 43

Dependent Claim 21 words

A device according to claim 31 further comprising a capacitor connected to said switching element in series at respective pixel electrodes.

Claim 44

Dependent Claim 109 words

An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided on said insulating surface, each of said pixel electrodes being provided with one or a plurality of MOS transistors which have only one conductivity type, each of said MOS transistors having at least a channel semiconductor region and source and drain semiconductor regions wherein a side edge of said channel semiconductor region extends beyond a side edge of a gate electrode, and said source and drain semiconductor regions having a p-type conductivity, wherein said channel semiconductor region comprises a laminar structure comprising an amorphous silicon layer and a crystalline silicon layer.

Claim 45

Dependent Claim 109 words

An electro-optical display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided on said insulating surface, each of said pixel electrodes being provided with one or a plurality of MOS transistors which have only one conductivity type, each of said MOS transistors having at least a channel semiconductor region and source and drain semiconductor regions wherein a side edge of said channel semiconductor region extends beyond a side edge of a gate electrode, and said source and drain semiconductor regions having a p-type conductivity, wherein said channel semiconductor region comprises a laminar structure comprising an amorphous silicon layer and a crystalline silicon layer.

Claim 46

Dependent Claim 22 words

A device according to claim 35 wherein said source and drain semiconductor regions have a higher crystallinity than said channel semiconductor region.

Claim 47

Dependent Claim 17 words

A device according to claim 35 wherein said channel semiconductor region has an N - type conductivity.

Claim 48

Dependent Claim 26 words

A device according to claim 35 wherein said channel semiconductor region and said source and drain semiconductor regions are formed within one semiconductor film comprising silicon.

Claim 49

Dependent Claim 16 words

A device according to claim 35 wherein each of said MOS transistors is a multi-gate transistor.

Claim 50

Dependent Claim 119 words

An active matrix display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided on said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel region and source and drain regions said source and drain regions having a p-type conductivity, wherein said channel region is thinner than said source and drain regions, wherein an off current from said MOS transistors is less than 10 -12 A when a voltage of said drain region is 1V, wherein said channel region of MOS transistor comprises an amorphous silicon layer and a crystalline silicon layer on said amorphous silicon layer.

Claim 51

Dependent Claim 119 words

An active matrix display device comprising: a substrate having an insulating surface; and a plurality of pixel electrodes provided on said insulating surface, each of said pixel electrodes being provided with at least one MOS transistor having only one conductivity type and comprising at least a channel region and source and drain regions said source and drain regions having a p-type conductivity, wherein said channel region is thinner than said source and drain regions, wherein an off current from said MOS transistors is less than 10 -12 A when a voltage of said drain region is 1V, wherein said channel region of MOS transistor comprises an amorphous silicon layer and a crystalline silicon layer on said amorphous silicon layer.

Claim 52

Dependent Claim 16 words

A device according to claim 40 wherein said channel region has a N - type conductivity.

Claim 53

Dependent Claim 21 words

A device according to claim 40 further comprising another pMOS transistor connected to said at least one MOS transistor in series.

Claim 54

Dependent Claim 24 words

A device according to claim 40 wherein said channel region and said source and drain regions are formed within one semiconductor film comprising silicon.

Claim 55

Dependent Claim 14 words

A device according to claim 40 wherein said MOS transistor is a multi-gate transistor.

Claim 56

Dependent Claim 89 words

An active matrix display device comprising: a plurality of p-channel transistors formed in a matrix on an insulating surface, each of said p-channel transistors having an active layer including source and drain regions, and a channel region therebetween, wherein an off current from each of said p-channel transistors is less than 10 -12 A wherein a voltage of said drain region is 1V, wherein said channel region of each of said thin film transistors comprises an amorphous silicon layer and a crystalline silicon layer on said amorphous silicon layer.

Claim 57

Dependent Claim 89 words

An active matrix display device comprising: a plurality of p-channel transistors formed in a matrix on an insulating surface, each of said p-channel transistors having an active layer including source and drain regions, and a channel region therebetween, wherein an off current from each of said p-channel transistors is less than 10 -12 A wherein a voltage of said drain region is 1V, wherein said channel region of each of said thin film transistors comprises an amorphous silicon layer and a crystalline silicon layer on said amorphous silicon layer.

Claim 58

Dependent Claim 16 words

A device according to claim 45 wherein each of said p-channel transistors is a multi-gate transistor.

Claim 59

Dependent Claim 134 words

An active matrix display device comprising: a substrate; a plurality of pixel electrodes provided over said substrate; a plurality of thin film transistors formed over said substrate and electrically connected with said plurality of pixel electrodes, each of said thin film transistors including: a silicon nitride film formed on the substrate, a silicon oxide film formed on the substrate, a silicon film formed on the silicon oxide film, said silicon film including source and drain regions, and a channel region interposed therebetween, a gate electrode formed adjacent to the channel region with a gate insulating therebetween, wherein an off current from said thin film transistor is less than 10 -12 A wherein a drain voltage is 1V, and wherein said channel region comprises boron at a concentration less than 10 17 cm -3 .

Claim 60

Dependent Claim 134 words

An active matrix display device comprising: a substrate; a plurality of pixel electrodes provided over said substrate; a plurality of thin film transistors formed over said substrate and electrically connected with said plurality of pixel electrodes, each of said thin film transistors including: a silicon nitride film formed on the substrate, a silicon oxide film formed on the substrate, a silicon film formed on the silicon oxide film, said silicon film including source and drain regions, and a channel region interposed therebetween, a gate electrode formed adjacent to the channel region with a gate insulating therebetween, wherein an off current from said thin film transistor is less than 10 -12 A wherein a drain voltage is 1V, and wherein said channel region comprises boron at a concentration less than 10 17 cm -3 .

Claim 61

Dependent Claim 19 words

A device according to claim 47, wherein each of the plurality of thin film transistors is a top-gate transistor.

Claim 62

Dependent Claim 17 words

A device according to claim 47, wherein said silicon film comprises polycrystalline silicon or single crystal silicon.

Claim 63

Dependent Claim 90 words

An active matrix display device comprising: a substrate; a plurality of pixel electrodes provided over said substrate; a plurality of multi-gate type thin film transistors formed over said substrate and electrically connected with said plurality of pixel electrodes, each of said thin film transistors including a channel region comprising silicon, wherein an off current from said thin film transistor is less than 10 -12 A wherein a drain voltage is 1V, and wherein said channel region comprises a p-type impurity at a concentration less than 10 17 cm -3 .

Claim 64

Dependent Claim 90 words

An active matrix display device comprising: a substrate; a plurality of pixel electrodes provided over said substrate; a plurality of multi-gate type thin film transistors formed over said substrate and electrically connected with said plurality of pixel electrodes, each of said thin film transistors including a channel region comprising silicon, wherein an off current from said thin film transistor is less than 10 -12 A wherein a drain voltage is 1V, and wherein said channel region comprises a p-type impurity at a concentration less than 10 17 cm -3 .

Claim 65

Dependent Claim 21 words

A device according to claim 50, wherein each of the plurality of multi-gate type thin film transistors is a top-gate transistor.

Claim 66

Dependent Claim 17 words

A device according to claim 50, wherein said channel region comprises polycrystalline silicon or single crystal silicon.

Claim 67

Dependent Claim 136 words

An active matrix display device comprising: a substrate; a plurality of pixel electrodes provided over said substrate; a plurality of thin film transistors formed over said substrate and electrically connected with said plurality of pixel electrodes, each of said thin film transistors including: a silicon nitride film formed on the substrate, a silicon oxide film formed on the substrate, a silicon film formed on the silicon oxide film, said silicon film including source and drain regions, and a channel region interposed therebetween, a gate electrode formed adjacent to the channel region with a gate insulating therebetween, wherein an off current from said thin film transistor is less than 10 -12 A wherein a drain voltage is 1V, and wherein said channel region comprises a p-type impurity at a concentration less than 10 17 cm -3 .

Claim 68

Dependent Claim 136 words

An active matrix display device comprising: a substrate; a plurality of pixel electrodes provided over said substrate; a plurality of thin film transistors formed over said substrate and electrically connected with said plurality of pixel electrodes, each of said thin film transistors including: a silicon nitride film formed on the substrate, a silicon oxide film formed on the substrate, a silicon film formed on the silicon oxide film, said silicon film including source and drain regions, and a channel region interposed therebetween, a gate electrode formed adjacent to the channel region with a gate insulating therebetween, wherein an off current from said thin film transistor is less than 10 -12 A wherein a drain voltage is 1V, and wherein said channel region comprises a p-type impurity at a concentration less than 10 17 cm -3 .

Claim 69

Dependent Claim 19 words

A device according to claim 53, wherein each of the plurality of thin film transistors is a top-gate transistor.

Claim 70

Dependent Claim 17 words

A device according to claim 53, wherein said silicon film comprises polycrystalline silicon or single crystal silicon.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2003-02-21	2003-08-23	2004-02-22	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2007-02-21	2007-08-23	2008-02-22	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2011-02-21	2011-08-23	2012-02-22	$7700.00	Window Closed / Lapsed

Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors

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