US5170244A
Expired / Lapsed
US
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Electrode interconnection material, semiconductor device using this material and driving circuit substrate for display device
Assignee: Toshiba Corp
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Filing: 1991-04-08
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Granted: 1992-12-08
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Expires: 2011-04-08
Abstract
Abstract There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-tantalum alloy film having a tantalum composition ratio of above 84 atomic percent. Further using this Mo-Ta alloy, there is provided a display device driving circuit substrate comprising an insulating substrate, a plurality of address lines and data lines intersecting each other on the substrate, the address line being formed of a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent, a plurality of thin-film transistors each formed at an intersection of said address and data lines and having its gate electrode connected to an address line and its source electrode connected to data line, and a plurality of display electrodes connected to the drain electrode of the thin-film transistor.
Inventors
- 👤 Masayuki Dohjo
- 👤 Yasuhisa Oana
- 👤 Mitsushi Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10D; H10D86/00; H10W70/00; H10W70/60; H10W70/62; H10W70/66
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
156 words
A driving circuit substrate for a display device, comprising: an insulator substrate; a plurality of address lines and data lines formed on said address lines with an insulation layer interposed therebetween intersecting each other on said substrate, the address line having a multi-layered structure including a first layer directly overlying a second layer, said first layer being formed of molybdenum-tantalum alloy containing from more than 84 atomic % to 100 atomic % of tantalum, said second layer being made of a metallic material having a body-centered cubic lattice structure and a lattice constant similar to that of molybdenum and tantalum; a plurality of thin-film transistors each formed at an intersection of said address and data lines, each of the transistors having a gate electrode connected to an address line, a source electrode connected to a data line, and a drain electrode; and a plurality of display electrodes connected to the drain electrodes of the thin-film transistors.
Claim 2
Dependent Claim
156 words
A driving circuit substrate for a display device, comprising: an insulator substrate; a plurality of address lines and data lines formed on said address lines with an insulation layer interposed therebetween intersecting each other on said substrate, the address line having a multi-layered structure including a first layer directly overlying a second layer, said first layer being formed of molybdenum-tantalum alloy containing from more than 84 atomic % to 100 atomic % of tantalum, said second layer being made of a metallic material having a body-centered cubic lattice structure and a lattice constant similar to that of molybdenum and tantalum; a plurality of thin-film transistors each formed at an intersection of said address and data lines, each of the transistors having a gate electrode connected to an address line, a source electrode connected to a data line, and a drain electrode; and a plurality of display electrodes connected to the drain electrodes of the thin-film transistors.
Claim 3
Dependent Claim
45 words
The driving circuit substrate according to claim 1, wherein said metallic material of said second layer of the address line is selected from the group consisting of V, Cr, Fe, Nb, W, Mo, and a molybdenum-tantalum alloy containing 30 to 84 atomic % of tantalum.
Claim 4
Dependent Claim
29 words
The driving circuit substrate according to claim 2, wherein said molybdenum-tantalum alloy for forming said second layer of the address line contains 55 to 84 atomic % of tantalum.
Claim 5
Dependent Claim
94 words
The driving circuit substrate according to claim 1, wherein said gate electrode of the thin-film transistor has a multilayered structure including a first layer directly overlying a second layer, said first layer of the gate electrode being formed of molybdenum-tantalum alloy containing from more than 84 atomic % to 100 atomic % of tantalum, said second layer of the gate electrode being made of a metallic material having a bodycentered cubic lattice structure and a lattice constant similar to that of molybdenum and tantalum, said gate electrode being formed integral with the address line.
Claim 6
Dependent Claim
45 words
The driving circuit substrate according to claim 4, wherein said metallic material of said second layer of the gate electrode is selected from the group consisting of V, Cr, Fe, Nb, W, Mo, and a molybdenum-tantalum alloy containing 30 to 84 atomic % of tantalum.
Claim 7
Dependent Claim
29 words
The driving circuit substrate according to claim 5, wherein said molybdenum-tantalum alloy for forming said second layer of the gate electrode contains 55 to 84 atomic % of tantalum.
Claim 8
Dependent Claim
36 words
The driving circuit substrate according to claim 1, wherein said thin-film transistor includes a semiconductor thin film formed over said gate electrode through a gate insulating film comprising an anodic oxidation film or thermal oxidation film.
Claim 9
Dependent Claim
29 words
The driving circuit substrate according to claim 1, wherein said drain and source electrodes are formed of the same material as said data line on the semiconductor thin film.
Claim 10
Dependent Claim
50 words
The driving circuit substrate according to claim 7, wherein an insulating interlay film comprising an anodic oxidation film or thermal oxidation film for the address line and a semiconductor thin film formed simultaneously with the semiconductor thin film for the transistor are formed between the respective address and data lines.
Claim 11
Dependent Claim
156 words
A driving circuit substrate for a display device, comprising: an insulator substrate; a plurality of address lines and data lines formed on said address lines with an insulation layer interposed therebetween intersecting each other on said substrate; a plurality of thin-film transistors each formed at an intersection of said address and data lines, each of the transistors having a gate electrode connected to an address line, a source electrode connected to a data line, and a drain electrode, said gate electrode having a multi-layered structure including a first layer directly overlying a second layer, said first layer being formed of molybdenum-tantalum alloy containing from more than 84 atomic % to 100 atomic % of tantalum, said second layer being made of a metallic material having a body-centered cubic lattice structure and a lattice constant similar to that of molybdenum and tantalum; and a plurality of display electrodes connected to the drain electrodes of the thin-film transistors.
Claim 12
Dependent Claim
156 words
A driving circuit substrate for a display device, comprising: an insulator substrate; a plurality of address lines and data lines formed on said address lines with an insulation layer interposed therebetween intersecting each other on said substrate; a plurality of thin-film transistors each formed at an intersection of said address and data lines, each of the transistors having a gate electrode connected to an address line, a source electrode connected to a data line, and a drain electrode, said gate electrode having a multi-layered structure including a first layer directly overlying a second layer, said first layer being formed of molybdenum-tantalum alloy containing from more than 84 atomic % to 100 atomic % of tantalum, said second layer being made of a metallic material having a body-centered cubic lattice structure and a lattice constant similar to that of molybdenum and tantalum; and a plurality of display electrodes connected to the drain electrodes of the thin-film transistors.
Claim 13
Dependent Claim
45 words
The driving circuit substrate according to claim 10, wherein said metallic material of said second layer of the gate electrode is selected from the group consisting of V, Cr, Fe, Nb, W, Mo, and a molybdenum-tantalum alloy containing 30 to 84 atomic % of tantalum.
Claim 14
Dependent Claim
29 words
The driving circuit substrate according to claim 11, wherein said molybdenum-tantalum alloy for forming said second layer of the gate electrode contains 55 to 84 atomic % of tantalum.
Claim 15
Dependent Claim
90 words
The driving circuit substrate according to claim 10, wherein the address line has a multi-layered structure including a first layer directly overlying a second layer, said first layer of the address line being formed of molybdenum-tantalum alloy containing from more than 84 atomic % to 100 atomic % of tantalum, said second layer of the address line being made of a metallic material having a body-centered cubic lattice structure and a lattice constant similar to that of molybdenum and tantalum, said address line being formed integral with the gate electrode.
Claim 16
Dependent Claim
45 words
The driving circuit substrate according to claim 13, wherein said metallic material of said second layer of the address line is selected from the group consisting of V, Cr, Fe, Nb, W, Mo, and a molybdenum-tantalum alloy containing 30 to 84 atomic % of tantalum.
Claim 17
Dependent Claim
29 words
The driving circuit substrate according to claim 13, wherein said molybdenum-tantalum alloy for forming said second layer of the address line contains 55 to 84 atomic % of tantalum.
Claim 18
Dependent Claim
36 words
The driving circuit substrate according to claim 10, wherein said thin-film transistor includes a semiconductor thin film formed over said gate electrode through a gate insulating film comprising an anodic oxidation film or thermal oxidation film.
Claim 19
Dependent Claim
29 words
The driving circuit substrate according to claim 10, wherein said drain and source electrodes are formed of the same material as said data line on the semiconductor thin film.
Claim 20
Dependent Claim
50 words
The driving circuit substrate according to claim 16, wherein an insulating interlayer film comprising an anodic oxidation film or thermal oxidation film for the address line and a semiconductor thin film formed simultaneously with the semiconductor thin film for the transistor are formed between the respective address and data lines.
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| 3.5 Years (Year 4) | 1995-12-08 | 1996-06-08 | 1996-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-08 | 2000-06-08 | 2000-12-08 | $3760.00 | Window Closed / Lapsed |
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