Metal contact and interconnection system for nonhermetic enclosed semiconductor devices

Claim 2

The device as defined in claim 2, wherein said high conductivity metal layer is gold.

Claim 3

An electrical connection system for an integrated circuit having aplurality of circuit components formed adjacent one surface of a substrate and an insulating layer on said one surface having a plurality of openings exposing portions of said circuit components, said system comprising: multilayer interconnections on said insulating layer electrically connecting certain portions of said circuit components through said openings in said insulating layer, another insulating layer on said multilayer interconnections having a plurality of openings exposing portions of said multilayer interconnections, electrical interconnections on said another insulating layer electrically connecting certain portions of said multilayer interconnections, said multilayer interconnection having a lower layer comprised of molybdenum, an intermediate high conductivity metal layer, and an upper layer comprised of molybdenum, said electrical interconnections including a lower layer comprised of a mixture of molybdenum and a modifier metal having greater corrosion resistance than molybdenum and an upper high conductivity metal layer, whereby the resulting electrical connection system exhibits significant corrosion resistant properties in semiconductor device operating environments.

Claim 4

The system as defined in claim 4, wherein said high conductivity metal layer is gold.

Claim 5

The system as defined in claim 4, wherein said modifier metal is taken from the group consisting ot titanium, tantalum, chromium, zirconium, hafnium, and silicon.

Claim 6

The system as defined in claim 4, including a layer comprising another metal between said multilayer interconnections and said portions of said circuit components.

Claim 7

An electrical connection system for an integrated circuit having a plurality of circuit components formed adjacent one surface of a semiconductor substrate, a first insulating layer on said one surface having openings exposing portions of said circuit components, said system comprising: first multilayer interconnections on and adherent to said first insulating layer ohmically connecting and electrically interconnecting certain portions of said circuit components through said openings in said insulating layer, a second insulating layer on and adherent to said first multilayer interconnections having openings exposing portions of saiD first multilayer interconnections, second multilayer interconnections on and adherent to said second insulating layer ohmically engaging and electrically interconnecting the exposed portions of said first multilayer interconnections including a lower layer comprised of molybdenum, an intermediate high conductivity metal layer and an upper layer comprised of molybdenum, said second multilayer interconnections including a lower layer comprised of a homogeneous mixture of molybdenum and a modifier metal and an upper high conductivity metal layer, whereby said electrical connection system for an integrated circuit exhibits significant corrosion resistant properties in semiconductor device operating environments.

Claim 8

The electrical connection system as defined in claim 8, wherein said high conductivity metal layer is gold.

Claim 9

The electrical connection system as defined in claim 8, wherein said modifier metal is taken from the group consisting of titanium, tantalum, chromium, zirconium, hafnium, and silicon.

Claim 10

A nonhermetically mounted semiconductor device comprising a semicondcutor substrate having first and second zones of opposite conductivity types forming a p-n junction therebetween terminating at one surface of said substrate beneath an insulating layer on said one surface, said insulating defining an opening therein exposing a portion of said first zone, a metallic layer on and adherent to said insulating layer and ohmically connected to an exposed portion of said first zone through said opening, said metallic layer comprising a mixture of molybdenum and a modifier metal having greater corrosion resistance than molybdenum, whereby said device exhibits significant corrosion resistant properties in semiconductor device operating environments.

Claim 11

A nonhermetically mounted semiconductor device as defined in claim 11, including a high conductivity metal layer on at least a portion of said metallic layer.

Claim 12

A nonhermetically mounted semicondcutor device as defined in claim 12, wherein said high conductivity metal layer is gold.

Claim 13

The nonhermetically mounted semicondcutor device as defined in claim 11, wherein said modifier metal is taken from the group composed of titanium, tantalum, zirconium, chromium, hafnium, and silicon.