US3097329A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Sintered plate with graded concentration of metal to accommodate adjacent metals having unequal expansion coefficients
Assignee: Siemens Schuckertwerke AG
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Filing: 1961-06-16
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Granted: 1963-07-09
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Expires: 1981-06-16
Abstract
No abstract record available.
Inventors
- 👤 Siemens Alfred
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:37
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/30; B; B23; B23K; B23K35/00; B23K35/001; B23K35/007; H10P; H10P95/00; B23K2035/008; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12014; Y10T428/12021; Y10T428/12028; Y10T428/12042; Y10T428/12063; Y10T428/12069; Y10T428/12458; Y10T428/12479; Y10T428/12493; Y10T428/12528; Y10T428/12674; Y10T428/12771; Y10T428/12806; Y10T428/12826; Y10T428/12833
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
114 words
AN ELECTRONIC SEMICONDUCTOR DEVICE SUBJECT TO THERMAL ALTERNATING STRESSES WHEN IS IN USE, COMPRISING A CRYSTALLINE SEMICONDUCTOR BODY, A CARRIER STRUCTURE OF GOOD CONDUCTING METAL, AND AN INTERMEDIATE PLATE HAVING RESPECTIVE SURFACES BONDED TO SAID SEMICONDUCTOR BODY AND TO SAID CARRIER STRUCTURE RESPECTIVELY IN FACE-TO-FACE AREA CONTACT WITH BOTH, SAID INTERMEDIATE PLATE CONSISTING AT ITS SEMICONDUCTOR SIDE OF A CONTACT METAL HAVING A HIGHER MELTING POINT THAN SAID CARRIER METAL, AND SAID PLATE CONSISTING AT ITS CARRIER SIDE OF ANOTHER METAL HAVINGG THE SAME THERMAL COEFFCIENT OF EXPANSION AS SAID CARRIER METAL, THE INTERMEDIATE REGION OF SAID PLATE HAVING A PROPORTION OF SAID CONTACT METAL INCREASING FROM SAID CARRIER SIDE TOWARDS SAID SEMICONDUCTOR SIDE.
Claim 2
Dependent Claim
114 words
AN ELECTRONIC SEMICONDUCTOR DEVICE SUBJECT TO THERMAL ALTERNATING STRESSES WHEN IS IN USE, COMPRISING A CRYSTALLINE SEMICONDUCTOR BODY, A CARRIER STRUCTURE OF GOOD CONDUCTING METAL, AND AN INTERMEDIATE PLATE HAVING RESPECTIVE SURFACES BONDED TO SAID SEMICONDUCTOR BODY AND TO SAID CARRIER STRUCTURE RESPECTIVELY IN FACE-TO-FACE AREA CONTACT WITH BOTH, SAID INTERMEDIATE PLATE CONSISTING AT ITS SEMICONDUCTOR SIDE OF A CONTACT METAL HAVING A HIGHER MELTING POINT THAN SAID CARRIER METAL, AND SAID PLATE CONSISTING AT ITS CARRIER SIDE OF ANOTHER METAL HAVINGG THE SAME THERMAL COEFFCIENT OF EXPANSION AS SAID CARRIER METAL, THE INTERMEDIATE REGION OF SAID PLATE HAVING A PROPORTION OF SAID CONTACT METAL INCREASING FROM SAID CARRIER SIDE TOWARDS SAID SEMICONDUCTOR SIDE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-07-08 | 1967-01-07 | 1967-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-07-08 | 1971-01-07 | 1971-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-07-08 | 1975-01-07 | 1975-07-09 | $7700.00 | Window Closed / Lapsed |