US4905066A
Expired / Lapsed
US
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Thin-film transistor
Assignee: Toshiba Corp
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Filing: 1989-04-19
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Granted: 1990-02-27
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Expires: 2009-04-19
Abstract
Abstract A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode, semiconductor film formed on said gate insulation film and contacting the silicon nitride film, and source and drain electrodes formed on the semiconductor film.
Inventors
- 👤 Masayuki Dohjo
- 👤 Yasuhisa Oana
- 👤 Mitsushi Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:49
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10D64/691; H10D64/693; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
79 words
A thin-film transistor comprising: a substrate; a gate electrode formed in said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic of tantalum; gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode; semiconductor film formed on said gate insulation film and contacting the silicon nitride film; and source and drain electrodes formed on the semiconductor film.
Claim 2
Dependent Claim
79 words
A thin-film transistor comprising: a substrate; a gate electrode formed in said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic of tantalum; gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode; semiconductor film formed on said gate insulation film and contacting the silicon nitride film; and source and drain electrodes formed on the semiconductor film.
Claim 3
Dependent Claim
19 words
The thin-film transistor according to claim 1, wherein said gate electrode has a thickness of at least 500 Å.
Claim 4
Dependent Claim
15 words
The thin-film transistor according to claim 1, wherein said semiconductor film is made of a-Si.
Claim 5
Dependent Claim
16 words
The thin-film transistor according to claim 1, wherein said oxide film is an anodically oxidized film.
Claim 6
Dependent Claim
25 words
The thin-film transistor according to claim 1, further comprising silicon oxide (SiO x ) film interposed between said oxide film and said silicon nitride film.
Claim 7
Dependent Claim
28 words
The thin-film transistor according to claim 1, further comprising passivation film covering the portions of said semiconductor film other than those portions contacting said source and drain electrodes.
References Cited (Backward Citations)
US4531144A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-26 | 1993-08-28 | 1994-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-26 | 1997-08-28 | 1998-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-26 | 2001-08-28 | 2002-02-27 | $7700.00 | Window Closed / Lapsed |