US4775641A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making silicon-on-sapphire semiconductor devices
Assignee: Intersil Corp
•
Filing: 1986-09-25
•
Granted: 1988-10-04
•
Expires: 2006-09-25
Abstract
Abstract A radiation hardened silicon-on-insulator semiconductor device and method of making the same is disclosed. A region is formed in the silicon layer adjacent the insulating substrate which has a high density of naturally occurring crystallographic defects. This region substantially reduces the back-channel leakage that occurs when the device is operated after being irradiated.
Inventors
- 👤 Michael T. Duffy
- 👤 Glenn W. Cullen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 19:09
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6706; H10D30/6758; H10D30/6759; H10D62/00; H10D62/50; H10D62/53; H10D86/00; H10D86/01; H10D86/03; H10P; H10P36/00; H10P36/03; H10P36/07; Y; Y10; Y10S; Y10S257/00; Y10S257/906; Y10S438/00; Y10S438/953
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
69 words
In a method of making a silicon-on-insulator semiconductor device including a layer of silicon on an insulating substrate, a gate electrode and source and drain regions, the improvement comprising: forming a first region in said layer of silicon adjacent said insulating substrate which has a high density of naturally occurring crystallographic defects; and forming a second region in said layer of silicon which is substantially free of crystallographic defects.
Claim 2
Dependent Claim
69 words
In a method of making a silicon-on-insulator semiconductor device including a layer of silicon on an insulating substrate, a gate electrode and source and drain regions, the improvement comprising: forming a first region in said layer of silicon adjacent said insulating substrate which has a high density of naturally occurring crystallographic defects; and forming a second region in said layer of silicon which is substantially free of crystallographic defects.
Claim 3
Dependent Claim
27 words
A method of making a silicon-on-insulator semiconductor device in accordance with claim 1 wherein said first region has a thickness sufficient to make said device radiation hard.
Claim 4
Dependent Claim
19 words
A method of making a silicon-on-insulator semiconductor device in accordance with claim 1 wherein said insulating substrate is sapphire.
Claim 5
Dependent Claim
26 words
A method of making a silicon-on-insulator semiconductor device in accordance with claim 1 wherein said first region has a thickness of at least about 800 Å.
Claim 6
Dependent Claim
26 words
A method of making a silicon-on-insulator semiconductor device in accordance with claim 1 wherein said first region has a thickness of at least about 1,000 Å.
Claim 7
Independent Claim
83 words
A method of making a silicon-on-insulator semiconductor device comprising the steps of forming a layer of monocrystalline silicon on an insulating substrate, said monocrystalline silicon layer having at least a region adjacent said substrate which has a high density of naturally occurring crystallographic defects; forming an amorphous region in said silicon layer above said high density region of naturally occurring crystallographic defects; annealing said silicon layer to recrystallize said amorphous region to form a monocrystalline region which is substantially free of crystallographic defects.
Claim 8
Independent Claim
83 words
A method of making a silicon-on-insulator semiconductor device comprising the steps of forming a layer of monocrystalline silicon on an insulating substrate, said monocrystalline silicon layer having at least a region adjacent said substrate which has a high density of naturally occurring crystallographic defects; forming an amorphous region in said silicon layer above said high density region of naturally occurring crystallographic defects; annealing said silicon layer to recrystallize said amorphous region to form a monocrystalline region which is substantially free of crystallographic defects.
Claim 9
Dependent Claim
18 words
A method of making a silicon-on-insulator semiconductor device according to claim 6 wherein said insulating substrate is sapphire.
Claim 10
Dependent Claim
37 words
A method of making a silicon-on-insulator semiconductor device according to claim 7 wherein said layer of monocrystalline silicon is formed by epitaxially growing silicon at a rate which produces a large number of naturally occurring crystallographic defects.
Claim 11
Dependent Claim
19 words
A method of making a silicon-on-insulator semiconductor device according to claim 8 wherein said rate is about 0.1-1.0 μm/min.
Claim 12
Dependent Claim
27 words
A method of making a silicon-on-insulator semiconductor device according to claim 6 wherein said amorphous region is formed by ion implanting said silicon layer with silicon ions.
Claim 13
Dependent Claim
45 words
A method of making a silicon-on-insulator semiconductor device according to claim 10 wherein silicon ions are implanted into said silicon layer to a depth which is less than or equal to about T-800 Å, where T is the thickness of said layer of monocrystalline silicon
Claim 14
Dependent Claim
30 words
A method of making a silicon-on-insulator semiconductor device according to claim 10 wherein said silicon ions are implanted at a dosaqe of about 1×10 15 -5×10 15 ions/cm 2 .
Claim 15
Dependent Claim
31 words
A method of making a silicon-on-insulator semiconductor device according to claim 6 further comprising the step of: annealing said sapphire substrate before the step of forming said layer of monocrystalline silicon.
Claim 16
Dependent Claim
38 words
A method of making a silicon-on-insulator semiconductor device according to claim 6 wherein said region adjacent said insulating substrate having a high density of naturally occurring crystallographic defects has a thickness sufficient to make said device radiation hard.
References Cited (Backward Citations)
US3393088A
Cited
US3658586A
Cited
US3885061A
Cited
US4259779A
Cited
US4177084A
Cited
US4252574A
Cited
US4279688A
Cited
US4385937A
Cited
US4463492A
Cited
US4509990A
Cited
US4659392A
Cited
US4634473A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-04 | 1992-04-04 | 1992-10-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-04 | 1996-04-04 | 1996-10-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-04 | 2000-04-04 | 2000-10-04 | $7700.00 | Window Closed / Lapsed |