US4279688A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of improving silicon crystal perfection in silicon on sapphire devices
Assignee: Intersil Corp
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Filing: 1980-03-17
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Granted: 1981-07-21
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Expires: 2000-03-17
Abstract
Abstract A process for forming a relatively defect free layer of silicon on an insulating substrate wherein as soon as growth islands are formed on the substrate, to a point just prior to the complete coverage of the substrate with silicon, the formation of the layer is temporarily terminated. The growth islands are maintained at a given temperature for a predetermined period, to allow any defects, which may have started during the initial formation of the growth island, to be self-cured or to annihilate themselves. Thereafter, the growth of silicon is continued until the desired layer thickness is achieved.
Inventors
- 👤 Marvin S. Abrahams
- 👤 Joseph Blanc
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:36
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; C30B25/20; C30B25/205; Y; Y10; Y10S; Y10S438/00; Y10S438/967
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
101 words
A method of improving crystalline silicon perfection comprising the steps of: (a) providing an insulating substrate; (b) initially depositing a discontinuous layer of crystalline silicon on the substrate at a given growth temperature, the layer characterized by the formation of discrete growth islands of crystalline silicon; (c) terminating the deposition of the crystalline silicon; (d) maintaining the substrate and growth islands at the given growth temperature for a given period of time to cure any crystallographic misorientations and defects that may have been formed in the silicon islands; and (e) depositing silicon on the now cured islands and on the substrate.
Claim 2
Independent Claim
101 words
A method of improving crystalline silicon perfection comprising the steps of: (a) providing an insulating substrate; (b) initially depositing a discontinuous layer of crystalline silicon on the substrate at a given growth temperature, the layer characterized by the formation of discrete growth islands of crystalline silicon; (c) terminating the deposition of the crystalline silicon; (d) maintaining the substrate and growth islands at the given growth temperature for a given period of time to cure any crystallographic misorientations and defects that may have been formed in the silicon islands; and (e) depositing silicon on the now cured islands and on the substrate.
Claim 3
Dependent Claim
11 words
The article of manufacture formed by the method of claim 1.
Claim 4
Dependent Claim
23 words
The method of claim 1, wherein step (a) comprises: selecting the insulating substrate from the group consisting of sapphire, spinel and gallium phosphide.
Claim 5
Dependent Claim
11 words
The article of manufacture formed by the method of claim 3.
Claim 6
Dependent Claim
40 words
The method of claim 3, wherein step (b) comprises: depositing the discontinuous layer of silicon at the rate of about 0.4 micron per minute for a period of about 1-3 seconds at a given growth temperature of about 1000° C.
Claim 7
Dependent Claim
11 words
The article of manufacture formed by the method of claim 5.
Claim 8
Dependent Claim
37 words
The method of claim 5, wherein in step (d): the temperature of the substrate and growth islands is maintained at the given growth temperature for a period of about two minutes after terminating the deposition of silicon.
Claim 9
Dependent Claim
11 words
The article of manufacture formed by the method of claim 7.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-07-20 | 1985-01-19 | 1985-07-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-07-20 | 1989-01-19 | 1989-07-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-07-20 | 1993-01-19 | 1993-07-21 | $7700.00 | Window Closed / Lapsed |