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US3413145A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of forming a crystalline semiconductor layer on an alumina substrate

Assignee: RCA Corp
•
Filing: 1965-11-29
•
Granted: 1968-11-26
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Expires: 1985-11-29
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Abstract

No abstract record available.

Inventors

  • 👤 Paul H Robinson
  • 👤 David J Dumin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 22:00
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C22; C22F; C22F1/00; C22F1/16; C30B33/00; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/36; Y; Y10; Y10S; Y10S148/00; Y10S148/15

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

US2943007A Cited
US2992903A Cited
US3172791A Cited
US3218204A Cited
US3177100A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1971-11-26 1972-05-27 1972-11-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1975-11-26 1976-05-27 1976-11-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1979-11-26 1980-05-27 1980-11-26 $7700.00 Window Closed / Lapsed

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