US3177100A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3
Assignee: RCA Corp
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Filing: 1963-09-09
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Granted: 1965-04-06
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Expires: 1983-09-09
Abstract
No abstract record available.
Inventors
- 👤 Mayer Alfred
- 👤 Lesky Joseph
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-22 21:37
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B25/00; C30B25/02; H; H10; H10D; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/36; H10P14/3602; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/049; Y10S148/053; Y10S148/15; Y10S148/151
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
38 words
THE METHOD OF FORMING AN EPITAXIAL SILICON LAYER ON A SEMICONDUCTIVE WAFER, COMPRISING HEATING SAID WAFER AT A TEMPERATURE OF ABOUT 1000* TO 1350*C. IN AN AMBIENT CONSISTING ESSENTIALLY OF HYDROGEN AND 0.01 TO 1.5 VOLUME PERCENT SILANE.
Claim 2
Independent Claim
38 words
THE METHOD OF FORMING AN EPITAXIAL SILICON LAYER ON A SEMICONDUCTIVE WAFER, COMPRISING HEATING SAID WAFER AT A TEMPERATURE OF ABOUT 1000* TO 1350*C. IN AN AMBIENT CONSISTING ESSENTIALLY OF HYDROGEN AND 0.01 TO 1.5 VOLUME PERCENT SILANE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-04-05 | 1968-10-05 | 1969-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-04-05 | 1972-10-05 | 1973-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-04-05 | 1976-10-05 | 1977-04-06 | $7700.00 | Window Closed / Lapsed |