Patent US6281520B1 successfully refreshed from Google Patents.
US6281520B1
Expired / Lapsed
US
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Gate insulated field effect transistors and method of manufacturing the same
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1998-09-09
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Granted: 2001-08-28
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Expires: 2018-09-09
Abstract
Abstract A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is endowed with immunity to illumination incident thereupon which would otherwise impair the normal operation of the transistor. The spoiling impurity is not introduced into transistors which are located in order not to receive light rays.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6733; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D30/675; H10D30/6757; H10D86/00; H10D86/40; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/13624; G02F1/136245
Claims Analysis
Total Claims: 83
Claim 1
Independent Claim
146 words
A liquid crystal device comprising: a substrate having an insulating surface; a plurality of switching elements provided over said substrate; a plurality of first signal lines having a first side and a second side extending in a first direction over said substrate; a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction; an organic resin film formed over the plurality of switching elements, the plurality of first signal lines and the plurality of second signal lines; a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein at least a portion of said plurality of first signal lines between the first side and the second side are completely covered by said plurality of pixel electrodes.
Claim 2
Dependent Claim
146 words
A liquid crystal device comprising: a substrate having an insulating surface; a plurality of switching elements provided over said substrate; a plurality of first signal lines having a first side and a second side extending in a first direction over said substrate; a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction; an organic resin film formed over the plurality of switching elements, the plurality of first signal lines and the plurality of second signal lines; a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein at least a portion of said plurality of first signal lines between the first side and the second side are completely covered by said plurality of pixel electrodes.
Claim 3
Dependent Claim
43 words
The device according to claim 1 wherein each of the plurality of switching elements comprises a thin film transistor of a type selected from the group consisting of a staggered type, a coplanar type, an inverted staggered type and an inverted coplanar type.
Claim 4
Dependent Claim
40 words
The device according to claim 1 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 5
Dependent Claim
24 words
The device according to claim 1 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 6
Dependent Claim
24 words
The device according to claim 1 wherein each of said plurality of switching elements has an active region comprising crystalline silicon doped with hydrogen.
Claim 7
Dependent Claim
13 words
The device according to claim 1 wherein said device is a reflection type.
Claim 8
Dependent Claim
13 words
The device according to claim 1 wherein said device is a transmission type.
Claim 9
Dependent Claim
141 words
A liquid crystal device comprising: a substrate having an insulating surface; a plurality of switching elements provided over said substrate; a plurality of first signal lines extending in a first direction over said substrate; a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction; an organic resin film formed over the plurality of switching elements, the plurality of first signal lines and the plurality of second signal lines; a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein said plurality of first signal lines extend below said plurality of pixel electrodes so that each of said plurality of pixel electrodes is divided into two parts as viewed from above.
Claim 10
Dependent Claim
141 words
A liquid crystal device comprising: a substrate having an insulating surface; a plurality of switching elements provided over said substrate; a plurality of first signal lines extending in a first direction over said substrate; a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction; an organic resin film formed over the plurality of switching elements, the plurality of first signal lines and the plurality of second signal lines; a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein said plurality of first signal lines extend below said plurality of pixel electrodes so that each of said plurality of pixel electrodes is divided into two parts as viewed from above.
Claim 11
Dependent Claim
43 words
The device according to claim 8 wherein each of the plurality of switching elements comprises a thin film transistor of a type selected from the group consisting of a staggered type, a coplanar type, an inverted staggered type and an inverted coplanar type.
Claim 12
Dependent Claim
40 words
The device according to claim 8 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 13
Dependent Claim
24 words
The device according to claim 8 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 14
Dependent Claim
13 words
The device according to claim 8 wherein said device is a reflection type.
Claim 15
Dependent Claim
13 words
The device according to claim 8 wherein said device is a transmission type.
Claim 16
Dependent Claim
24 words
The device according to claim 8 wherein each of said plurality of switching elements has an active region comprising crystalline silicon doped with hydrogen.
Claim 17
Dependent Claim
99 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one switching element provided over said substrate; at least one signal line for supplying signals to said at least one switching element; an interlayer insulating film comprising an organic material over said substrate covering said at least one switching element and said at least one signal line; at least one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein at least one signal line extends below a middle portion of said at least one pixel electrode.
Claim 18
Dependent Claim
99 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one switching element provided over said substrate; at least one signal line for supplying signals to said at least one switching element; an interlayer insulating film comprising an organic material over said substrate covering said at least one switching element and said at least one signal line; at least one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein at least one signal line extends below a middle portion of said at least one pixel electrode.
Claim 19
Dependent Claim
43 words
The device according to claim 15 wherein each of the plurality of switching elements comprises a thin film transistor of a type selected from the group consisting of a staggered type, a coplanar type, an inverted staggered type and an inverted coplanar type.
Claim 20
Dependent Claim
40 words
The device according to claim 15 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 21
Dependent Claim
24 words
The device according to claim 15 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 22
Dependent Claim
13 words
The device according to claim 15 wherein said device is a reflection type.
Claim 23
Dependent Claim
13 words
The device according to claim 15 wherein said device is a transmission type.
Claim 24
Dependent Claim
25 words
The device according to claim 15 wherein each of the said plurality of switching elements has an active region comprising crystalline silicon doped with hydrogen.
Claim 25
Dependent Claim
131 words
A liquid crystal device comprising: a substrate having an insulating surface; a plurality of switching elements provided over said substrate; a plurality of first signal lines having a first side and a second side extending in a first direction over said substrate; a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction; an interlayer insulating film formed over the plurality of switching elements; a plurality of pixel electrodes formed over said interlayer insulating film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein a portion of said plurality of first signal lines between the first side and the second side are completely covered by said plurality of pixel electrodes.
Claim 26
Dependent Claim
131 words
A liquid crystal device comprising: a substrate having an insulating surface; a plurality of switching elements provided over said substrate; a plurality of first signal lines having a first side and a second side extending in a first direction over said substrate; a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction; an interlayer insulating film formed over the plurality of switching elements; a plurality of pixel electrodes formed over said interlayer insulating film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein a portion of said plurality of first signal lines between the first side and the second side are completely covered by said plurality of pixel electrodes.
Claim 27
Dependent Claim
39 words
The device according to claim 22 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and polymer liquid crystal.
Claim 28
Dependent Claim
24 words
The device according to claim 22 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 29
Dependent Claim
13 words
The device according to claim 22 wherein said device is a reflection type.
Claim 30
Dependent Claim
13 words
The device according to claim 22 wherein said device is a transmission type.
Claim 31
Dependent Claim
128 words
A liquid crystal device comprising: a substrate having an insulating surface; a plurality of switching elements provided over said substrate; a plurality of first signal lines extending in a first direction over said substrate; a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction; an interlayer insulating film formed over the plurality of switching elements; a plurality of pixel electrodes formed over said interlayer insulating film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein said plurality of first signal lines extend below said plurality of pixel electrodes so that each of said plurality of pixel electrodes is divided into two parts as viewed from above.
Claim 32
Dependent Claim
128 words
A liquid crystal device comprising: a substrate having an insulating surface; a plurality of switching elements provided over said substrate; a plurality of first signal lines extending in a first direction over said substrate; a plurality of second signal lines extending over said substrate in a second direction orthogonal to said first direction; an interlayer insulating film formed over the plurality of switching elements; a plurality of pixel electrodes formed over said interlayer insulating film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein said plurality of first signal lines extend below said plurality of pixel electrodes so that each of said plurality of pixel electrodes is divided into two parts as viewed from above.
Claim 33
Dependent Claim
40 words
The device according to claim 27 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 34
Dependent Claim
24 words
The device according to claim 27 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 35
Dependent Claim
13 words
The device according to claim 27 wherein said device is a reflection type.
Claim 36
Dependent Claim
13 words
The device according to claim 27 wherein said device is a transmission type.
Claim 37
Dependent Claim
96 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one switching element provided over said substrate; at least one signal line for supplying signals to said at least one switching element; an interlayer insulating film over said substrate covering said at least one switching element and said at least one signal line; at least one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein said at least one signal line extends below a middle portion of said at least one pixel electrode.
Claim 38
Dependent Claim
96 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one switching element provided over said substrate; at least one signal line for supplying signals to said at least one switching element; an interlayer insulating film over said substrate covering said at least one switching element and said at least one signal line; at least one pixel electrode formed over said interlayer insulating film; and a liquid crystal layer adjacent to said pixel electrode, wherein said at least one signal line extends below a middle portion of said at least one pixel electrode.
Claim 39
Dependent Claim
40 words
The device according to claim 32 wherein said liquid crystal material comprises a material selected from the group consisting of a ferroelectric liquid crystal material, a nematic liquid crystal material, a dispersion type liquid crystal and a polymer liquid crystal.
Claim 40
Dependent Claim
24 words
The device according to claim 32 wherein said liquid crystal material comprises a nematic liquid crystal of guest host type or dielectric anisotropic type.
Claim 41
Dependent Claim
13 words
The device according to claim 32 wherein said device is a reflection type.
Claim 42
Dependent Claim
13 words
The device according to claim 32 wherein said device is a transmission type.
Claim 43
Dependent Claim
113 words
A liquid crystal device comprising: a plurality of switching elements arranged in a matrix form; a plurality of signal lines having a first side and a second side electrically connected to said plurality of switching elements; an organic resin film formed over the plurality of switching elements and the plurality of signal lines; a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein at least a portion of said plurality of signal lines between the first side and the second side is completely covered by said plurality of pixel electrodes.
Claim 44
Dependent Claim
113 words
A liquid crystal device comprising: a plurality of switching elements arranged in a matrix form; a plurality of signal lines having a first side and a second side electrically connected to said plurality of switching elements; an organic resin film formed over the plurality of switching elements and the plurality of signal lines; a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein at least a portion of said plurality of signal lines between the first side and the second side is completely covered by said plurality of pixel electrodes.
Claim 45
Dependent Claim
18 words
The liquid crystal device according to claim 37 wherein said switching elements are insulated gate field effect transistors.
Claim 46
Dependent Claim
21 words
The liquid crystal device according to claim 38 wherein said signal lines are electrically connected to gate electrodes of said transistors.
Claim 47
Dependent Claim
146 words
A liquid crystal device comprising: a plurality of switching elements arranged in a matrix form; a plurality of first signal lines having a first side and a second side extending in a first direction and electrically connected to said switching elements; a plurality of second signal lines extending in a second direction orthogonal to said first direction and electrically connected to said switching elements; an interlayer insulating film formed over the plurality of switching elements; an organic resin film formed on said interlayer insulating film; a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein at least a portion of said plurality of first signal lines between the first side and the second side is completely covered by said plurality of pixel electrodes.
Claim 48
Dependent Claim
146 words
A liquid crystal device comprising: a plurality of switching elements arranged in a matrix form; a plurality of first signal lines having a first side and a second side extending in a first direction and electrically connected to said switching elements; a plurality of second signal lines extending in a second direction orthogonal to said first direction and electrically connected to said switching elements; an interlayer insulating film formed over the plurality of switching elements; an organic resin film formed on said interlayer insulating film; a plurality of pixel electrodes formed over said organic resin film and electrically connected to said plurality of switching elements; and a liquid crystal layer adjacent to said plurality of pixel electrodes, wherein at least a portion of said plurality of first signal lines between the first side and the second side is completely covered by said plurality of pixel electrodes.
Claim 49
Dependent Claim
16 words
The device according to claim 40 wherein said switching elements are insulated gate field effect transistors.
Claim 50
Dependent Claim
19 words
The device according to claim 41 wherein said first signal lines are connected to gate electrodes of said transistors.
Claim 51
Dependent Claim
148 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one switching element having at least one thin film transistor formed over said substrate, said thin film transistor comprising a crystalline semiconductor film and a channel region in said crystalline semiconductor film; at least one signal line electrically connected to said switching element and extending in one direction over said substrate; an organic resin film formed over said switching element and said signal line; at least one pixel electrode formed over said organic resin film wherein said pixel electrode is electrically connected to said switching element; a liquid crystal layer adjacent to said pixel electrode, wherein at least a portion of said signal line is completely covered by said pixel electrode, and wherein a total concentration of carbon, oxygen and nitrogen in said channel region is from 1×10 20 atoms/cm 3 to 20 atom %.
Claim 52
Dependent Claim
148 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one switching element having at least one thin film transistor formed over said substrate, said thin film transistor comprising a crystalline semiconductor film and a channel region in said crystalline semiconductor film; at least one signal line electrically connected to said switching element and extending in one direction over said substrate; an organic resin film formed over said switching element and said signal line; at least one pixel electrode formed over said organic resin film wherein said pixel electrode is electrically connected to said switching element; a liquid crystal layer adjacent to said pixel electrode, wherein at least a portion of said signal line is completely covered by said pixel electrode, and wherein a total concentration of carbon, oxygen and nitrogen in said channel region is from 1×10 20 atoms/cm 3 to 20 atom %.
Claim 53
Dependent Claim
26 words
The semiconductor device according to claim 43 wherein said channel region contains boron at a concentration of from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 54
Dependent Claim
31 words
The device according to claim 43 wherein said transistor is selected from the group consisting of a staggered type, a coplanner type, an inverted staggered type and an inverted coplanner type.
Claim 55
Dependent Claim
145 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one switching element having at least one thin film transistor formed over said substrate, said thin film transistor comprising a crystalline semiconductor including source, drain and channel regions; at least one signal line electrically connected to said switching element and extending in one direction over said substrate; an organic resin film formed over said switching element and said signal line; at least one pixel electrode formed over said organic resin film wherein said pixel electrode is electrically connected to said switching element; a liquid crystal layer adjacent to said pixel electrode, wherein at least a portion of said signal line is completely covered by said pixel electrode, and wherein a total concentration of carbon, oxygen and nitrogen in said source and drain regions is not higher than 7×10 19 atoms/cm 3 .
Claim 56
Dependent Claim
145 words
A liquid crystal device comprising: a substrate having an insulating surface; at least one switching element having at least one thin film transistor formed over said substrate, said thin film transistor comprising a crystalline semiconductor including source, drain and channel regions; at least one signal line electrically connected to said switching element and extending in one direction over said substrate; an organic resin film formed over said switching element and said signal line; at least one pixel electrode formed over said organic resin film wherein said pixel electrode is electrically connected to said switching element; a liquid crystal layer adjacent to said pixel electrode, wherein at least a portion of said signal line is completely covered by said pixel electrode, and wherein a total concentration of carbon, oxygen and nitrogen in said source and drain regions is not higher than 7×10 19 atoms/cm 3 .
Claim 57
Dependent Claim
26 words
The semiconductor device according to claim 46 wherein said channel region contains boron at a concentration of from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 58
Dependent Claim
31 words
The device according to claim 46 wherein said transistor is selected from the group consisting of a staggered type, a coplanner type, an inverted staggered type and an inverted coplanner type.
Claim 59
Dependent Claim
81 words
A semiconductor device comprising: a substrate having an insulating surface; at least one pixel electrode formed over said substrate; at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor comprising a crystalline semiconductor film and a channel region in said crystalline semiconductor film, wherein a total concentration of carbon, oxygen and nitrogen in said channel region is from 1×10 20 atoms/cm 3 to 20 atom %.
Claim 60
Dependent Claim
81 words
A semiconductor device comprising: a substrate having an insulating surface; at least one pixel electrode formed over said substrate; at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor comprising a crystalline semiconductor film and a channel region in said crystalline semiconductor film, wherein a total concentration of carbon, oxygen and nitrogen in said channel region is from 1×10 20 atoms/cm 3 to 20 atom %.
Claim 61
Dependent Claim
26 words
The semiconductor device according to claim 49 wherein said channel region contains boron at a concentration of from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 62
Dependent Claim
31 words
The device according to claim 49 wherein said transistor is selected from the group consisting of a staggered type, a coplanner type, an inverted staggered type and an inverted coplanner type.
Claim 63
Dependent Claim
102 words
A semiconductor device comprising: a substrate having an insulating surface; at least one pixel electrode formed over said substrate; at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor comprising a crystalline semiconductor film and a channel region in said crystalline semiconductor film; and an organic resin film formed over said switching element, wherein said pixel electrode is formed over said organic resin film, wherein a total concentration of carbon, oxygen and nitrogen in said channel region is from 1×10 20 atoms/cm 3 to 20 atom %.
Claim 64
Dependent Claim
102 words
A semiconductor device comprising: a substrate having an insulating surface; at least one pixel electrode formed over said substrate; at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor comprising a crystalline semiconductor film and a channel region in said crystalline semiconductor film; and an organic resin film formed over said switching element, wherein said pixel electrode is formed over said organic resin film, wherein a total concentration of carbon, oxygen and nitrogen in said channel region is from 1×10 20 atoms/cm 3 to 20 atom %.
Claim 65
Dependent Claim
26 words
The semiconductor device according to claim 52 wherein said channel region contains boron at a concentration of from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 66
Dependent Claim
31 words
The device according to claim 52 wherein said transistor is selected from the group consisting of a staggered type, a coplanner type, an inverted staggered type and an inverted coplanner type.
Claim 67
Dependent Claim
79 words
A semiconductor device comprising: a substrate having an insulating surface; at least one pixel electrode formed over said substrate; at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor comprising a crystalline semiconductor film including source, drain and channel regions, wherein a total concentration of carbon, oxygen and nitrogen in said source and drain regions is not higher than 7×10 19 atoms/cm 3 .
Claim 68
Dependent Claim
79 words
A semiconductor device comprising: a substrate having an insulating surface; at least one pixel electrode formed over said substrate; at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor comprising a crystalline semiconductor film including source, drain and channel regions, wherein a total concentration of carbon, oxygen and nitrogen in said source and drain regions is not higher than 7×10 19 atoms/cm 3 .
Claim 69
Dependent Claim
26 words
The semiconductor device according to claim 55 wherein said channel region contains boron at a concentration of from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 70
Dependent Claim
31 words
The device according to claim 55 wherein said transistor is selected from the group consisting of a staggered type, a coplanner type, an inverted staggered type and an inverted coplanner type.
Claim 71
Dependent Claim
95 words
A semiconductor device comprising: a substrate having an insulating surface; at least one pixel electrode formed over said substrate; at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor including source, drain and channel regions; and an organic resin film formed over said switching element, wherein said pixel electrode is formed over said organic resin film, wherein a total concentration of carbon, oxygen and nitrogen in said source and drain regions is not higher than 7×10 19 atoms/cm 3 .
Claim 72
Dependent Claim
95 words
A semiconductor device comprising: a substrate having an insulating surface; at least one pixel electrode formed over said substrate; at least one switching element having at least one thin film transistor formed over said substrate for switching said pixel electrode, said thin film transistor including source, drain and channel regions; and an organic resin film formed over said switching element, wherein said pixel electrode is formed over said organic resin film, wherein a total concentration of carbon, oxygen and nitrogen in said source and drain regions is not higher than 7×10 19 atoms/cm 3 .
Claim 73
Dependent Claim
26 words
The semiconductor device according to claim 58 wherein said channel region contains boron at a concentration of from 1×10 15 to 5×10 17 atoms/cm 3 .
Claim 74
Dependent Claim
31 words
The device according to claim 58 wherein said transistor is selected from the group consisting of a staggered type, a coplanner type, an inverted staggered type and an inverted coplanner type.
Claim 75
Dependent Claim
99 words
A semiconductor device comprising: a substrate having an insulating surface; a plurality of switching elements formed over said substrate, each of said switching elements comprising a first thin film transistor; a plurality of pixel electrodes electrically connected to said switching elements; and a driver circuit comprising at least one second thin film transistor for driving said switching elements, said second thin film transistor comprising a crystalline semiconductor film including a channel region formed over said substrate, wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film is not higher than 7×10 19 atoms/cm 3 .
Claim 76
Dependent Claim
99 words
A semiconductor device comprising: a substrate having an insulating surface; a plurality of switching elements formed over said substrate, each of said switching elements comprising a first thin film transistor; a plurality of pixel electrodes electrically connected to said switching elements; and a driver circuit comprising at least one second thin film transistor for driving said switching elements, said second thin film transistor comprising a crystalline semiconductor film including a channel region formed over said substrate, wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film is not higher than 7×10 19 atoms/cm 3 .
Claim 77
Dependent Claim
38 words
The device according to claim 61 wherein each of said first and second thin film transistors is selected from the group consisting of a staggered type, a coplanner type, an inverted staggered type and an inverted coplanner type.
Claim 78
Dependent Claim
118 words
A semiconductor device comprising: a substrate having an insulating surface; a plurality of switching elements formed over said substrate, each of said switching elements comprising a first thin film transistor; an organic resin film formed over said plurality of switching elements; and a plurality of pixel electrodes formed over said organic resin film and electrically connected to said switching elements; and a driver circuit comprising at least one second thin film transistor for driving said switching elements, said second thin film transistor comprising a crystalline semiconductor film including a channel region formed over said substrate, wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film is not higher than 7×10 19 atoms/cm 3 .
Claim 79
Dependent Claim
118 words
A semiconductor device comprising: a substrate having an insulating surface; a plurality of switching elements formed over said substrate, each of said switching elements comprising a first thin film transistor; an organic resin film formed over said plurality of switching elements; and a plurality of pixel electrodes formed over said organic resin film and electrically connected to said switching elements; and a driver circuit comprising at least one second thin film transistor for driving said switching elements, said second thin film transistor comprising a crystalline semiconductor film including a channel region formed over said substrate, wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film is not higher than 7×10 19 atoms/cm 3 .
Claim 80
Dependent Claim
38 words
The device according to claim 63 wherein each of said first and second thin film transistors is selected from the group consisting of a staggered type, a coplanner type, an inverted staggered type and an inverted coplanner type.
Claim 81
Dependent Claim
159 words
A semiconductor device comprising: a substrate having an insulating surface; a plurality of switching elements formed over said substrate, each of said switching elements comprising a first thin film transistor; an organic resin film formed over said plurality of switching elements; and a plurality of pixel electrodes formed over said organic resin film and electrically connected to said switching elements; and a driver circuit comprising at least one second thin film transistor formed over said substrate for driving said switching elements, wherein each of said first and second thin film transistors comprises a crystalline semiconductor film including a channel region, wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film of the second thin film transistor is not higher than 7×10 19 atoms/cm 3 , and wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film of the first thin film transistor is 1×10 20 atoms/cm 3 to 20 atom %.
Claim 82
Dependent Claim
159 words
A semiconductor device comprising: a substrate having an insulating surface; a plurality of switching elements formed over said substrate, each of said switching elements comprising a first thin film transistor; an organic resin film formed over said plurality of switching elements; and a plurality of pixel electrodes formed over said organic resin film and electrically connected to said switching elements; and a driver circuit comprising at least one second thin film transistor formed over said substrate for driving said switching elements, wherein each of said first and second thin film transistors comprises a crystalline semiconductor film including a channel region, wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film of the second thin film transistor is not higher than 7×10 19 atoms/cm 3 , and wherein a total concentration of carbon, oxygen and nitrogen in said crystalline semiconductor film of the first thin film transistor is 1×10 20 atoms/cm 3 to 20 atom %.
Claim 83
Dependent Claim
38 words
The device according to claim 65 wherein each of said first and second thin film transistors is selected from the group consisting of a staggered type, a coplanner type, an inverted staggered type and an inverted coplanner type.
References Cited (Backward Citations)
US2819191A
Cited
US4068020A
Cited
US4103297A
Cited
US4395726A
Cited
US4239346A
Cited
US4363828A
Cited
US4378417A
Cited
US4581620A
Cited
US4365013A
Cited
US4470060A
Cited
US5082351A
Cited
US4460670A
Cited
US4500388A
Cited
US4565584A
Cited
US4969031A
Cited
US4680580A
Cited
US4814842A
Cited
US4766477A
Cited
US4591892A
Cited
US4690717A
Cited
US4740829A
Cited
US5077223A
Cited
US5349204A
Cited
US4581476A
Cited
US4862237A
Cited
US4860069A
Cited
US4584025A
Cited
US4651408A
Cited
US4697887A
Cited
EP0161555A2
Cited
US4959700A
Cited
US5315132A
Cited
US4621276A
Cited
US4818077A
Cited
US4693759A
Cited
US4659392A
Cited
US5043772A
Cited
US4795679A
Cited
US4986213A
Cited
US4888305A
Cited
US4597160A
Cited
US4864376A
Cited
US4772927A
Cited
US4755865A
Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-08-27 | 2005-02-26 | 2005-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-08-27 | 2009-02-26 | 2009-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-08-27 | 2013-02-26 | 2013-08-28 | $7700.00 | Window Closed / Lapsed |