Zone-melting recrystallization process

Claim 1

A method of zone melting and recystallization of polysilicon film formed on an insulator over a silicon substrate comprising the steps of: a. forming a protective capping layer over the polysilicon film with a capping material; b. forming periodic strips in, or on, said capping layer of material having a melting point above that of silicon and capable of being etched; c. zone melting and recrystallizing said polysilicon film to transform said polysilicon film to single crystal, or nearly single crystalline silicon structure with crystal defects primarily located beneath the strips; d. forming openings at said strips to expose the underlying transformed silicon structure; e. amorphizing the exposed underlying silicon structure leaving single crystal or nearly single crystalline material laterally adjacent the amorphized silicon structure; f. laterally regrowing said amorphized structure seeded by the single crystal, or nearly single material laterally adjacent thereto.

Claim 2

A method of zone melting and recystallization of polysilicon film formed on an insulator over a silicon substrate comprising the steps of: a. forming a protective capping layer over the polysilicon film with a capping material; b. forming periodic strips in, or on, said capping layer of material having a melting point above that of silicon and capable of being etched; c. zone melting and recrystallizing said polysilicon film to transform said polysilicon film to single crystal, or nearly single crystalline silicon structure with crystal defects primarily located beneath the strips; d. forming openings at said strips to expose the underlying transformed silicon structure; e. amorphizing the exposed underlying silicon structure leaving single crystal or nearly single crystalline material laterally adjacent the amorphized silicon structure; f. laterally regrowing said amorphized structure seeded by the single crystal, or nearly single material laterally adjacent thereto.