Patent DE1017252B successfully refreshed from Google Patents.
US4545823A
Expired / Lapsed
US
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Grain boundary confinement in silicon-on-insulator films
Assignee: HP Inc
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Filing: 1983-11-14
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Granted: 1985-10-08
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Expires: 2003-11-14
Abstract
Abstract Regular arrays of grain boundary free silicon islands have been produced in a silicon on insulator (SOI) structure by using a pattern antirelfective coating in combination with a laser scanning technique. The antireflective coating pattern is made up of a series of parallel stripes terminating in seeding windows. A laser beam is scanned perpendicular to the stripes and over at least two stripes simultaneously, with the long axis of the beam parallel to the scan direction. Grain boundaries are confined to the region under the antireflective stripes.
Inventors
- 👤 Clifford I. Drowley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:24
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/381; H10P14/382; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
96 words
In a method for making single crystal silicon islands, the steps comprising: forming a first insulating layer over portions of a substrate; forming a polysilicon layer over said substrate and said first insulating layer; forming an array of antireflective stripes each having a long axis over said polysilicon layer; forming a second insulating layer over a region between said antireflective stripes; forming an inorganic layer over said second insulating layer; and scanning a laser beam perpendicular to said long axis over at least two antireflective stripes simultaneously to form single crystal silicon between said antireflective stripes.
Claim 2
Dependent Claim
96 words
In a method for making single crystal silicon islands, the steps comprising: forming a first insulating layer over portions of a substrate; forming a polysilicon layer over said substrate and said first insulating layer; forming an array of antireflective stripes each having a long axis over said polysilicon layer; forming a second insulating layer over a region between said antireflective stripes; forming an inorganic layer over said second insulating layer; and scanning a laser beam perpendicular to said long axis over at least two antireflective stripes simultaneously to form single crystal silicon between said antireflective stripes.
Claim 3
Dependent Claim
14 words
A method as in claim 1 wherein said first insulating layer comprises silicon dioxide.
Claim 4
Dependent Claim
13 words
A method as in claim 2 wherein said antireflective stripe comprises silicon nitride.
Claim 5
Dependent Claim
14 words
A method as in claim 3 wherein said antireflective stripe further comprises silicon dioxide.
Claim 6
Dependent Claim
14 words
A method as in claim 4 wherein said second insulating layer comprises silicon dioxide.
Claim 7
Dependent Claim
13 words
A method as in claim 5 wherein said inorganic layer comprises silicon nitride.
Claim 8
Dependent Claim
14 words
A method as in claim 3 wherein said second insulating layer comprises silicon dioxide.
Claim 9
Dependent Claim
13 words
A method as in claim 7 wherein said inorganic layer comprises silicon nitride.
Claim 10
Dependent Claim
13 words
A method as in claim 2 wherein said antireflective stripe comprises silicon dioxide.
Claim 11
Dependent Claim
14 words
A method as in claim 9 wherein said second insulating layer comprises silicon dioxide.
Claim 12
Dependent Claim
13 words
A method as in claim 10 wherein said inorganic layer comprises silicon nitride.
Claim 13
Dependent Claim
14 words
A method as in claim 1 wherein said laser beam has an elliptical cross-section.
Claim 14
Dependent Claim
115 words
In a method for making single crystal silicon islands, the steps comprising: forming a first insulating layer over portions of a substrate; forming a polysilicon layer, a first portion of said polysilicon layer being over said substrate and a second portion of said polysilicon layer being over said first insulating layer; forming a layer of antireflective material over said first and second portion of said polysilicon layer so that over said second portion of said polysilicon layer there is an array of antireflective stripes each having a long axis; and, scanning a laser beam perpendicular to said long axis over at least two antireflective stripes simultaneously to form single crystal silicon between said antireflective stripes.
Claim 15
Dependent Claim
115 words
In a method for making single crystal silicon islands, the steps comprising: forming a first insulating layer over portions of a substrate; forming a polysilicon layer, a first portion of said polysilicon layer being over said substrate and a second portion of said polysilicon layer being over said first insulating layer; forming a layer of antireflective material over said first and second portion of said polysilicon layer so that over said second portion of said polysilicon layer there is an array of antireflective stripes each having a long axis; and, scanning a laser beam perpendicular to said long axis over at least two antireflective stripes simultaneously to form single crystal silicon between said antireflective stripes.
Claim 16
Dependent Claim
14 words
A method as in claim 13 wherein said laser beam has an elliptical cross-section.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-10-07 | 1989-04-08 | 1989-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-10-07 | 1993-04-08 | 1993-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-10-07 | 1997-04-08 | 1997-10-08 | $7700.00 | Window Closed / Lapsed |