US4431459A
Expired / Lapsed
US
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Fabrication of MOSFETs by laser annealing through anti-reflective coating
Assignee: National Semiconductor Corp
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Filing: 1981-07-17
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Granted: 1984-02-14
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Expires: 2001-07-17
Abstract
Abstract A method of annealing an ion implanted semiconductor device using an antireflective dielectric coating on the device for maximizing the coupling of photon radiation into the device. An IGFET device made in accordance with the method, is shown.
Inventors
- 👤 Tzu-Chan Teng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:27
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S148/00; Y10S148/091
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
56 words
A method of annealing a semiconductor MOSFET device in which ions are implanted in the source and drain regions to create localized pn junctions comprising the steps of: depositing an antireflective dielectric coating on said MOSFET device; and irradiating said device with photons at a power level below that at which said junctions will be damaged.
Claim 2
Independent Claim
56 words
A method of annealing a semiconductor MOSFET device in which ions are implanted in the source and drain regions to create localized pn junctions comprising the steps of: depositing an antireflective dielectric coating on said MOSFET device; and irradiating said device with photons at a power level below that at which said junctions will be damaged.
Claim 3
Dependent Claim
24 words
A method according to claim 1, wherein said step of depositing comprises the step of thermally growing said antireflective dielectric coating on said device.
Claim 4
Dependent Claim
21 words
A method according to claim 1, wherein said step of depositing comprises the step of using a chemical vapor deposition technique.
Claim 5
Dependent Claim
30 words
A method according to claim 1, wherein said step of depositing comprises the step of using a plasma activated chemical vapor reaction process for depositing said coating on said device.
Claim 6
Dependent Claim
21 words
A method according to claim 1, wherein said step of depositing comprises the step of sputtering said coating on said device.
Claim 7
Dependent Claim
38 words
A method according to claim 1, wherein said step of depositing comprises the step of depositing a coating having a thickness of approximately (2n+1)λ/4, where λ is the wave length of said photons and n is an integer.
Claim 8
Dependent Claim
30 words
A method according to claim 1, wherein said device comprises a substrate and said step of depositing comprises the step of depositing a coating comprising a compound of said substrate.
Claim 9
Dependent Claim
17 words
A method according to claim 7, wherein said substrate comprises silicon and said compound comprises silicon dioxide.
Claim 10
Dependent Claim
17 words
A method according to claim 7, wherein said substrate comprises silicon and said compound comprises silicon nitride.
Claim 11
Dependent Claim
22 words
A method according to claim 1, wherein said step of irradiating comprises the step of irradiating said device with coherent photon radiation.
Claim 12
Dependent Claim
14 words
A method according to claim 10, wherein said coherent photon radiation is laser radiation.
Claim 13
Dependent Claim
14 words
A method according to claim 11, wherein said laser radiation is argon laser radiation.
Claim 14
Dependent Claim
17 words
A method according to claim 12, wherein said argon laser radiation is continuous wave argon laser radiation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-13 | 1987-08-15 | 1988-02-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-13 | 1991-08-15 | 1992-02-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-13 | 1995-08-15 | 1996-02-14 | $7700.00 | Window Closed / Lapsed |