US5055899A
Expired / Lapsed
US
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Thin film transistor
Assignee: Casio Computer Co Ltd
•
Filing: 1990-04-02
•
Granted: 1991-10-08
•
Expires: 2010-04-02
Abstract
Abstract A thin film transistor comprising a gate electrode, a gate insulating film, and a semiconductor layer, which have the same shape and the same size and stacked one upon another. The transistor further comprises an n-type semiconductor layer formed on the semiconductor layer, an ohmic electrode formed on the n-type semiconductor layer, and a source electrode and a drain electrode both formed on the ohmic electrode. Further, a transparent electrode is electrically connected to the source electrode. The thin film transistor has no step portions. Therefore, the transistor can be manufactured with high yield, and forms a pixel having a high opening ratio.
Inventors
- 👤 Haruo Wakai
- 👤 Nobuyuki Yamamura
- 👤 Syunichi Sato
- 👤 Minoru Kanbara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 00:42
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6757; H10D30/6729; H10D30/674; H10D86/00; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/133357; G02F1/136; G02F1/13606; G02F1/1362; G02F1/136209; G02F1/136227; G02F1/1368
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
164 words
A thin film transistor comprising: a substrate; a gate electrode formed on said substrate and having a peripheral portion which is electrically insulative; a gate insulating film and a first semiconductor layer, sequentially stacked on said gate electrode, with side edge surfaces of said gate electrode, gate insulating film and first semiconductor layer all being aligned with each other to constitute two vertically-extending side edge surfaces of said gate electrode, gate insulating film and first semiconductor layer; two second semiconductor layers, formed on said first semiconductor layer so as to be separate from each other, with one edge surface of each of said second semiconductor layers being coplanar with one of said vertically-extending side edge surfaces; a source electrode formed over one of said second semiconductor layers; a drain electrode formed over the other of said second semiconductor layers; a transparent electrode electrically connected to said source electrode; and an insulating film electrically insulating said gate electrode and said transparent electrode from each other.
Claim 2
Dependent Claim
164 words
A thin film transistor comprising: a substrate; a gate electrode formed on said substrate and having a peripheral portion which is electrically insulative; a gate insulating film and a first semiconductor layer, sequentially stacked on said gate electrode, with side edge surfaces of said gate electrode, gate insulating film and first semiconductor layer all being aligned with each other to constitute two vertically-extending side edge surfaces of said gate electrode, gate insulating film and first semiconductor layer; two second semiconductor layers, formed on said first semiconductor layer so as to be separate from each other, with one edge surface of each of said second semiconductor layers being coplanar with one of said vertically-extending side edge surfaces; a source electrode formed over one of said second semiconductor layers; a drain electrode formed over the other of said second semiconductor layers; a transparent electrode electrically connected to said source electrode; and an insulating film electrically insulating said gate electrode and said transparent electrode from each other.
Claim 3
Dependent Claim
23 words
The thin film transistor according to claim 1, wherein said source electrode is formed directly on said one of said second semiconductor layers.
Claim 4
Dependent Claim
23 words
The thin film transistor according to claim 2, wherein said drain electrode is formed directly on said other of said second semiconductor layers.
Claim 5
Dependent Claim
23 words
The thin film transistor according to claim 1, wherein said drain electrode is formed directly on said other of said second semiconductor layers.
Claim 6
Dependent Claim
31 words
The thin film transistor according to claim 1, wherein said first semiconductor layer is made of amorphous silicon, and said second semiconductor layers are n-type semiconductor layers doped with an impurity.
Claim 7
Dependent Claim
19 words
The thin film transistor according to claim 5, wherein said n-type semiconductor layers are made of n-type amorphous silicon.
Claim 8
Dependent Claim
16 words
The thin film transistor according to claim 1, wherein said transparent electrode is a pixel electrode.
Claim 9
Dependent Claim
20 words
The thin film transistor according to claim 1, wherein the peripheral portion of said gate electrode is an oxidized portion.
Claim 10
Dependent Claim
28 words
The thin film transistor according to claim 1, wherein said gate electrode is made of aluminum, and the peripheral portion of said gate electrode is made of alumina.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-07 | 1995-04-08 | 1995-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-07 | 1999-04-08 | 1999-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-07 | 2003-04-08 | 2003-10-08 | $7700.00 | Window Closed / Lapsed |