Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
165 words
A thin-film transistor matrix, comprising: a plurality of thin-film transistors formed on a dielectric substrate and arranged in rows and columns to form a matrix array, each of the transistor comprising a control electrode, an insulation film formed on the control electrode, a semiconductor film formed on the insulation film, a first main electrode formed on the semiconductor a second main electrode formed on the semiconductor film, the matrix further comprising a plurality of display electrodes provided in association with respective thin-film transistors and adjacent thereto row interconnection layers provided for the respective rows and interconnecting the control electrodes of the transistors of the respective rows, and column interconnection layers provided for the respective columns and interconnecting the first main electrodes in the respective columns, wherein the insulation film and the semiconductor film are formed in each of the regions where the transistor is formed and in each of the regions where the column interconnection layer is formed, and do not cover the display electrodes.
Claim 2
Dependent Claim
165 words
A thin-film transistor matrix, comprising: a plurality of thin-film transistors formed on a dielectric substrate and arranged in rows and columns to form a matrix array, each of the transistor comprising a control electrode, an insulation film formed on the control electrode, a semiconductor film formed on the insulation film, a first main electrode formed on the semiconductor a second main electrode formed on the semiconductor film, the matrix further comprising a plurality of display electrodes provided in association with respective thin-film transistors and adjacent thereto row interconnection layers provided for the respective rows and interconnecting the control electrodes of the transistors of the respective rows, and column interconnection layers provided for the respective columns and interconnecting the first main electrodes in the respective columns, wherein the insulation film and the semiconductor film are formed in each of the regions where the transistor is formed and in each of the regions where the column interconnection layer is formed, and do not cover the display electrodes.
Claim 3
Dependent Claim
23 words
The thin-film transistor matrix according to claim 1, wherein the insulation film is formed to cover the control electrodes and row interconnection layers.
Claim 4
Dependent Claim
22 words
The thin-film transistor matrix according to claim 1, wherein the insulation film and the semiconductor film are substantially continuous throughout each column.
Claim 5
Dependent Claim
29 words
The thin-film transistor matrix according to claim 1, wherein the control electrodes are formed of the same material and during the same process step as the row interconnection layers.
Claim 6
Dependent Claim
33 words
The thin-film transistor matrix according to claim 1, wherein the first main electrodes are continuous with and formed of the same material and during the same process step as the column interconnection layers.
Claim 7
Dependent Claim
35 words
The thin-film transistor matrix according to claim 1, wherein the column interconnection layers extend throughout the respective columns and parts of the column interconnection layers that are within the regions of the first main electrodes.
Claim 8
Dependent Claim
20 words
The thin-film transistor matrix according to claim 1, wherein the second main electrodes are connected to the respective display electrodes.
Claim 9
Dependent Claim
34 words
The thin-film transistor matrix according to claim 7, wherein each of the display electrodes is formed in a substantially rectangular region defined by two adjacent column interconnection layers and two adjacent row interconnection layers.
Claim 10
Dependent Claim
38 words
The thin-film transistor according to claim 1, wherein the semiconductor film on which the first main electrode is formed has a surface which receives the first main electrode and which is substantially planar and free from vertical steps.