Thin film semiconductor device

Abstract

Abstract PURPOSE:To obtain a thin film semiconductor device such as an active matrix panel for transmission type liquid crystal display device, which completely shields light and has a large rate of opening, by a method wherein the shielding against light from the back surface of the substrate is performed using the signal conductor or the control wire. CONSTITUTION:A Cr wiring 16 (plays the role of light-shielding, too) and an insulating film 17 of a polyimide resin and so forth are formed on a glass substrate 15, and a Cr gate electrode 18 and a control wire are formed. ITO is deposited and an indicating electrode 19 is formed by performing an etching. An Si3N4 film 20 as a gate insulating film, an amorphous silicon I type layer 21 and amorphous silicon N type layers 22 are deposited. Cr layers 23 and Al layers 24, which are turned into upper metal films, are deposited. The signal conductor 16 and a source electrode 25 are brought into contact and a drain electrode 26 is brought into contact with the ITO transparent electrode 19. An Si3N14 film is deposited as a passivation film 27 and Al is evaporated to form a light-shielding film 28.

Inventors

• 👤 Koichi Seki
• 👤 浩一 関
• 👤 Akira Sasano
• 👤 笹野　晃
• 👤 Ken Tsutsui
• 👤 謙 筒井

Bibliographic Details