US5084905A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film transistor panel and manufacturing method thereof
Assignee: Casio Computer Co Ltd
•
Filing: 1989-10-02
•
Granted: 1992-01-28
•
Expires: 2009-10-02
Abstract
Abstract A thin film transistor panel has a substrate on which a plurality of electrode lines are aligned in a matrix form, thin film transistors which are formed on crossing portions of the plurality of the electrode lines, a diffusible insulating film for covering said thin film transistors, and metal-diffused layers and are connected to source electrodes. The metal-diffused layers are formed by diffusing a metal into predetermined areas of said insulating film. If the metal-diffused layers are used as the pixel electrodes, high density display can be obtained due to the fine pixel electrodes. In addition, a manufacturing method of thin film transistor panel having the steps of forming gate electrode on a substrate, forming gate insulating films on the gate electrodes, forming semiconductor layers on said gate insulating films, forming source and drain electrodes on said semiconductor layers except for channel portions, forming a diffusible insulating film which covers the whole surface of the substrate, providing contact holes in said insulating film corresponding to said source electrodes, and forming metal-diffused layers by diffusing a metal into the insulating film and inner surfaces of said contact holes. The metal-diffused areas can be formed in high pattern accuracy, and the fine pixel electrodes can be easily obtained if the metal-diffused areas are used as the pixel electrodes.
Inventors
- 👤 Makoto Sasaki
- 👤 Syunichi Sato
- 👤 Hisatoshi Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 13:35
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136227; H; H10; H10D; H10D86/00; G02F1/1333; G02F1/1343; G02F1/13439
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
191 words
A thin film transistor panel comprising: a transparent substrate; a plurality of mutually-insulated electrode lines arranged on the substrate and extending in row and column directions; a plurality of thin film transistors, with each being arranged on a part of the substrate which is in the vicinity of an intersection between given two electrode lines of said plurality of electrode lines, each thin film transistor of said plurality of thin film transistors having a gate electrode which is connected to one of said given two electrode lines, and drain and source electrodes one of which is connected to the other of said given two electrode lines; a transparent diffusible insulating film above the substrate and covering said plurality of thin film transistors; and metal-diffused layers which are transparent and conductive, and which include portions of said transparent diffusible insulating film and a metal diffused in said portions of said transparent diffusible insulating film, said metal-diffused layers being located in predetermined regions in correspondence with said plurality of thin film transistors, respectively, and being electrically connected to the other of said drain and source electrodes of the plurality of thin film transistors.
Claim 2
Dependent Claim
191 words
A thin film transistor panel comprising: a transparent substrate; a plurality of mutually-insulated electrode lines arranged on the substrate and extending in row and column directions; a plurality of thin film transistors, with each being arranged on a part of the substrate which is in the vicinity of an intersection between given two electrode lines of said plurality of electrode lines, each thin film transistor of said plurality of thin film transistors having a gate electrode which is connected to one of said given two electrode lines, and drain and source electrodes one of which is connected to the other of said given two electrode lines; a transparent diffusible insulating film above the substrate and covering said plurality of thin film transistors; and metal-diffused layers which are transparent and conductive, and which include portions of said transparent diffusible insulating film and a metal diffused in said portions of said transparent diffusible insulating film, said metal-diffused layers being located in predetermined regions in correspondence with said plurality of thin film transistors, respectively, and being electrically connected to the other of said drain and source electrodes of the plurality of thin film transistors.
Claim 3
Dependent Claim
16 words
A thin film transistor panel according to claim 1, wherein said metal-diffused layers form pixel electrodes.
Claim 4
Dependent Claim
16 words
A thin film transistor panel according to claim 1, wherein said insulating film comprises SOG film.
Claim 5
Dependent Claim
23 words
A thin film transistor panel according to claim 1, wherein said metal-diffused layers are at surface regions of said transparent diffusible insulating film.
Claim 6
Dependent Claim
24 words
A thin film transistor panel according to claim 1, wherein said metal-diffused layers occupy substantially the entire thickness of the transparent diffusible insulating film.
Claim 7
Dependent Claim
60 words
A thin film transistor panel according to claim 1, wherein said transparent diffusible insulating film has the plurality of contact holes respectively positioned corresponding to said other of the drain and source electrodes of said plurality of thin film transistors, said other of the drain and source electrodes and said metal-diffused layers being electrically connected together through said contact holes.
Claim 8
Dependent Claim
65 words
A thin film transistor panel according to claim 1, wherein said transparent diffusible insulating film has a plurality of contact holes respectively positioned corresponding to at least one of the gate, drain and source electrodes of the plurality of thin film transistors, the at least one of the gate, drain and source electrodes and said metal-diffused layers being electrically connected together through said contact holes.
Claim 9
Dependent Claim
34 words
A thin film transistor panel according to claim 7, wherein said contact holes are formed on said source electrodes of said thin film transistors, and said metal-diffused layers are connected to said source electrodes.
Claim 10
Dependent Claim
33 words
A thin film transistor panel according to claim 7, wherein each of the metal-diffused layers is formed in the surface areas of said insulating film and the inner surfaces of said contact holes.
Claim 11
Dependent Claim
16 words
A thin film transistor panel according to claim 7, wherein said contact holes are bottomed holes.
Claim 12
Dependent Claim
16 words
A thin film transistor panel according to claim 7, wherein said contact holes are through holes.
Claim 13
Dependent Claim
83 words
A thin film transistor panel according to claim 7, further comprising: a diffusion-preventive film on those portions of the transparent diffusible insulating film which are other than said predetermined regions of the metal-diffused layers, for preventing diffusion of said metal; wirings on the diffusion preventive film and the metal-diffused layers arranged in a predetermined pattern and overlapping with said contact holes; and connecting means, located within the contact holes, for connecting the wiring with the electrodes of the plurality of thin film transistors.
Claim 14
Dependent Claim
20 words
A thin film transistor panel according to claim 12, wherein said connecting means includes the same metal as said wirings.
Claim 15
Dependent Claim
30 words
A thin film transistor panel according to claim 12, wherein said contact holes are formed correspondingly to two electrodes among gate, source and drain electrodes of said thin film transistors.
Claim 16
Dependent Claim
171 words
A thin film transistor panel comprising: a transparent substrate; a plurality of mutually-insulated electrode lines arranged on the substrate and extending in row and column directions; a plurality of thin film transistors, with each being arranged above that part of the substrate which is in the vicinity of an intersection between given two electrode lines of said plurality of electrode lines, each thin film transistor of said plurality of thin film transistors having a gate electrode which is connected to one of said given two electrode lines, and drain and source electrodes one of which is connected to the other of said given two electrode lines; a transparent diffusible insulating film on said substrate; and metal-diffused layers which are transparent and conductive, and which include portions of said transparent diffusible insulating film being located in correspondence to the plurality of thin film transistors, respectively, and a metal diffused in said portions, and being electrically connected to the other of said drain and source electrodes of the plurality of thin film transistors.
Claim 17
Dependent Claim
171 words
A thin film transistor panel comprising: a transparent substrate; a plurality of mutually-insulated electrode lines arranged on the substrate and extending in row and column directions; a plurality of thin film transistors, with each being arranged above that part of the substrate which is in the vicinity of an intersection between given two electrode lines of said plurality of electrode lines, each thin film transistor of said plurality of thin film transistors having a gate electrode which is connected to one of said given two electrode lines, and drain and source electrodes one of which is connected to the other of said given two electrode lines; a transparent diffusible insulating film on said substrate; and metal-diffused layers which are transparent and conductive, and which include portions of said transparent diffusible insulating film being located in correspondence to the plurality of thin film transistors, respectively, and a metal diffused in said portions, and being electrically connected to the other of said drain and source electrodes of the plurality of thin film transistors.
Claim 18
Dependent Claim
16 words
A thin film transistor panel according to claim 15, wherein said metal-diffused layers form pixel electrodes.
Claim 19
Dependent Claim
18 words
A thin film transistor panel according to claim 15, wherein said insulating film is made of SOG film.
Claim 20
Dependent Claim
53 words
A thin film transistor panel according to claim 15, wherein said plurality of thin film transistors are on the substrate, and said transparent diffusible insulating film is on those substrate portions which are other than regions where one of the gate, drain and source electrodes which is formed on the substrate is located.
Claim 21
Dependent Claim
38 words
A thin film transistor panel according to claim 15, wherein said transparent diffusible insulating film is substantially on the entire area of said substrate, and said plurality of thin film transistors are on the transparent diffusible insulating film.
Claim 22
Dependent Claim
258 words
An active matrix liquid crystal display device having a thin film transistor panel comprising: a transparent substrate; a plurality of mutually-insulated electrode lines arranged on the substrate and extending in row and column directions; a plurality of thin film transistors, with each being arranged on a part of the substrate which is in the vicinity of an intersection between given two electrode lines of said plurality of electrode lines, each thin film transistor of said plurality of thin film transistors having a gate electrode which is connected to one of said given two electrode lines, and drain and source electrodes one of which is connected to the other of said given two electrode lines; a transparent diffusible insulating film above the substrate and covering said plurality of thin film transistors; metal-diffused layers which are transparent and conductive, and which include portions of the transparent diffusible insulating film being located in correspondence to the thin film transistors, respectively, and a metal diffused in said portions, and being electrically connected to the other of said drain and source electrodes of the plurality of thin film transistors; an opposite substrate which opposes said substrate, with a predetermined gap therebetween; at least one opposite electrode formed on that surface of said opposite substrate which opposes said substrate and arranged to face the metal-diffused layers; and a liquid crystal sealed between said substrate and said opposite substrate and having an optical characteristic which is variable in accordance with an electric field generated between the metal-diffused layer and the at least one opposite electrode.
Claim 23
Dependent Claim
258 words
An active matrix liquid crystal display device having a thin film transistor panel comprising: a transparent substrate; a plurality of mutually-insulated electrode lines arranged on the substrate and extending in row and column directions; a plurality of thin film transistors, with each being arranged on a part of the substrate which is in the vicinity of an intersection between given two electrode lines of said plurality of electrode lines, each thin film transistor of said plurality of thin film transistors having a gate electrode which is connected to one of said given two electrode lines, and drain and source electrodes one of which is connected to the other of said given two electrode lines; a transparent diffusible insulating film above the substrate and covering said plurality of thin film transistors; metal-diffused layers which are transparent and conductive, and which include portions of the transparent diffusible insulating film being located in correspondence to the thin film transistors, respectively, and a metal diffused in said portions, and being electrically connected to the other of said drain and source electrodes of the plurality of thin film transistors; an opposite substrate which opposes said substrate, with a predetermined gap therebetween; at least one opposite electrode formed on that surface of said opposite substrate which opposes said substrate and arranged to face the metal-diffused layers; and a liquid crystal sealed between said substrate and said opposite substrate and having an optical characteristic which is variable in accordance with an electric field generated between the metal-diffused layer and the at least one opposite electrode.
Claim 24
Dependent Claim
18 words
A thin film transistor panel display device according to claim 20, wherein said metal-diffused layers form pixel electrodes.
Claim 25
Dependent Claim
23 words
A thin film transistor panel display device according to claim 20, wherein said substrate, said insulating film and said metal-diffused layers are transparent.
References Cited (Backward Citations)
US3765747A
Cited
US3840695A
Cited
US3862360A
Cited
US4683442A
Cited
US4748490A
Cited
US4899205A
Cited
US4821092A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |