US4591892A
Expired / Lapsed
US
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Semiconductor photoelectric conversion device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1983-08-22
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Granted: 1986-05-27
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Expires: 2003-08-22
Abstract
Abstract A semiconductor photoelectric conversion device has a conductive substrate or a first conductive layer formed on a suitable substrate, a non-single-crystal semiconductor laminate member formed on the conductive substrate or first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction, and a second conductive layer formed on the non-single-crystal semiconductor laminate member. The I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen, carbon or phosphorus only in such a low concentration as 5×10 18 atoms/cm 3 or less, 4×10 18 atoms/cm 3 or less, or 5×10 15 atoms/cm 3 or less, respectively.
Inventors
- 👤 Shumpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:22
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
95 words
A semiconductor photoelectric conversion device comprising: (a) a conductive substrate or (b) a first conductive layer formed on a further substrate; a non-single-crystal semiconductor laminate member formed on said conductive substrate or said first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction; and a second conductive layer formed on said non-single-crystal semiconductor laminate member; wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 2
Dependent Claim
95 words
A semiconductor photoelectric conversion device comprising: (a) a conductive substrate or (b) a first conductive layer formed on a further substrate; a non-single-crystal semiconductor laminate member formed on said conductive substrate or said first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction; and a second conductive layer formed on said non-single-crystal semiconductor laminate member; wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 3
Dependent Claim
96 words
A semiconductor photoelectric conversion device comprising: (a) a conductive substrate or (b) a first conductive layer formed on a further substrate; a non-single-crystal semiconductor laminate member formed on said conductive substrate or said first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction; and a second conductive layer formed on said non-single-crystal semiconductor laminate member; wherein the I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains carbon in a low concentration if only 4×10 18 atoms /cm 3 or less.
Claim 4
Dependent Claim
96 words
A semiconductor photoelectric conversion device comprising: (a) a conductive substrate or (b) a first conductive layer formed on a further substrate; a non-single-crystal semiconductor laminate member formed on said conductive substrate or said first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction; and a second conductive layer formed on said non-single-crystal semiconductor laminate member; wherein the I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains carbon in a low concentration if only 4×10 18 atoms /cm 3 or less.
Claim 5
Dependent Claim
95 words
A semiconductor photoelectric conversion device comprising: (a) a conductive substrate or (b) a first conductive layer formed on a further substrate; a non-single-crystal semiconductor laminate member formed on said conductive substrate or said first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least on PI, NI, PIN or NIP junction; and a second conductive layer formed on said non-single-crystal semiconductor laminate member; wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains phosphorus in a low concentration of only 5×10 15 atoms/cm 3 or less.
Claim 6
Dependent Claim
95 words
A semiconductor photoelectric conversion device comprising: (a) a conductive substrate or (b) a first conductive layer formed on a further substrate; a non-single-crystal semiconductor laminate member formed on said conductive substrate or said first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least on PI, NI, PIN or NIP junction; and a second conductive layer formed on said non-single-crystal semiconductor laminate member; wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains phosphorus in a low concentration of only 5×10 15 atoms/cm 3 or less.
Claim 7
Dependent Claim
35 words
A semiconductor photoelectric conversion device according to claim 1, 2, or 3, wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member is formed of silicon, germanium or Si x Ge 1-x (0<x<1).
Claim 8
Dependent Claim
31 words
A semiconductor photoelectric conversion device according to claim 4, wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains hydrogen or a halogen as a recombination center neutralizer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-26 | 1989-11-25 | 1990-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-26 | 1993-11-25 | 1994-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-26 | 1997-11-25 | 1998-05-27 | $7700.00 | Window Closed / Lapsed |