Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions

Claim 2

A diode comprising: an insulating substrate; a first control electrode provided on said insulating substrate; a first insulating layer provided on said first control electrode; a semiconductor layer extending beyond an area over said first control electrode on said insulating substrate, said semiconductor layer comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a conductivity type opposite to the first conductivity type, and a third semiconductor region formed of one of an intrinsic region and an impurity region which has an impurity concentration lower than impurity concentrations of said first and second semiconductor regions, said third semiconductor region being arranged to oppose said first control electrode; a second insulating layer formed at least on said third semiconductor region; and a second control electrode arranged correspondingly to said third semiconductor region and separated from said third semiconductor region by said second insulating layer, said third semiconductor region being sandwiched between said first and second control electrodes, wherein said first and second semiconductor regions are each adjacent to said third semiconductor region, said first and second semiconductor regions each having an impurity concentration not less than 10 19 cm -3 , said third semiconductor region having an impurity concentration not greater than 10 14 cm -3 , and said semiconductor layer having a thickness less than a maximum thickness of a depletion region, so that in said first and second semiconductor regions, (a) the depletion region extends to said third semiconductor region at a floating state of said second control electrode, and (b) the depletion region extends into a whole of said third semiconductor region at a driving state of said second control electrode.

Claim 3

A diode according to claim 1, wherein said first semiconductor region and said second semiconductor region include an impurity of a high concentration within a range having an upper limit of an order of 10 20 cm -3 for controlling conductivity type, in order to form an ohmic contact to electrodes connected to said first and second semiconductor regions.

Claim 4

A diode according to claim 1, wherein said insulating substrate has at least an insulating surface.

Claim 5

A diode according to claim 1, wherein the impurity included in said first semiconductor region for controlling the conductivity type is, at least, one atom selected from the group consisting of periodic table element groups III and V.

Claim 6

A diode according to claim 1, wherein said first, second and third semiconductor regions each comprise monocrystalline silicon.

Claim 7

A diode according to claim 1, wherein the impurity included in said second semiconductor region for controlling the conductivity type therein is, at least, one element selected from groups III and V of the periodic table.

Claim 8

A diode according to claim 1, wherein the impurity included in said third semiconductor region is, at least, one element selected from groups III and V of the periodic table.

Claim 9

A diode according to claim 1, wherein the impurity included in said first semiconductor region for controlling the conductivity therein is at least one element selected from groups III and V of the periodic table, and the impurity included in said third semiconductor region is the same element included in said first semiconductor region and selected from the groups III and V.

Claim 10

A diode according to claim 1, wherein the impurity included in said second semiconductor region for controlling the conductivity therein is at least one element selected from groups III and V of the periodic table, and the impurity included in said third semiconductor region is the same element included in said second semiconductor region selected from groups III and V.

Claim 11

A diode according to claim 1, wherein the impurity included in said first semiconductor region for controlling the conductivity type therein is at least one element selected from groups III and V of the periodic table, and the impurity included in said second semiconductor region for controlling the conductivity type therein is at least one element selected from a group different from groups III and V.

Claim 12

A semiconductor device comprising a MOS transistor and a diode on a common insulating substrate, said diode comprising: a first control electrode provided on said common insulating substrate; an first insulating layer provided on said first control electrode; a semiconductor layer extending beyond an area over said first control electrode on said insulating substrate, said semiconductor layer comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a conductivity type opposite to the first conductivity type, and a third semiconductor region formed of one of an intrinsic region and an impurity region which has an impurity concentration lower than impurity concentrations of said first and second semiconductor regions, said third semiconductor region being arranged to oppose said first control electrode; a second insulating layer formed at least on said third semiconductor region; and a second control electrode arranged correspondingly to said third semiconductor region and separated from said third semiconductor region by said second insulating layer, said third semiconductor region being sandwiched between said first and second control electrodes, wherein said first and second semiconductor regions are each adjacent to said third semiconductor region, said first and second semiconductor regions each having an impurity concentration not less than 10 19 cm -3 , said third semiconductor region having an impurity concentration not greater than 10 14 cm -3 , and said semiconductor layer having a thickness less than a maximum thickness of a depletion region, so that in said first and second semiconductor regions, (a) the depletion region extends to said third semiconductor region at a floating state of said second control electrode, and (b) the depletion region extends into a whole of said third semiconductor region at a driving state of said second control electrode.

Claim 13

A semiconductor device comprising a MOS transistor and a diode on a common insulating substrate, said diode comprising: a first control electrode provided on said common insulating substrate; an first insulating layer provided on said first control electrode; a semiconductor layer extending beyond an area over said first control electrode on said insulating substrate, said semiconductor layer comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a conductivity type opposite to the first conductivity type, and a third semiconductor region formed of one of an intrinsic region and an impurity region which has an impurity concentration lower than impurity concentrations of said first and second semiconductor regions, said third semiconductor region being arranged to oppose said first control electrode; a second insulating layer formed at least on said third semiconductor region; and a second control electrode arranged correspondingly to said third semiconductor region and separated from said third semiconductor region by said second insulating layer, said third semiconductor region being sandwiched between said first and second control electrodes, wherein said first and second semiconductor regions are each adjacent to said third semiconductor region, said first and second semiconductor regions each having an impurity concentration not less than 10 19 cm -3 , said third semiconductor region having an impurity concentration not greater than 10 14 cm -3 , and said semiconductor layer having a thickness less than a maximum thickness of a depletion region, so that in said first and second semiconductor regions, (a) the depletion region extends to said third semiconductor region at a floating state of said second control electrode, and (b) the depletion region extends into a whole of said third semiconductor region at a driving state of said second control electrode.