US5043772A
Expired / Lapsed
US
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Semiconductor photo-electrically-sensitive device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1986-05-07
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Granted: 1991-08-27
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Expires: 2006-05-07
Abstract
Abstract A semiconductor photo-electrically-sensitive device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconductor layer member having at least one intrinsic, non-single-crystal semiconductor layer, and a second conductive layer is disposed on the non-single-crystal semiconductor layer member. The intrinsic non-single-crystal semiconductor layer contains sodium and oxygen in very low concentrations where each concentration is 5×10 18 atoms/cm 3 or less.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10F; H10F10/00; H10F10/10; H10F10/17; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F71/00; H10F71/10; H10F71/103; H10F77/00; H10F77/10; H10F77/16; H10F77/162; H10F77/166; H10F77/1662; H10P14/24; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
87 words
A semiconductor photo-electrically-sensitive device, comprising: a conductive substrate or a first conductive layer formed on a further substrate; a non-single-crystal semiconductor layer member on the conductive substrate or the first conductive layer and having at least one intrinsic non-single-crystal semiconductor layer; and a second conductive layer formed on the non-single-crystal semiconductor layer member; wherein the intrinsic non-single-crystal semiconductor layer contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 2
Dependent Claim
87 words
A semiconductor photo-electrically-sensitive device, comprising: a conductive substrate or a first conductive layer formed on a further substrate; a non-single-crystal semiconductor layer member on the conductive substrate or the first conductive layer and having at least one intrinsic non-single-crystal semiconductor layer; and a second conductive layer formed on the non-single-crystal semiconductor layer member; wherein the intrinsic non-single-crystal semiconductor layer contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 3
Dependent Claim
81 words
A semiconductor photo-electrically-sensitive device, comprising: an insulating substrate having formed thereon first and second conductive layers; and a non-single-crystal semiconductor layer member formed on the substrate to cover the first conductive layer and having at least one intrinsic non-single-crystal semiconductor layer; wherein the intrinsic non-single-crystal semiconductor layer of the non-single-crystal semiconductor layer member contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 4
Dependent Claim
81 words
A semiconductor photo-electrically-sensitive device, comprising: an insulating substrate having formed thereon first and second conductive layers; and a non-single-crystal semiconductor layer member formed on the substrate to cover the first conductive layer and having at least one intrinsic non-single-crystal semiconductor layer; wherein the intrinsic non-single-crystal semiconductor layer of the non-single-crystal semiconductor layer member contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 5
Dependent Claim
78 words
A semiconductor photo-electrically-sensitive device, comprising: a insulating substrate; a non-single-crystal semiconductor layer member on the substrate and having at least one intrinsic non-single-crystal semiconductor layer; and first and second conductive layer formed on the non-single-crystal semiconductor layer member; wherein the intrinsic non-single-crystal semiconductor layer of the non-single-crystal semiconductor layer member contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 6
Dependent Claim
78 words
A semiconductor photo-electrically-sensitive device, comprising: a insulating substrate; a non-single-crystal semiconductor layer member on the substrate and having at least one intrinsic non-single-crystal semiconductor layer; and first and second conductive layer formed on the non-single-crystal semiconductor layer member; wherein the intrinsic non-single-crystal semiconductor layer of the non-single-crystal semiconductor layer member contains sodium in a low concentration of only 5×10 18 atoms/cm 3 or less and oxygen in a low concentration of only 5×10 18 atoms/cm 3 or less.
Claim 7
Dependent Claim
30 words
A semiconductor photo-electrically-sensitive device according to claim 1, 2, or 3 wherein the intrinsic non-single-crystal semiconductor layer of the non-single-crystal semiconductor layer member is formed principally of silicon or germanium.
Claim 8
Dependent Claim
36 words
A semiconductor photo-electrically-sensitive device according to any one of claim 1, 2 or 3, wherein the intrinsic non-single-crystal semiconductor layer of the non-single-crystal semiconductor layer member contains hydrogen or a halogen as a recombination center neutralizer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-26 | 1995-02-25 | 1995-08-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-26 | 1999-02-25 | 1999-08-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-26 | 2003-02-25 | 2003-08-27 | $7700.00 | Window Closed / Lapsed |