Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
42 words
A dual dielectric MOSFET gate system comprising: a monocrystalline substrate having a surface, a silicon dioxide layer at the surface of the substrate, and an undoped amorphous silicon layer over the silicon dioxide layer and out of direct contact with the substrate.
Claim 2
Dependent Claim
42 words
A dual dielectric MOSFET gate system comprising: a monocrystalline substrate having a surface, a silicon dioxide layer at the surface of the substrate, and an undoped amorphous silicon layer over the silicon dioxide layer and out of direct contact with the substrate.
Claim 3
Dependent Claim
21 words
The dual dielectric gate system of claim 1 wherein said layer of silicon dioxide is formed by a rapid thermal oxidation.
Claim 4
Dependent Claim
25 words
The dual dielectric gate system of claim 2 wherein said layer of silicon dioxide is of thickness of between approximately 200 Å to 1,000 Å.
Claim 5
Dependent Claim
31 words
The dual dielectric gate system of claim 3 wherein the undoped layer of amorphous silicon on top of the silicon dioxide is of thickness of between about 500Å to 1,000 Å.
Claim 6
Dependent Claim
31 words
The dual dielectric gate system of claim 4 further comprising a second layer of silicon dioxide on said amorphous silicon layer of thickness of between about 100 Å to 200 Å.
Claim 7
Dependent Claim
17 words
The dual dielectric gate system of claim 1 wherein said substrate is of silicon counterdoped with germanium.
Claim 8
Dependent Claim
20 words
The dual dielectric gate system of claim 5 further comprising a gate metal over the second layer of silicon dioxide.
Claim 9
Dependent Claim
23 words
The dual dielectric gate system of claim 7 wherein said gate metal comprises an aluminum gate metal of thickness of about 5,000 Å.
Claim 10
Dependent Claim
93 words
A dual dielectric gate system comprising: a monocrystalline substrate; a first silicon dioxide dielectric film of thickness of between approximately 200 Å to 1,000 Å at a surface of the substrate; an undoped layer of amorphous silicon of thickness of between about 500 Å to 1,000 Å on the silicon dioxide; a second layer of silicon dioxide of thickness of between about 100 Å to 200 Å on the amorphous silicon to protect the dual dielectric gate from aluminum-amorphous silicon interphase reactions; and a gate metal on the second layer of silicon dioxide.
Claim 11
Dependent Claim
93 words
A dual dielectric gate system comprising: a monocrystalline substrate; a first silicon dioxide dielectric film of thickness of between approximately 200 Å to 1,000 Å at a surface of the substrate; an undoped layer of amorphous silicon of thickness of between about 500 Å to 1,000 Å on the silicon dioxide; a second layer of silicon dioxide of thickness of between about 100 Å to 200 Å on the amorphous silicon to protect the dual dielectric gate from aluminum-amorphous silicon interphase reactions; and a gate metal on the second layer of silicon dioxide.
Claim 12
Dependent Claim
21 words
The dual dielectric gate system of claim 9 wherein said first layer of silicon dioxide is produced by rapid thermal oxidation.
Claim 13
Dependent Claim
21 words
The dual dielectric gate system of claim 9 wherein said gate metal comprises an aluminum of thickness of about 5,000 Å.