US4521794A
Expired / Lapsed
US
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Electrode and semiconductor device provided with the electrode
Assignee: NTT Inc
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Filing: 1984-07-03
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Granted: 1985-06-04
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Expires: 2004-07-03
Abstract
Abstract A semiconductor layer is formed on at least one portion of a silicon substrate. The layer is made of poly-crystalline or amorphous multicomponent containing silicon, at least one element of Group IV having an atomic radius larger than that of silicon, such as germanium or tin, and donor impurity or acceptor impurity.
Inventors
- 👤 Katsumi Murase
- 👤 Yoshihiko Mizushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 05:52
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D64/60; H10D64/62; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
40 words
An electrode arrangement comprising an amorphous silicon electrode layer disposed on a substrate, said electrode layer consisting essentially of (i) amorphous silicon, (ii) one element of Group IV selected from the group consisting of germanium and tin, and (iii) boron.
Claim 2
Dependent Claim
40 words
An electrode arrangement comprising an amorphous silicon electrode layer disposed on a substrate, said electrode layer consisting essentially of (i) amorphous silicon, (ii) one element of Group IV selected from the group consisting of germanium and tin, and (iii) boron.
Claim 3
Dependent Claim
46 words
A semiconductor device comprising a semiconductor substrate and an electrode layer formed on the substrate, said electrode layer being an amorphous silicon consisting essentially of (i) amorphous silicon, (ii) one element of Group IV selected from the group consisting of germanium and tin, and (iii) boron.
Claim 4
Dependent Claim
46 words
A semiconductor device comprising a semiconductor substrate and an electrode layer formed on the substrate, said electrode layer being an amorphous silicon consisting essentially of (i) amorphous silicon, (ii) one element of Group IV selected from the group consisting of germanium and tin, and (iii) boron.
Claim 5
Dependent Claim
26 words
The semiconductor device according to claim 2, wherein said semiconductor substrate and said electrode layer are of the same conductivity type and forms an ohmic contact.
Claim 6
Dependent Claim
25 words
The semiconductor device according to claim 2, wherein said semiconductor substrate and said electrode layer are of different conductivity types and and have rectifying characteristics.
Claim 7
Dependent Claim
17 words
The electrode arrangement according to claim 1 or 2, wherein said element of Group IV is germanium.
Claim 8
Dependent Claim
17 words
The electrode arrangement according to claim 1 or 2, wherein said element of Group IV is tin.
Claim 9
Dependent Claim
16 words
The electrode arrangement accordiing to claim 2, wherein said substrate is a single crystalline silicon substrate.
Claim 10
Dependent Claim
15 words
The electrode arrangement according to claim 2, wherein said substrate is a polycrystalline silicon substrate.
Claim 11
Dependent Claim
15 words
The electrode arrangement according to claim 2, wherein said substrate is an amorphous silicon substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-06-03 | 1988-12-03 | 1989-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-06-03 | 1992-12-03 | 1993-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-06-03 | 1996-12-03 | 1997-06-04 | $7700.00 | Window Closed / Lapsed |