Lead-doped silicon with enhanced semiconductor properties

Claim 2

Process for production of poly-crystalline silicon having semiconductor properties with improved optoelectronic properties, which comprises forming the poly-crystalline silicon by thermal decomposition of a reaction mixture of a gaseous silicon compound selected from the group consisting of silicon chloroform and silicon tetrachloride mixed with a carrier gas containing hydrogen, depositing said poly-crystalline silicon onto a silicon carrier body which is heated by means of direct passage of electric current, and adding lead to the poly-crystalline silicon during its production, as an agent which increases the carrier life time.

Claim 3

Process according to claim 1, wherein said lead is supplied as a compound carried by a separate gas stream.

Claim 4

Process according to claim 1, wherein lead is supplied by charging a reaction mixture of gaseous silicon compound and carrier gas with a lead compound.

Claim 5

Process according to claim 2 or claim 3, wherein the quantity of the lead to be incorporated is varied by varying the temperature of the lead compound.

Claim 6

Process according to claim 1, wherein the amount of lead addition is 10 -6 to 10 -9 parts by weight of silicon.

Claim 7

Process according to claim 1, wherein the amount of lead addition is 10 -7 to 10 -8 parts by weight of silicon.

Claim 8

Process according to claim 1, wherein metallic lead is used for the lead incorporation.

Claim 9

Process according to claim 1, wherein lead iodide is used for the lead incorporation.

Claim 10

Process according to claim 1, wherein lead chloride is used for the lead incorporation.

Claim 11

Process according to claim 1, wherein lead tetraethyl is used for the lead incorporation.

Claim 12

Process according to claim 1, wherein lead tetramethyl is used for the lead incorporation.

Claim 13

Process according to claim 1, wherein lead acetate is used for the lead incorporation.

Claim 14

Process for production of poly-crystalline silicon having semiconductor properties with improved optoelectronic properties, which comprises forming the poly-crystalline silicon by thermal decomposition of a reaction mixture of a gaseous silicon compound selected from the group consisting of silicon chloroform and silicon tetrachloride mixed with a carrier gas containing hydrogen, depositing said poly-crystalline silicon onto a silicon carrier body which is heated by means of direct passage of electric current, and thereafter diffusing lead into the poly-crystalline silicon.

Claim 15

Process for production of poly-crystalline silicon having semiconductor properties with improved optoelectronic properties, which comprises forming the poly-crystalline silicon by thermal decomposition of a reaction mixture of a gaseous silicon compound selected from the group consisting of silicon chloroform and silicon tetrachloride mixed with a carrier gas containing hydrogen, depositing said poly-crystalline silicon onto a silicon carrier body which is heated by means of direct passage of electric current, and thereafter diffusing lead into the poly-crystalline silicon.

Claim 16

Process according to claim 13, wherein the lead is diffused into a poly-crystalline silicon rod in a sealed container.

Claim 17

Process according to claim 13, wherein a silicon rod is divided into disks and a stack of disks is diffused with lead in a sealed ampoule.

Claim 18

Process according to claim 13, wherein the lead is diffused into the semiconductor material at a temperature of approximately 1250° C.

Claim 19

Process according to claim 13, wherein a dopant which determines the conductivity of the silicon is diffused simultaneously with the lead diffusion.

Claim 20

Process according to claim 17, wherein said dopant diffusion is a phosphorous diffusion.

Claim 21

Process according to claim 13 or claim 17, wherein the lead diffusion is carried out over a period of at least several hours.

Claim 22

Process for the production of poly-crystalline silicon having semiconductor properties with improved optoelectric properties, which comprises forming the poly-crystalline silicon by thermal decomposition of a reaction mixture of a gaseous silicon compound selected from the group consisting of silicon chloroform and silicon tetrachloride mixed with a carrier gas containing hydrogen, depositing said poly-crystalline silicon into a silicon carrier body which is heated by means of direct passage of electric current to form a poly-crystalline silicon rod, subjecting said silicon rod to crucible-free zone melting, and doping said rod with gaseous lead during the crucible-free zone melting.

Claim 23

Process for the production of poly-crystalline silicon having semiconductor properties with improved optoelectric properties, which comprises forming the poly-crystalline silicon by thermal decomposition of a reaction mixture of a gaseous silicon compound selected from the group consisting of silicon chloroform and silicon tetrachloride mixed with a carrier gas containing hydrogen, depositing said poly-crystalline silicon into a silicon carrier body which is heated by means of direct passage of electric current to form a poly-crystalline silicon rod, subjecting said silicon rod to crucible-free zone melting, and doping said rod with gaseous lead during the crucible-free zone melting.

Claim 24

Process according to claim 20, wherein said lead is supplied as a gaseous lead compound.

Claim 27

Method according to claim 22, wherein the amount of lead is 10 -7 to 10 -8 parts by weight of silicon.

Claim 30

Method according to claim 24, wherein the amount of lead is 10 -7 to 10 -8 parts by weight of silicon.

Claim 31

An optoelectronic device containing a silicon component having semiconductor properties, said silicon having incorporated lead as an agent which increases the carrier life time.

Claim 32

An optoelectronic device containing a silicon component having semiconductor properties, said silicon having incorporated lead as an agent which increases the carrier life time.

Claim 33

Optoelectronic device according to claim 26, wherein the amount of lead addition is 10 -6 to 10 -9 parts by weight of silicon.

Claim 34

Optoelectronic device according to claim 27, wherein the lead addition is 10 -7 to 10 -8 parts by weight of silicon.

Claim 35

A solar cell containing a silicon component having semiconductor properties, said silicon having lead as an agent which increases the carrier life time to effect an increase in the efficiency factor of the cell.

Claim 36

A solar cell containing a silicon component having semiconductor properties, said silicon having lead as an agent which increases the carrier life time to effect an increase in the efficiency factor of the cell.

Claim 37

Solar cell according to claim 29, wherein the amount of lead addition is 10 -6 to 10 -9 parts by weight of silicon.

Claim 38

Solar cell according to claim 30, wherein the lead addition is 10 -7 to 10 -8 parts by weight of silicon.