US4656497A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Trench isolation structures
Assignee: MagnaChip Semiconductor Ltd
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Filing: 1985-10-03
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Granted: 1987-04-07
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Expires: 2005-10-03
Abstract
Abstract A method for forming trench isolation oxide using doped silicon dioxide which is reflowed at elevated temperatures to collapse any voids therein and produce surface planarity. An underlying layered composite selected from oxide, polysilicon and silicon nitride permits the formation and reflow of the doped isolation oxide and remains in place in the trench to contribute to the trench isolation structure.
Inventors
- 👤 Steven H. Rogers
- 👤 Randall S. Mundt
- 👤 Denise A. Kaya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:32
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
35 words
A trench dielectric isolation structure formed in a substrate, comprising a trench having substantially vertical sidewalls; and a layered structure comprising, in order from the trench walls, silicon dioxide, silicon, silicon nitride and silicon dioxide.
Claim 2
Dependent Claim
35 words
A trench dielectric isolation structure formed in a substrate, comprising a trench having substantially vertical sidewalls; and a layered structure comprising, in order from the trench walls, silicon dioxide, silicon, silicon nitride and silicon dioxide.
Claim 3
Dependent Claim
35 words
A trench dielectric isolation structure formed in a substrate, comprising a trench having substantially vertical sidewalls; and a layered structure comprising, in order from the trench walls, silicon dioxide, silicon nitride, silicon and silicon dioxide.
Claim 4
Dependent Claim
35 words
A trench dielectric isolation structure formed in a substrate, comprising a trench having substantially vertical sidewalls; and a layered structure comprising, in order from the trench walls, silicon dioxide, silicon nitride, silicon and silicon dioxide.
Claim 5
Dependent Claim
36 words
A trench dielectric isolation structure formed in a substrate, comprising a trench having substantially vertical sidewalls; and a layered structure comprising, in order from the trench walls, silicon dioxide, silicon, silicon nitride, silicon and silicon dioxide.
Claim 6
Dependent Claim
36 words
A trench dielectric isolation structure formed in a substrate, comprising a trench having substantially vertical sidewalls; and a layered structure comprising, in order from the trench walls, silicon dioxide, silicon, silicon nitride, silicon and silicon dioxide.
References Cited (Backward Citations)
US4104086A
Cited
US4404735A
Cited
US4356211A
Cited
US4396460A
Cited
US4582565A
Cited
US4546538A
Cited
US4519128A
Cited
US4528047A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-04-06 | 1990-10-06 | 1991-04-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-04-06 | 1994-10-06 | 1995-04-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-04-06 | 1998-10-06 | 1999-04-07 | $7700.00 | Window Closed / Lapsed |