US4582565A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing integrated semiconductor circuit devices
Assignee: Oki Electric Industry Co Ltd
•
Filing: 1984-08-08
•
Granted: 1986-04-15
•
Expires: 2004-08-08
Abstract
Abstract A method of fabricating integrated semiconductor circuit devices with improved surface planarity. An oxidation-resistant masking layer is deposited over the surface of a semiconductor body and the walls of vertical trenches of a given width formed in the semiconductor body surface. The masking layer is removed in part from predetermined portions of the semiconductor body surface. A polycrystalline semiconductor material is deposited over the semiconductor body surface to bury the trenches, followed by continuous partial removal of the polycrystalline semiconductor material and the semiconductor body at portions corresponding to the predetermined portions of the semiconductor body surface to a predetermined surface level lower than the semiconductor body surface. The remainder of each of the polycrystalline semiconductor material and the above corresponding portions of the semiconductor body is thermally oxidized to present substantially the same surface level with the semiconductor body surface, whereby the semiconductor body has a flat surface. Preferably, a second oxidation-resistant masking layer is deposited over the partly removed semiconductor body along its whole surface including predetermined lower surface portions thereof in a manner superimposed upon the first-mentioned masking layer. The second masking layer is removed at portions on a predetermined level lower than the semiconductor body surface. Also portions of the semiconductor body from which the second masking layer has been removed are thermally oxidized during the above oxidation step, to further enhance the surface planarity of the semiconductor body.
Inventors
- 👤 Akira Kawakatsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 20:52
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/041; H10W10/10; H10W10/13; H10W10/40
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
222 words
A method of forming a structure adapted for formation of integrated circuit devices on a semiconductor body, comprising the steps of: (1) forming in one surface of said semiconductor body a plurality of trenches of a given width extending substantially vertically with respect to said one surface; (2) depositing an oxidation-resistant masking layer over said one surface of said semiconductor body and the walls of said trenches; (3) removing portions of said oxidation-resistant masking layer corresponding to predetermined portions of said one surface of said semiconductor body; (4) depositing a polycrystalline semiconductor material over said one surface of said semiconductor body to bury said trenches; (5) continuously removing in part said polycrystalline semiconductor material and portions of said semiconductor body corresponding to said predetermined portions of said one surface thereof, from which said portions of said oxidation-resistant masking layer have been removed, until said polycrystalline semiconductor material and said semiconductor body have a predetermined surface level lower than said one surface of said semiconductor body; and (6) oxidizing at least in part the remainder of said polycrystalline semiconductor material and the remainder of said portions of said semiconductor body corresponding to said predetermined portions of said one surface thereof, to cause same to increase in volume until they have substantially the same surface level with said one surface of said semiconductor body.
Claim 2
Independent Claim
222 words
A method of forming a structure adapted for formation of integrated circuit devices on a semiconductor body, comprising the steps of: (1) forming in one surface of said semiconductor body a plurality of trenches of a given width extending substantially vertically with respect to said one surface; (2) depositing an oxidation-resistant masking layer over said one surface of said semiconductor body and the walls of said trenches; (3) removing portions of said oxidation-resistant masking layer corresponding to predetermined portions of said one surface of said semiconductor body; (4) depositing a polycrystalline semiconductor material over said one surface of said semiconductor body to bury said trenches; (5) continuously removing in part said polycrystalline semiconductor material and portions of said semiconductor body corresponding to said predetermined portions of said one surface thereof, from which said portions of said oxidation-resistant masking layer have been removed, until said polycrystalline semiconductor material and said semiconductor body have a predetermined surface level lower than said one surface of said semiconductor body; and (6) oxidizing at least in part the remainder of said polycrystalline semiconductor material and the remainder of said portions of said semiconductor body corresponding to said predetermined portions of said one surface thereof, to cause same to increase in volume until they have substantially the same surface level with said one surface of said semiconductor body.
Claim 3
Dependent Claim
106 words
A method as claimed in claim 1, wherein said step (3) comprises depositing a photoresist over said one surface of said semiconductor body to bury said trenches, exposing to light selected portions of said photoresist in a manner such that portions of said photoresist on said predetermined portions of said one surface of said semiconductor body are removed by development, whereas portions of said photoresist within said trenches remain unremoved even by said development, removing said exposed selected portions of said photoresist, and etching said portions of said oxidation-resistant masking layer to remove same from said predetermined portions of said one surface of said semiconductor body.
Claim 4
Dependent Claim
27 words
A method as claimed in claim 1, wherein said step (1) comprises reactively ion etching said one surface of said semiconductor body to form said trenches therein.
Claim 5
Dependent Claim
35 words
A method as claimed in claim 1, wherein said step (2) comprises forming said oxidation-resistant masking layer over said one surface of said semiconductor body and the walls of said trenches, by chemical vapor deposition.
Claim 6
Dependent Claim
26 words
A method as claimed in claim 1, wherein in said step (5), said polycrystalline semiconductor material and said semiconductor body are removed in part by etching.
Claim 7
Dependent Claim
35 words
A method as claimed in claim 5, wherein said polycrystalline semiconductor material is formed of polycrystalline silicon, and at least part of said semiconductor body to be removed by etching is formed of monocrystalline silicon.
Claim 8
Dependent Claim
28 words
A method as claimed in claim 1, wherein said structure has a plurality of regions formed in said semiconductor body, said trenches being isolation trenches isolating said regions.
Claim 9
Dependent Claim
33 words
A method as claimed in claim 7, wherein said regions comprise element-forming regions and field regions, said field regions being formed in said predetermined portions of said one surface of said semiconductor body.
Claim 10
Dependent Claim
76 words
A method as claimed in claim 8, wherein said semiconductor body comprises a substrate of a predetermined conductivity type, a buried layer of the opposite conductivity type formed by diffusion over a substantially entire surface of said substrate, and an epitaxial layer of said opposite conductivity type formed over said buried layer, said isolation trenches extending through said epitaxial layer and said buried layer into said subtrate, said element-forming regions being surrounded between said isolation trenches.
Claim 11
Dependent Claim
88 words
A method as claimed in claim 9, wherein said predetermined portions of said one surface of said semiconductor body include a portion located within at least one of said device, said step (5) including removing in part said semiconductor body to form a second trench in said portion of said at least one of said device-forming regions, said step (6) including thermally oxidizing said second trench to form therein oxide extending through said epitaxial layer to divide same into two regions both having said buried layer underlying them.
Claim 12
Independent Claim
25 words
A method as claimed in claimed 9, including the step of forming a channel stop layer under the bottom of each of said isolation trenches.
Claim 13
Independent Claim
291 words
A method of forming a structure adapted for formation of integrated circuit devices on a semiconductor body, comprising the steps of: (1) forming in one surface of said semiconductor body a plurality of trenches of a given width extending substantially vertically with respect to said one surface; (2) depositing a first oxidation-resistant masking layer over said one surface of said semiconductor body and the walls of said trenches; (3) removing portions of said first oxidation-resistant masking layer corresponding to predetermined portions of said one surface of said semiconductor body; (4) depositing a polycrystalline semiconductor material over said one surface of said semiconductor body to bury said trenches; (5) continuously removing in part said polycrystalline semiconductor material and portions of said semiconductor body corresponding to said predetermined portions of said one surface thereof, from which said portions of said oxidation-resistant masking layer have been removed, until said polycrystalline semiconductor material and said semiconductor body have a predetermined surface level lower than said one surface of said semiconductor body; (6) depositing a second oxidation-resistant masking layer over said semiconductor body along said one surface thereof and predetermined surface portions thereof lower in level than said one surface in a manner superimposed upon said first oxidation-resistant masking layer; (7) removing portions of said second oxidation-resistant masking layer on a predetermined level lower than said one surface of said semiconductor body; and (8) oxidizing at least in part the remainder of said polycrystalline semiconductor material and the remainder of said portions of said semiconductor body corresponding to said predetermined portions of said one surface thereof and said predetermined lower surface portions thereof, to cause same to increase in volume until they have substantially the same surface level with said one surface of said semiconductor body.
Claim 14
Independent Claim
291 words
A method of forming a structure adapted for formation of integrated circuit devices on a semiconductor body, comprising the steps of: (1) forming in one surface of said semiconductor body a plurality of trenches of a given width extending substantially vertically with respect to said one surface; (2) depositing a first oxidation-resistant masking layer over said one surface of said semiconductor body and the walls of said trenches; (3) removing portions of said first oxidation-resistant masking layer corresponding to predetermined portions of said one surface of said semiconductor body; (4) depositing a polycrystalline semiconductor material over said one surface of said semiconductor body to bury said trenches; (5) continuously removing in part said polycrystalline semiconductor material and portions of said semiconductor body corresponding to said predetermined portions of said one surface thereof, from which said portions of said oxidation-resistant masking layer have been removed, until said polycrystalline semiconductor material and said semiconductor body have a predetermined surface level lower than said one surface of said semiconductor body; (6) depositing a second oxidation-resistant masking layer over said semiconductor body along said one surface thereof and predetermined surface portions thereof lower in level than said one surface in a manner superimposed upon said first oxidation-resistant masking layer; (7) removing portions of said second oxidation-resistant masking layer on a predetermined level lower than said one surface of said semiconductor body; and (8) oxidizing at least in part the remainder of said polycrystalline semiconductor material and the remainder of said portions of said semiconductor body corresponding to said predetermined portions of said one surface thereof and said predetermined lower surface portions thereof, to cause same to increase in volume until they have substantially the same surface level with said one surface of said semiconductor body.
Claim 15
Dependent Claim
94 words
A method as claimed in claim 12, wherein said step (5) comprises removing in part by etching said polycrystalline semiconductor material and said semiconductor body, said etching being so effected as to configurate said second trench in said semiconductor body such that said first oxidation-resistant masking layer has overhangs lying in an end of said second trench opening in said one surface of said semiconductor body, said step (6) comprising depositing said second oxidation-resistant masking layer in a manner covering said overhangs of said first masking layer and the walls of said second trench.
Claim 16
Dependent Claim
84 words
A method as claimed in claim 13, wherein said semiconductor body comprises a substrate of a predetermined conductivity type, a buried layer of the opposite conductivity type formed by diffusion over a substantially entire surface of said substrate, and an epitaxial layer of said opposite conductivity type formed over said buried layer, said second trench being thermally increased in volume to penetrate said epitaxial layer during said step (8) to divide said epitaxial layer into two regions both having said buried layer underlying them.
Claim 17
Dependent Claim
28 words
A method as claimed in claim 12, wherein said step (2) and said step (3) comprise forming respective ones of said oxidation-resistant masking layers by chemical vapor deposition.
Claim 18
Dependent Claim
38 words
A method as claimed in claim 12, wherein said step (7) comprises removing said portions of said second oxidation-resistant masking layer on said predetermined level lower than said one surface of said semiconductor body, by reactive ion etching.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-14 | 1989-10-14 | 1990-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-14 | 1993-10-14 | 1994-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-14 | 1997-10-14 | 1998-04-15 | $7700.00 | Window Closed / Lapsed |