EP0161555A2
Expired / Lapsed
EP
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Thin film field effect transistor and method of making same
Assignee: Energy Conversion Devices Inc
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Filing: 1985-04-25
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Granted: —
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Expires: 2005-04-25
Abstract
Abstract @ There is disclosed a film field effect transistor which can be operated at fast switching rates for use, for example, in video display applications. The transistor includes a body of silicon semiconductor material having a structure more ordered than amorphous material and less ordered than single crystalline material. The source and drain of the transistor comprise rectifying contacts formed on the body of silicon semiconductor material. Also disclosed are a method of making the transistor and an electronically addressable array system utilizing the transistor to advantage.
Inventors
- 👤 Stanford R. Ovshinsky
- 👤 Stephen J. Hudgens
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 10:22
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/674; H10D30/6741; H10D30/6743; H10D62/00; H10D62/40; H10D62/80; H10D62/83; H10D62/832; H10D64/00; H10D64/60; H10D64/64; H10D64/647; H10D86/60; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
98 words
A thin film field effect transistor (50) of the type having a body (54) of semiconductor material, a source (56) and a drain (58) forming rectifying contacts with said body of semiconductor material, and a gate electrode (52) adjacent to and insulated from said body of semiconductor material, said transistor (50) being characterized by said body of semiconductor material including at least silicon, said semiconductor material having a structure more ordered than amorphous semiconductor material and less ordered than single crystalline semiconductor material and by said source and drain being formed on said body of amorphous semiconductor material.
Claim 2
Dependent Claim
98 words
A thin film field effect transistor (50) of the type having a body (54) of semiconductor material, a source (56) and a drain (58) forming rectifying contacts with said body of semiconductor material, and a gate electrode (52) adjacent to and insulated from said body of semiconductor material, said transistor (50) being characterized by said body of semiconductor material including at least silicon, said semiconductor material having a structure more ordered than amorphous semiconductor material and less ordered than single crystalline semiconductor material and by said source and drain being formed on said body of amorphous semiconductor material.
Claim 3
Dependent Claim
24 words
A thin film field effect transistor (50) as defined in Claim 1 further characterized by said body (54) of semiconductor material also including germanium.
Claim 4
Dependent Claim
30 words
A thin film field effect transistor (50) as defined in Claim 1 further characterized by said source (56) and drain (58) being deposited on said body (54) of semiconductor material.
Claim 5
Dependent Claim
38 words
A thin film field effect transistor (50) as defined in Claim 3 further characterized by said source (56) and drain (58) comprising deposits of a metal which forms rectifying Schottky barrier junctions with said body of semiconductor material.
Claim 6
Dependent Claim
53 words
A thin film field effect transistor (50) as defined in Claim 1 further characterized by said source (56) and drain (58) being formed as doped regions on said body (54) of semiconductor material and by said body being of a first conductivity type and said doped regions being of an opposite conductivity type.
Claim 7
Dependent Claim
34 words
A thin film field effect transistor (50) as defined in Claim 5 further characterized by said source (56) and drain (58) comprising deposits of a doped semiconductor on said body (54) of semiconductor material.
Claim 8
Dependent Claim
25 words
A thin film field effect transistor (50) as defined in Claim 6 further characterized by said doped semiconductor deposits (56,58) comprising an amorphous semiconductor alloy.
Claim 9
Dependent Claim
22 words
A thin film field effect transistor (50) as defined in Claim 7 further characterized by said amorphous semiconductor alloy (56,58) including silicon.
Claim 10
Dependent Claim
24 words
A thin film field effect transistor (50) as defined in Claim 8 further characterized by said amorphous silicon alloy (56,58) including hydrogen or fluorine.
Claim 11
Dependent Claim
22 words
A thin film field effect transistor (50) as defined in Claim 8 further characterized by said amorphous silicon alloy (56,58) including fluorine.
Claim 12
Dependent Claim
24 words
A thin film field effect transistor (50) as defined in Claim 1 further characterized by said body (54) of semiconductor material further including hydrogen.
Claim 13
Dependent Claim
24 words
A thin film field effect transistor (50) as defined in Claim 1 further characterized by said body (54) of semiconductor material further including fluorine.
Claim 14
Independent Claim
189 words
A system (70) for selectively addressing each element (96) of an array of elements, said system being of the type having a first set of address lines (72,74,76,78,80,82), a second set of address lines (84,86,88,90,92) spaced from and crossing at an angle to said first set of address lines to form a plurality of crossover points (94) therewith, each such crossover point being associated with a given one of said elements to be addressed, and addressing circuitry (102,104) coupled to said first and second sets of address lines for selectively applying addressing potentials to respective pairs of said first and second sets of address lines; said system being characterized by said addressing circuitry including at least one thin film field effect transistor (50) comprising a body (54) of semiconductor material, said body including at least silicon with said semiconductor material having a structure more ordered than amorphous semiconductor material and less ordered than single crystalline semiconductor material, a source (56) and a drain (58) formed as rectifying contacts on said body of semiconductor material, and a gate electrode (62) adjacent to and insulated from said body of semiconductor material.
Claim 15
Independent Claim
189 words
A system (70) for selectively addressing each element (96) of an array of elements, said system being of the type having a first set of address lines (72,74,76,78,80,82), a second set of address lines (84,86,88,90,92) spaced from and crossing at an angle to said first set of address lines to form a plurality of crossover points (94) therewith, each such crossover point being associated with a given one of said elements to be addressed, and addressing circuitry (102,104) coupled to said first and second sets of address lines for selectively applying addressing potentials to respective pairs of said first and second sets of address lines; said system being characterized by said addressing circuitry including at least one thin film field effect transistor (50) comprising a body (54) of semiconductor material, said body including at least silicon with said semiconductor material having a structure more ordered than amorphous semiconductor material and less ordered than single crystalline semiconductor material, a source (56) and a drain (58) formed as rectifying contacts on said body of semiconductor material, and a gate electrode (62) adjacent to and insulated from said body of semiconductor material.
Claim 16
Independent Claim
107 words
A method of making a thin film field effect transistor (50), said method being of the type including forming a body (54) of semiconductor material, forming a source (56) and a drain (58) in rectifying contact with said body, and forming a gate electrode (62) adjacent to and insulated from said body of semiconductor material, said method being characterized by forming said body of semiconductor material from a material including at least silicon, said semiconductor material being formed with a structure more ordered than amorphous silicon semiconductor material and less ordered than single crystalline silicon semiconductor material, and by forming said source and drain on said body.
Claim 17
Independent Claim
107 words
A method of making a thin film field effect transistor (50), said method being of the type including forming a body (54) of semiconductor material, forming a source (56) and a drain (58) in rectifying contact with said body, and forming a gate electrode (62) adjacent to and insulated from said body of semiconductor material, said method being characterized by forming said body of semiconductor material from a material including at least silicon, said semiconductor material being formed with a structure more ordered than amorphous silicon semiconductor material and less ordered than single crystalline silicon semiconductor material, and by forming said source and drain on said body.
Claim 18
Dependent Claim
44 words
A method as defined in Claim 14 further characterized by the body (54) of semiconductor material being formed by depositing the silicon semiconductor material onto a substrate (52) and the substrate (52) being held at temperatures between 450°C and 500°C during the deposition thereof.
Claim 19
Dependent Claim
22 words
A method as defined in Claim 15 further characterized by the body (54) of semiconductor material being deposited by molecular beam epitaxy.
Claim 20
Dependent Claim
28 words
A method as defined in Claim 14 further characterized by including the step of annealing the semiconductor body (54) prior to forming the drain (58) and source (56).
Claim 21
Dependent Claim
21 words
A method as defined in Claim 17 further characterized by the semiconductor body (54) being annealed in a hydrogen gas atmosphere.
Claim 22
Dependent Claim
22 words
A method as defined in Claim 18 further characterized by the semiconductor body (54) being annealed at a temperature of about 500°C.
Claim 23
Dependent Claim
27 words
A method as defined in Claim 17 further characterized by the semiconductor body (54) being annealed in an atmosphere of a hydrogen gas and a forming gas.
Claim 24
Dependent Claim
15 words
A method as defined in Claim 20 further characterized by the forming gas being nitrogen.
Claim 25
Dependent Claim
22 words
A method as defined in Claim 20 further characterized by the semiconductor body (54) being annealed at a temperature of about 500°C.
Claim 26
Dependent Claim
20 words
A method as defined in Claim 17 further characterized by the semiconductor body (54) being annealed in a hydrogen plasma.
Claim 27
Dependent Claim
20 words
A method as defined in Claim 17 further characterized by the semiconductor body (54) being annealed in a fluorine plamsa.
Claim 28
Dependent Claim
37 words
A method as defined in Claim 14 further characterized by the source (56) and drain (58) being formed by depositing a doped semiconductor in at least two spaced apart regions on the body (54) of semiconductor material.
Claim 29
Dependent Claim
19 words
A method as defined in Claim 25 further characterized by the doped semiconductor (56,58) comprising an amorphous semiconductor alloy.
Claim 30
Dependent Claim
17 words
A method as defined in Claim 26 further characterized by the amorphous semiconductor alloy (56,58) including silicon.
Claim 31
Dependent Claim
17 words
A method as defined in Claim 27 further characterized by the amorphous silicon alloy (56,58) including hydrogen.
Claim 32
Dependent Claim
17 words
A method as defined in Claim 27 further characterized by the amorphous silicon alloy (56,58) including fluorine.
Claim 33
Dependent Claim
58 words
A method as defined in Claim 14 further characterized by the source (56) and the drain (58) being formed by depositing a metal on at least two spaced apart regions on the body (54) of semiconductor material and by said metal being of a type which forms a rectifying Schottky barrier junction with said body of semiconductor material.
References Cited (Backward Citations)
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