Photoelectric conversion device

Claim 2

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of P-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of N-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming a PIN junction; wherein the first non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the third non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains oxygen at a concentration less than 5×10 19 atoms/cm 3 .

Claim 3

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of N-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of P-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming an NIP junction; wherein the third non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein be second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the first non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains oxygen at a concentration less than 5×10 19 atoms/cm 3 .

Claim 4

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of N-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of P-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming an NIP junction; wherein the third non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein be second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the first non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains oxygen at a concentration less than 5×10 19 atoms/cm 3 .

Claim 5

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of P-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of N-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming a PIN junction; wherein the first non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the third non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains carbon at a concentration less than 4×10 18 atoms/cm 3 .

Claim 6

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of P-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of N-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming a PIN junction; wherein the first non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the third non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains carbon at a concentration less than 4×10 18 atoms/cm 3 .

Claim 7

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of N-type first conductivity, an I-type non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of P-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming an NIP junction; wherein the third non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the first non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains carbon at a concentration less than 4×10 18 atoms/cm 3 .

Claim 8

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of N-type first conductivity, an I-type non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of P-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming an NIP junction; wherein the third non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the first non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains carbon at a concentration less than 4×10 18 atoms/cm 3 .

Claim 9

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of P-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of N-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming a PIN junction; wherein the first non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continusouly decreases towards the third non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains phosphorus at a concentration less than 5×10 15 atoms/cm 3 .

Claim 10

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of P-type conductivity, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of N-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming a PIN junction; wherein the first non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continusouly decreases towards the third non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains phosphorus at a concentration less than 5×10 15 atoms/cm 3 .

Claim 11

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of N-type first conductivity type, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of P-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming an NIP junction; wherein the third non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the first non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains phosphorous at a concentration less than 5×10 15 atoms/cm 3 .

Claim 12

A photoelectric conversion device comprising: a substrate having a conductive surface; a non-single-crystal semiconductor laminate member formed on the substrate; and a conductive layer formed on the non-single-crystal semiconductor laminate member; wherein the non-single-crystal semiconductor laminate member has a first non-single-crystal semiconductor layer of N-type first conductivity type, an I-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer of P-type conductivity formed on the second non-single-crystal semiconductor layer, the first, second, and third non-single-crystal semiconductor layers forming an NIP junction; wherein the third non-single-crystal semiconductor layer is disposed on the side on which light is incident; wherein the second non-single-crystal semiconductor layer has introduced thereinto a P-type impurity which is distributed so that its concentration continuously decreases towards the first non-single-crystal semiconductor layer in the thickwise direction of the second layer; and wherein the second non-single-crystal semiconductor layer contains hydrogen or a halogen as a recombination center neutralizer and further contains phosphorous at a concentration less than 5×10 15 atoms/cm 3 .

Claim 13

A photoelectric conversion device according to any one of claims 1 to 6, wherein the ratio of P-type impurity concentrations in the second non-single-crystal semiconductor layer at both ends thereof adjoining the first and third non-single-crystal semiconductor layers, respectively, is in the range of 1/10 to 1/100.

Claim 14

A photoelectric conversion device according to any one of claims 1, 3, or 5, wherein the substrate is light-transparent.

Claim 15

A photoelectric conversion device according to claim 8, wherein the P-type impurity introduced into the first non-single-crystal semiconductor layer is boron.

Claim 16

A photoelectric conversion device according to claim 8, wherein the concentration of the P-type impurity in the first non-single-crystal semiconductor layer is above 10 18 atoms/cm 3 , wherein the P-type impurity introduced into the second non-single-crystal semiconductor layer is boron and has a concentration in the range of 2×10 15 to 2×10 17 atoms/cm 3 at one end of the second layer adjoining the first non-single-crystal semiconductor layer, and wherein the ratio of the concentration of the P-type impurity in the second non-single-crystal semiconductor layer at the other end thereof adjoining the third non-single-crystal semiconductor to the P-type impurity concentration in the second layer at the said one end thereof is in the range of 1/10 to 1/100.

Claim 17

A photoelectric conversion device according to claim 10, wherein the first non-single-crystal semiconductor layer has a larger energy band gap than does the second non-single-crystal semiconductor layer.

Claim 18

A photoelectric conversion device according to claim 11, wherein the first non-single-crystal semiconductor layer is formed of Si x C 1-x (where 0<x<1), and wherein the second non-single-crystal semiconductor layer is formed of silicon.

Claim 19

A photoelectric conversion device according to any one of claims 1, 4, or 5, wherein the P-type impurity introduced into the third non-single-crystal semiconductor layer is boron.

Claim 20

A photoelectric conversion device according to any one of claims 2, 4, or 5, wherein the concentration of the P-type impurity in the third non-single-crystal semiconductor layer is above 10 18 atoms/cm 3 , wherein the P-type impurity introduced into the second non-single-crystal semiconductor layer is boron and has a concentration in the range of 2×10 15 to 2×10 17 atoms/cm 3 at one end of the second layer adjoining the third non-single-crystal semiconductor layer, and wherein the ratio of the concentration of the P-type impurity in the second non-single-crystal semiconductor layer at the other end thereof adjoining the first non-single-crystal semiconductor to the P-type impurity concentration in the second layer at the said one end thereof is in the range of 1/10 to 1/100.

Claim 21

A photoelectric conversion device according to claim 14, wherein the third non-single-crystal semiconductor layer has a larger energy band gap than does the second non-single-crystal semiconductor layer.

Claim 22

A photoelectric conversion device according to claim 15, wherein the third non-single-crystal semiconductor layer is formed of Si x C 1-x (where 0<x<1), and wherein the second non-single-crystal semiconductor layer is formed of silicon.