US5846320A
Expired / Lapsed
US
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Method for forming crystal and crystal article obtained by said method
Assignee: Canon Inc
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Filing: 1995-06-06
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Granted: 1998-12-08
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Expires: 2015-06-06
Abstract
Abstract A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (SNDS) with small nucleation density and a nucleation surface (SNDL) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (NDL) than the nucleation density (NDS) of said non-nucleation surface (SNDS), thereby growing a single crystal from said single nucleus.
Inventors
- 👤 Jinsho Matsuyama
- 👤 Yutaka Hirai
- 👤 Masao Ueki
- 👤 Akira Sakai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 21:37
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/04; C23C16/22; C23C16/24; C23C16/44; C23C16/448; C23C16/452; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/272; H10P14/276; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; F; F04; F04C; F04C2240/00; F04C2240/60; F04C2240/603
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
232 words
A method for producing a crystal article having a crystal portion constituted of a plurality of single-crystals formed on a substrate having a plurality of nucleation surfaces, said nucleation surfaces constituting a first amorphous material which are exposed from a non-nucleation surface, said non-nucleation surface being a second amorphous material; said single-crystals corresponding in shape to each of said exposed nucleation surfaces and overgrown on said non-nucleation surface, which method comprises: (a) providing a substrate having said nucleation surfaces comprising said first amorphous material; (b) forming a layer having said non-nucleation surface comprising said second amorphous material on said nucleation surfaces of said substrate; (c) partly removing said layer to expose said nucleation surfaces; said exposed nucleation surfaces being arranged in a plural number as regularly sectionalized within said non-nucleation surface; the nucleation density of the material constituting said single-crystal on said exposed nucleation surface being sufficiently larger than the nucleation density of the material constituting said single-crystal on said non-nucleation surface so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and each of said exposed nucleation surfaces having an area of 10 mm or less in diameter so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and (d) applying vapor deposition to form said nucleus and to grow said single-crystal from said nucleus.
Claim 2
Independent Claim
232 words
A method for producing a crystal article having a crystal portion constituted of a plurality of single-crystals formed on a substrate having a plurality of nucleation surfaces, said nucleation surfaces constituting a first amorphous material which are exposed from a non-nucleation surface, said non-nucleation surface being a second amorphous material; said single-crystals corresponding in shape to each of said exposed nucleation surfaces and overgrown on said non-nucleation surface, which method comprises: (a) providing a substrate having said nucleation surfaces comprising said first amorphous material; (b) forming a layer having said non-nucleation surface comprising said second amorphous material on said nucleation surfaces of said substrate; (c) partly removing said layer to expose said nucleation surfaces; said exposed nucleation surfaces being arranged in a plural number as regularly sectionalized within said non-nucleation surface; the nucleation density of the material constituting said single-crystal on said exposed nucleation surface being sufficiently larger than the nucleation density of the material constituting said single-crystal on said non-nucleation surface so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and each of said exposed nucleation surfaces having an area of 10 mm or less in diameter so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and (d) applying vapor deposition to form said nucleus and to grow said single-crystal from said nucleus.
Claim 3
Dependent Claim
27 words
A method for producing a crystal article according to claim 1, wherein said nucleation surfaces are constituted by a material different in composition from said non-nucleation surface.
Claim 4
Dependent Claim
12 words
A method according to claim 1, wherein said single-crystals are silicon single-crystals.
Claim 5
Dependent Claim
16 words
A method according to claim 1, wherein said non-nucleation surface is constituted of an amorphous oxide.
Claim 6
Dependent Claim
15 words
A method according to claim 1, wherein said nucleation surfaces are constituted of silicon nitride.
Claim 7
Dependent Claim
18 words
A method according to claim 1, wherein said nucleation surfaces are constituted of Si 3 N 4 .
Claim 8
Dependent Claim
25 words
A method according to claim 1, wherein said nucleation surfaces are constituted of silicon nitride, and said non-nucleation surface is constituted of amorphous silicon oxide.
Claim 9
Dependent Claim
15 words
A method according to claim 1, wherein said nucleation surfaces are constituted of tantalum oxide.
Claim 10
Dependent Claim
15 words
A method according to claim 1, wherein said nucleation surfaces are constituted of silicon oxynitride.
Claim 11
Dependent Claim
16 words
A method according to claim 1, wherein said non-nucleation surface is constituted of SiO 2 .
Claim 12
Dependent Claim
22 words
A method according to claim 2, wherein said single-crystals are silicon single-crystals and said non-nucleation surface is constituted of SiO 2 .
Claim 13
Independent Claim
234 words
A method for producing a crystal article having a crystal portion constituted of a plurality of single-crystals formed on a substrate having a plurality of nucleation surfaces of a metallic material exposed from a non-nucleation surface of a second material, said single-crystals corresponding in shape to said nucleation surfaces and overgrown on said non-nucleation surface, which method comprises: (a) providing a substrate having said nucleation surfaces comprising said metallic material; (b) forming a layer having said non-nucleation surface comprising said second material on said nucleation surfaces of said substrate; (c) partly removing said layer to expose said nucleation surfaces; said exposed nucleation surfaces being arranged in a plural number as regularly sectionalized within said non-nucleation surface; the nucleation density of the material constituting said single-crystal on said exposed nucleation surface being sufficiently larger than the nucleation density of the material constituting said single-crystal on said non-nucleation surface so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and each of said exposed nucleation surfaces having an area of 10 mm or less in diameter so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and (d) applying vapor deposition to form said nucleus and to grow said single-crystal from said nucleus; wherein said single-crystal is comprised of a material other than the material constituting said exposed nucleation surface.
Claim 14
Independent Claim
234 words
A method for producing a crystal article having a crystal portion constituted of a plurality of single-crystals formed on a substrate having a plurality of nucleation surfaces of a metallic material exposed from a non-nucleation surface of a second material, said single-crystals corresponding in shape to said nucleation surfaces and overgrown on said non-nucleation surface, which method comprises: (a) providing a substrate having said nucleation surfaces comprising said metallic material; (b) forming a layer having said non-nucleation surface comprising said second material on said nucleation surfaces of said substrate; (c) partly removing said layer to expose said nucleation surfaces; said exposed nucleation surfaces being arranged in a plural number as regularly sectionalized within said non-nucleation surface; the nucleation density of the material constituting said single-crystal on said exposed nucleation surface being sufficiently larger than the nucleation density of the material constituting said single-crystal on said non-nucleation surface so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and each of said exposed nucleation surfaces having an area of 10 mm or less in diameter so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and (d) applying vapor deposition to form said nucleus and to grow said single-crystal from said nucleus; wherein said single-crystal is comprised of a material other than the material constituting said exposed nucleation surface.
Claim 15
Dependent Claim
19 words
A method according to claim 12, wherein said single-crystals are constituted of a material selected from diamond and tungsten.
Claim 16
Dependent Claim
22 words
A method according to claim 12, wherein said single-crystals are diamond single-crystals and said non-nucleation surface is constituted of Fe or Co.
Claim 17
Dependent Claim
27 words
A method according to claim 12, wherein said single-crystals are tungsten single-crystals and said non-nucleation surface is constituted of a glass primarily composed of SiO 2 .
Claim 18
Dependent Claim
16 words
A method according to claim 15, wherein said non-nucleation surface is constituted of SiO 2 .
Claim 19
Dependent Claim
22 words
A method according to claim 12, wherein said single-crystals are tungsten single-crystals and said non-nucleation surface is constituted of amorphous silicon oxide.
Claim 20
Dependent Claim
30 words
A method according to claim 12, wherein said single-crystals are tungsten single-crystals and said nucleation surfaces are constituted of a material selected from WSi 2 , and PtSi and Al.
Claim 21
Dependent Claim
32 words
A method according to claim 12, wherein said single-crystals are diamond single-crystals and said nucleation surfaces are constituted of a material selected from Cu, W, Ta, Mo, Au, Ti, Al and Ni.
Claim 22
Independent Claim
227 words
A method for producing a crystal article having a crystal portion constituted of a plurality of single-crystals formed on a substrate having a plurality of nucleation surfaces of a first amorphous material exposed from a non-nucleation surface of a second amorphous material, said single-crystals corresponding in shape to each of said nucleation surfaces and overgrown on said non-nucleation surface, which method comprises: (a) providing a substrate having said nucleation surfaces comprising said first amorphous material and formed by ion implantation; (b) forming a layer having said non-nucleation surface comprising said second amorphous material on said nucleation surfaces of said substrate; (c) partly removing said layer to expose said nucleation surfaces; said exposed nucleation surfaces being arranged in a plural number as regularly sectionalized within said surface; the nucleation density of the material constituting said single-crystal on said exposed nucleation surface being sufficiently larger than the nucleation density of the material constituting said single-crystal on said non-nucleation surface so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and each of said exposed nucleation surfaces having an area of 10 mm or less in diameter so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and (d) applying vapor deposition to form said nucleus and to grow said single-crystal from said nucleus.
Claim 23
Independent Claim
227 words
A method for producing a crystal article having a crystal portion constituted of a plurality of single-crystals formed on a substrate having a plurality of nucleation surfaces of a first amorphous material exposed from a non-nucleation surface of a second amorphous material, said single-crystals corresponding in shape to each of said nucleation surfaces and overgrown on said non-nucleation surface, which method comprises: (a) providing a substrate having said nucleation surfaces comprising said first amorphous material and formed by ion implantation; (b) forming a layer having said non-nucleation surface comprising said second amorphous material on said nucleation surfaces of said substrate; (c) partly removing said layer to expose said nucleation surfaces; said exposed nucleation surfaces being arranged in a plural number as regularly sectionalized within said surface; the nucleation density of the material constituting said single-crystal on said exposed nucleation surface being sufficiently larger than the nucleation density of the material constituting said single-crystal on said non-nucleation surface so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and each of said exposed nucleation surfaces having an area of 10 mm or less in diameter so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface; and (d) applying vapor deposition to form said nucleus and to grow said single-crystal from said nucleus.
Claim 24
Dependent Claim
19 words
A method according to claim 20, wherein said single-crystals are constituted of a material selected from silicon and diamond.
Claim 25
Dependent Claim
42 words
A method according to claim 20, wherein said single-crystals are silicon single-crystals and said nucleation surfaces are formed by ion implantation of a material selected from Si, N, P, B, F, Ar, He, C, As, Ga and Ge into SiO 2 .
Claim 26
Dependent Claim
41 words
A method according to claim 20, wherein said single-crystals are diamond single-crystals and said nucleation surfaces are formed by ion implantation of a material selected from Si, Ge, Cu, W, Ta, Mo, Au, Ti, Al and Ni into Fe or Ni.
Claim 27
Dependent Claim
20 words
A method according to claim 1, 12 or 20, wherein growing said crystal is conducted according to the CVD method.
Claim 28
Dependent Claim
33 words
A method according to claim 1, 12 or 20, wherein the single-crystals grown from the respective nucleation surfaces are permitted to grow to such a size that they conduct between adjacent nucleation surfaces.
References Cited (Backward Citations)
US3346414A
Cited
US3493431A
Cited
US3620833A
Cited
US3580732A
Cited
US3892608A
Cited
JPS5550636A
Cited
US4402771A
Cited
US4239788A
Cited
JPS5624925A
Cited
US4670086A
Cited
US4637127A
Cited
US4490208A
Cited
JPS58116739A
Cited
JPS58120590A
Cited
US4462847A
Cited
US4473598A
Cited
JPS5969495A
Cited
JPS59169918A
Cited
US4522662A
Cited
JPS6086096A
Cited
EP0180751A2
Cited
US4671970A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-12-07 | 2002-06-08 | 2002-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-12-07 | 2006-06-08 | 2006-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-12-07 | 2010-06-08 | 2010-12-08 | $7700.00 | Window Closed / Lapsed |