Selective growth of silicon

Abstract

Abstract PURPOSE:To obtain an Si growth layer of which the grains of Si are fine only on the SiN film and the boundary face of growth-nongrowth is flat when the Si growth layer is made to grow on a substrate coexisting an SiN film with an SiO2 film by a method wherein the temperature of growth and the quantity of Si source to be contained in the carrier gas are specified. CONSTITUTION:An SiO2 film 2 and an SiN film 3 are stacked and adhered on an Si substrate 1, and an appointed part of the film 3 is removed by etching to expose the film 2 at this point. The substrate 1 is arranged in a growth system, and a polycrystalline Si layer 4 is made to grow on the substrate 1 using hydrogen as the carrier gas and dichlorosilane as the Si source. At this time, when the temprature of the substrate 1 is kept at 800-900 deg.C and the quantity of dichlorosilane to be contained in hydrogen is kept at 0.05-0.10mol%, the polycrystalline Si layer 4 grows only on the film 3. By this way, as the grains of crystal in the growth layer 4 is fine and the surface becomes flat, the control of characteristic of the device using this growth layer becomes very easy.

Inventors

• 👤 Masao Kawamura
• 👤 Hiroji Saida
• 👤 Akira Sato
• 👤 Masahiko Kogirima

Bibliographic Details