Formation of silicon-single crystal film

Abstract

Abstract PURPOSE:To obtain a large amount of silicon single crystal film in a short time and in small number of stages by depositing fine silicon single crystals from a silicon-metal eutectic alloy on an amorphous substrate so as to arrange it in one orientation using these as seed crystals, and forming a silicon-single crystal film on the surface of the substrate. CONSTITUTION:A quartz glass substrate 1 is washed, a periodical structure having a linear grating configuration is formed by a photoresist 2, and protrusions 3 are provided on the substrate. A metal e.g. gold which makes an eutectic crystal with silicon to the substrate 1 is vapor-deposited, and the resist 2 is removed to form the periodical structure 4 of gold. After the substrate 1 is heated to the prescribed temp., silicon is vapor-deposited to react with gold, and an Si-Au alloy is formed. Gold is removed by iodine, and amorphous silicon between the periodical structures 4 is also removed to obtain single crystals 5 arranged in one orientation. Next, silicon is deposited by a CVD apparatus and silicon single crystals 6 are grown around silicon single crystals 5 used as seed crystals to form an even thin film 7 by carrying out the CVD treatment furthermore.

Inventors

• 👤 Hidefumi Mori
• 👤 森　英史
• 👤 Yasuhiro Takasu
• 👤 高須　保弘

Bibliographic Details